High On/Off Ratio Tunnel Transistor Formed by CVD-grown Bilayer WSe &lt;sub&gt;2&lt;/sub&gt;/MoSe &lt;sub&gt;2&lt;/sub&gt; van der Waals Heterostructures

Irisawa, T.; Okada, Naoya; Chang, Wen Hsin; Okada, Minoru; Mori, Toshihiko; Endo, Takahiko; Miyata, Yasuo

doi:10.7567/ssdm.2019.d-1-02

Cited by 1 publication

(1 citation statement)

References 0 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Drastic reduction of contact resistance thanks to the change of electron injection configuration, from edge to area injection, resulted in much higher performances compared with the reference monolayer devices. Following the previous conference paper, 28) we have revised the discussion about device operation mechanisms and added some data of the monolayer devices to demonstrate an advantage of bilayer device in terms of contact resistance. An optical microscope image and the details of CVD growth experiment have been also added to show the wide range picture of grown samples and to make clear the growth conditions.…”

Section: Introductionmentioning

confidence: 99%

CVD grown bilayer WSe₂/MoSe₂ heterostructures for high performance tunnel transistors

Irisawa

Okada

Chang

et al. 2020

Jpn. J. Appl. Phys.

View full text Add to dashboard Cite

Bilayer WSe2/MoSe2 van der Waals heterostructures have been directly grown on SiO2/Si substrates by 2-step chemical vapor deposition method. Bilayer nature with well aligned in-plane crystal orientation has been confirmed by Raman and transmission electron microscopy characterizations. Back gate transistors having bilayer WSe2/MoSe2 in the source side have been fabricated and high on/off ratio larger than 106 have been obtained. Gate-induced modulation of electron direct tunneling from source metal to the bottom MoSe2 layer and band to band tunneling from the valence band of WSe2 to the conduction band of MoSe2 can be an operation mechanism. Thanks to the drastic reduction of contact resistance due to the change of electron injection configuration, from edge to area injection at the source electrode, much higher on/off ratio with steeper switching was obtained in the WSe2/MoSe2 bilayer device as compared with the monolayer MoSe2 and WSe2 devices.

show abstract

Section: Introductionmentioning

confidence: 99%

CVD grown bilayer WSe₂/MoSe₂ heterostructures for high performance tunnel transistors

Irisawa

Okada

Chang

et al. 2020

Jpn. J. Appl. Phys.

View full text Add to dashboard Cite

show abstract

High On/Off Ratio Tunnel Transistor Formed by CVD-grown Bilayer WSe <sub>2</sub>/MoSe <sub>2</sub> van der Waals Heterostructures

Cited by 1 publication

References 0 publications

CVD grown bilayer WSe₂/MoSe₂ heterostructures for high performance tunnel transistors

CVD grown bilayer WSe₂/MoSe₂ heterostructures for high performance tunnel transistors

Contact Info

Product

Resources

About

High On/Off Ratio Tunnel Transistor Formed by CVD-grown Bilayer WSe <sub>2</sub>/MoSe <sub>2</sub> van der Waals Heterostructures

Cited by 1 publication

References 0 publications

CVD grown bilayer WSe2/MoSe2 heterostructures for high performance tunnel transistors

CVD grown bilayer WSe2/MoSe2 heterostructures for high performance tunnel transistors

Contact Info

Product

Resources

About

CVD grown bilayer WSe₂/MoSe₂ heterostructures for high performance tunnel transistors

CVD grown bilayer WSe₂/MoSe₂ heterostructures for high performance tunnel transistors