2024
DOI: 10.1039/d3ma01142a
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High on/off ratio SiO2-based memristors for neuromorphic computing: understanding the switching mechanisms through theoretical and electrochemical aspects

Fei Qin,
Yuxuan Zhang,
Ziqi Guo
et al.

Abstract: Memristors have emerged as promising elements for brain-inspired computing applications, yet the understanding of their switching mechanisms, particularly in valence change memristors, remains a topic of ongoing debate. We report...

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Cited by 3 publications
(1 citation statement)
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“…The materials include organics [22], perovskites [23][24][25][26], polymers [27], binary oxides [28], and other 2D materials [29,30]. Some of the widely used materials of memristors for neuromorphic computation are TiO x [31], TaO x [32], HfO x [33], SiO x [34,35] and IGZO [36]. Integrating two-dimensional (2D) materials into electronic circuits holds the promise of moving beyond the limitations of traditional metal-oxide-based technologies, especially in light of the extensive research on using memristors in neuromorphic circuits [37].…”
Section: Methodsmentioning
confidence: 99%
“…The materials include organics [22], perovskites [23][24][25][26], polymers [27], binary oxides [28], and other 2D materials [29,30]. Some of the widely used materials of memristors for neuromorphic computation are TiO x [31], TaO x [32], HfO x [33], SiO x [34,35] and IGZO [36]. Integrating two-dimensional (2D) materials into electronic circuits holds the promise of moving beyond the limitations of traditional metal-oxide-based technologies, especially in light of the extensive research on using memristors in neuromorphic circuits [37].…”
Section: Methodsmentioning
confidence: 99%