High On-Current 2D nFET of 390 μA/μm at VDS = 1V using Monolayer CVD MoS2 without Intentional Doping

Chou, Ang‐Sheng; Shen, Pin-Chun; Cheng, Chao-Ching; Lu, Li‐Syuan; Chueh, Wei-Chen; Li, Mingyang; Pitner, Gregory; Chang, Wen-Hao; Wu, Chih‐I; Kong, Jing; Li, Lain‐Jong; Wong, H.-S. Philip

doi:10.1109/vlsitechnology18217.2020.9265040

Cited by 23 publications

(17 citation statements)

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“…For a benchmarking of TMD FETs' ON-state performance, Fig. 7(a) and (b) summarizes selected "good" results of R C and I ON as a function of V OV for various TMD-based n-FETs [6]- [8], [35], [45]- [49]. We present in these figures a WS 2 FET employing the double-gated structure with L G ∼ 40 nm, showing I ON > 600 (μA/μm) normalized to footprint at scaled V OV of 2 V. Detailed comparison of transfer and output characteristics for this same device using the single-and double-gate control are shown in Fig.…”

Section: B On-state Performancesmentioning

confidence: 99%

Thickness-Dependent Study of High- Performance WS₂-FETs With Ultrascaled Channel Lengths

Pang

Appenzeller

et al. 2021

IEEE Trans. Electron Devices

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Ultrascaled WS 2 field-effect transistors (FETs) fabricated on exfoliated multilayer channels with excellent ON-state and OFF-state performance are reported. Recorded high ON-state current (I ON ) and ultralow contact resistance (R C ) were achieved in a double-gated FET at a scaled overdrive voltage (V OV = V GS − V TH ), reaching >600 (µA/µm) normalized to footprint at V DS = 1 V and V OV = 2 V with a R C ∼ 500 ( × μm). We report statistics of more than 50 FETs with varying channel lengths, showing excellent OFF-state behavior with small threshold voltage (V TH ) variations, near-ideal subthreshold slope (SS), and small drain-induced barrier lowering (DIBL). Various channel thicknesses (T CH ) ranging from 2.1 to 7 nm were carefully evaluated in terms of short channel effects (SCEs) and ON-state current, and a WS 2 body thickness of 2.1 nm (three layers, the thinnest in our statistics) shows the best performance in both ON-state and OFF-state. Index Termsn-field-effect transistor (FET), scaled effective oxide thickness (EOT), scaled L G , WS 2 . I. INTRODUCTIONC ONTINUED scaling of complementary metal-oxidesemiconductor (CMOS) has been the main driving force for improving the computational performance, allowing rapid development in the field of high-performance computing (HPC) and cloud computing. Silicon has been serving as the main channel material for CMOS for more than five decades and is currently approaching the 5 nm technology node [2]. However, CMOS is expected to encounter several challenges in further technology nodes, and it will become particularly difficult to maintain good electrostatic control in field-effect transistors (FETs).

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Section: B On-state Performancesmentioning

confidence: 99%

Thickness-Dependent Study of High- Performance WS₂-FETs With Ultrascaled Channel Lengths

Pang

Appenzeller

et al. 2021

IEEE Trans. Electron Devices

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“…Irrespective of the process difficulties, the DC and AC performances of 2D-FET are compared with the silicon field-effect transistors. The performances are analyzed using validated compact models (S2DSb) for the three most advanced MoS2 transistors [13][14][15]. A 10nm channel length based MoS2 transistor [13] is fitted to the S2DSb model, as shown in Fig.…”

Section: Resultsmentioning

confidence: 99%

“…However, many researchers have fabricated transistors using other non-silicon materials, This paragraph of the first footnote will contain the date on which you submitted your paper for review. It will also contain s Uttam Kumar Das and M. M. Hussain * are with the mmh Lab, Department of Electrical and Computer Engineering (ECE), King Abdullah University of such as carbon-nanotube (CNT-FET) [8][9][10][11][12] and twodimensional materials (2D-FET) [13][14][15][16], and the device performances are explained such that these emerging channel materials are better alternatives than silicon. Therefore, in this work, the recently published 14nm and 10nm node [3][4] silicon transistor from Intel corporation are studied along with the sub-20nm channel length-based CNT-FETs [8][9][10], as well as the sub-100nm channel length based 2D-FETs [13][14][15].…”

