High open circuit voltage c-Si/a-Si:H heterojunction solar cells: Influence of hydrogen plasma treatment studied by spectroscopic ellipsometry

Kanneboina, Venkanna; Madaka, Ramakrishna; Agarwal, Pramod

doi:10.1016/j.solener.2018.03.068

Cited by 21 publications

(6 citation statements)

References 47 publications

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“…As shown in Figure 3A, compared with different types of heterojunction PV devices previously reported (Si [Green et al, 2019;Kanneboina et al, 2018;Masuko et al, 2014;Yoshikawa et al, 2017], GaAs [Beattie et al, 2018;Gruginskie et al, 2018;Ho et al, 2018;Outes et al, 2018], perovskite [Jaysankar et al, 2019;Jeon et as-fabricated device attains the highest open-circuit voltage so far. To explore the mechanism of the ultra-high open-circuit voltage generated in this device, the carrier distribution and transport characteristics of the heterojunction in different states need to be analyzed profoundly.…”

Section: Ideal Model For Open-circuit Voltagementioning

confidence: 86%

Ultra-high Photovoltage (2.45 V) Forming in Graphene Heterojunction via Quasi-Fermi Level Splitting Enhanced Effect

et al. 2020

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Owing to the fast response speed and low energy consumption, photovoltaic vacuum-ultraviolet (VUV) photodetectors show prominent advantages in the field of space science, high-energy physics, and electronics industry. For photovoltaic devices, it is imperative to boost their open-circuit voltage, which is the most direct indicator to measure the photoelectric conversion capability. In this report, a quasi-Fermi level splitting enhanced effect under illumination, benefiting from the variable Fermi level of graphene, is proposed to significantly increase the potential difference up to 2.45 V between the two ends of p-Gr/i-AlN/n-SiC heterojunction photovoltaic device. In addition, the highest external quantum efficiency of 56.1% (under the VUV irradiation of 172 nm) at 0 V bias and the ultra-fast photoresponse of 45 ns further demonstrate the superiority of high-open-circuit-voltage devices. The proposed device design strategy and the adopted effect provide a referential way for the construction of various photovoltaic devices.

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Section: Ideal Model For Open-circuit Voltagementioning

confidence: 86%

Ultra-high Photovoltage (2.45 V) Forming in Graphene Heterojunction via Quasi-Fermi Level Splitting Enhanced Effect

et al. 2020

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“…We deposited an a-Si:H passivation layer on the poly-Si layer. An a-Si:H passivation layer has been used to achieve a high conversion efficiency in hetero junction solar cells [5,6]. However, the use of an a-Si:H passivation layer in poly-Si TFTs has so far not been reported.…”

Section: Introductionmentioning

confidence: 99%

Improvement of Electrical Performance in P-Channel LTPS Thin-Film Transistor with a-Si:H Surface Passivation

et al. 2019

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We report the effects of surface passivation by depositing a hydrogenated amorphous silicon (a-Si:H) layer on the electrical characteristics of low temperature polycrystalline silicon thin film transistors (LTPS TFTs). The intrinsic a-Si:H layer was optimized by hydrogen dilution and its structural and electrical characteristics were investigated. The a-Si:H layer in the transition region between a-Si:H and µc-Si:H resulted in superior device characteristics. Using a-Si:H passivation layer, the field-effect mobility of the LTPS TFT was increased by 78.4% compared with conventional LTPS TFT. Moreover, the leakage current measured at VGS of 5 V was suppressed because the defect sites at the poly-Si grain boundaries were well passivated. Our passivation layer, which allows thorough control of the crystallinity and passivation-quality, should be considered as a candidate for high performance LTPS TFTs.

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“…We tried depositing an a-Si:H passivation layer on the poly-Si layer. An a-Si:H passivation layer has been used to achieve a high conversion efficiency in hetero junction solar cells [5][6].…”

Section: Ofmentioning

confidence: 99%

Improvement of Electrical Performance in P-Channel LTPS Thin-Film Transistor with a-Si:H Surface Passivation

Jang¹,

Pham²,

Lee³

et al. 2018

Preprint

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We report the effects of surface passivation by depositing a hydrogenated amorphous silicon (a-Si:H) layer on the electrical characteristics of low temperature polycrystalline silicon thin film transistors (LTPS TFTs). The a-Si:H layer was optimized by hydrogen dilution and its structural and electrical characteristics were investigated. The a-Si:H layer in the transition region between a-Si:H and µc-Si:H resulted in superior device characteristics. Using an a-Si:H passivation layer, the field-effect mobility of the LTPS TFT was increased by 78.4% compared with a conventional LTPS TFT. Moreover, the leakage current measured at a VGS of 5 V was suppressed because the defect sites at the poly-Si grain boundaries were well passivated. Our passivation layer, which allows thorough control of the crystallinity and passivation-quality, should be considered a candidate for high performance LTPS TFTs.

show abstract

High open circuit voltage c-Si/a-Si:H heterojunction solar cells: Influence of hydrogen plasma treatment studied by spectroscopic ellipsometry

Cited by 21 publications

References 47 publications

Ultra-high Photovoltage (2.45 V) Forming in Graphene Heterojunction via Quasi-Fermi Level Splitting Enhanced Effect

Ultra-high Photovoltage (2.45 V) Forming in Graphene Heterojunction via Quasi-Fermi Level Splitting Enhanced Effect

Improvement of Electrical Performance in P-Channel LTPS Thin-Film Transistor with a-Si:H Surface Passivation

Improvement of Electrical Performance in P-Channel LTPS Thin-Film Transistor with a-Si:H Surface Passivation

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