Section: Introductionmentioning

confidence: 99%

“…It will also contain s Uttam Kumar Das and M. M. Hussain * are with the mmh Lab, Department of Electrical and Computer Engineering (ECE), King Abdullah University of such as carbon-nanotube (CNT-FET) [8][9][10][11][12] and twodimensional materials (2D-FET) [13][14][15][16], and the device performances are explained such that these emerging channel materials are better alternatives than silicon. Therefore, in this work, the recently published 14nm and 10nm node [3][4] silicon transistor from Intel corporation are studied along with the sub-20nm channel length-based CNT-FETs [8][9][10], as well as the sub-100nm channel length based 2D-FETs [13][14][15]. Although the most recently developed 5nm node silicon FinFET from TSMC is a qualified technology, there was limited data to extract the device parameters [17].…”

Section: Introductionmentioning

confidence: 99%

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Benchmarking Silicon FinFET With the Carbon Nanotube and 2D-FETs for Advanced Node CMOS Logic Application

Das

Hussain

2021

IEEE Trans. Electron Devices

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In this paper, the performances of Silicon FinFET is compared to carbon-nanotube (CNT-FET) and two-dimensional field-effect transistors (2D-FET) for the upcoming node CMOS logic application. Based on the experimental results, a 17-stage ring oscillator circuit is implemented using the compact models to analyze the stage delay and energy-delay performances. A tightly positioned 20nm and 10nm channel length-based CNT-FET enhances ION but also increases the leakage currents significantly. Due to poor electrostatic control and increased gate leakage, the CNT-FET and 2D-FET are providing lowered ION and a limited AC performance. Thus, targeting an off-state current, the FinFET delivers more than three times higher drive current, as well as 5times better energy-delay performances in comparison to the CNT-FET and 2D-FET. On the other hand, scaled organic-FETs are yet far away to compare with FinFET technology. Hence, the silicon-based (3D) field-effect transistors are leading in all the devices (2D, 1D, and 0D) for scaling next-generation CMOS technology.

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“…We present a benchmark chart (Fig 5d) to compare the performance of our devices against flake and CVD 2D material FETs in literature 34,35,36,37,38,39,40,41,42,43 . We choose the peak of transconductance (gm,max) measured at VDS = 1 V and SSmin as the two metrics for comparison, similar to conventional Si transistors.…”

Section: Benchmark Projection and Conclusionmentioning

confidence: 99%

Impact of Device Scaling on the Electrical Properties of MoS2 Field-effect Transistors

Arutchelvan¹,

Smets²,

Verreck³

et al. 2021

Preprint

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Two-dimensional semiconducting materials are considered as ideal candidates for ultimate device scaling. However, a systematic study on the performance and variability impact of scaling the different device dimensions is still lacking. Here we investigate the scaling behavior across 1300 devices fabricated on large-area grown MoS2 material with channel length down to 30 nm, contact length down to 13 nm and capacitive effective oxide thickness (CET) down to 1.9 nm. These devices show best-in-class performance with transconductance of 185 μS/μm and a minimum subthreshold swing (SS) of 86 mV/dec. We find that scaling the top-contact length has no impact on the contact resistance and electrostatics of three monolayers MoS2 transistors, because edge injection is dominant. Further, we identify that SS degradation occurs at short channel length and can be mitigated by reducing the CET and lowering the Schottky barrier height. Finally, using a power performance area (PPA) analysis, we present a roadmap of material improvements to make 2D devices competitive with Silicon gate-all-around devices.

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High On-Current 2D nFET of 390 μA/μm at VDS = 1V using Monolayer CVD MoS2 without Intentional Doping

Cited by 23 publications

References 0 publications

Thickness-Dependent Study of High- Performance WS₂-FETs With Ultrascaled Channel Lengths

Thickness-Dependent Study of High- Performance WS₂-FETs With Ultrascaled Channel Lengths

Benchmarking Silicon FinFET With the Carbon Nanotube and 2D-FETs for Advanced Node CMOS Logic Application

Impact of Device Scaling on the Electrical Properties of MoS2 Field-effect Transistors

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High On-Current 2D nFET of 390 μA/μm at VDS = 1V using Monolayer CVD MoS2 without Intentional Doping

Cited by 23 publications

References 0 publications

Thickness-Dependent Study of High- Performance WS2-FETs With Ultrascaled Channel Lengths

Thickness-Dependent Study of High- Performance WS2-FETs With Ultrascaled Channel Lengths

Benchmarking Silicon FinFET With the Carbon Nanotube and 2D-FETs for Advanced Node CMOS Logic Application

Impact of Device Scaling on the Electrical Properties of MoS2&nbsp;Field-effect Transistors

Contact Info

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Thickness-Dependent Study of High- Performance WS₂-FETs With Ultrascaled Channel Lengths

Thickness-Dependent Study of High- Performance WS₂-FETs With Ultrascaled Channel Lengths

Impact of Device Scaling on the Electrical Properties of MoS2 Field-effect Transistors