High-operating temperature MWIR nBn HgCdTe detector grown by MOCVD

Kopytko, M.; Kębłowski, A.; Gawron, W.; Madejczyk, P.; Kowalewski, Andrzej; Jóźwikowski, K.

doi:10.2478/s11772-013-0101-y

Cited by 38 publications

(18 citation statements)

References 11 publications

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“…The HgCdTe nBn devices operating in MWIR range were presented by Itsuno et al [47][48][49] and Kopytko et al [50]. The HgCdTe ternary alloy is close to ideal infrared material system.…”

Section: Hgcdte Barrier Detectorsmentioning

confidence: 99%

“…Absence of a depletion region offers a way for materials with relatively poor SR lifetimes, such as all III−V compounds, to overcome the disadvantage of large depletion dark currents. Its practical application has been demonstrated in InAs [4,7,16], InAsSb [8,10,13,17,18] InAs/GaSb T2SLs [5,9,14,15] and recently, also in HgCdTe ternary alloy [19,20]. The main requirement which must be met to construct the barrier detector structure is "zero" band offset in a pro− per band depending on carrier type which is to be blocked.…”

Section: Materials Considerations For Barrier Infrared Detectorsmentioning

confidence: 99%

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Barrier infrared detectors

Martyniuk

Kopytko

Rogalski

2014

Opto-Electronics Review

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109

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In 1959, Lawson and co-workers publication triggered development of variable band gap Hg1−xCdxTe (HgCdTe) alloys providing an unprecedented degree of freedom in infrared detector design. Over the five decades, this material system has successfully fought off major challenges from different material systems, but despite that it has more competitors today than ever before. It is interesting however, that none of these competitors can compete in terms of fundamental properties. They may promise to be more manufacturable, but never to provide higher performance or, with the exception of thermal detectors, to operate at higher temperatures.In the last two decades a several new concepts of photodetectors to improve their performance have been proposed including trapping detectors, barrier detectors, unipolar barrier photodiodes, and multistage detectors. This paper describes the present status of infrared barrier detectors. It is especially addressed to the group of III-V compounds including type-II superlattice materials, although HgCdTe barrier detectors are also included. It seems to be clear that certain of these solutions have merged as a real competitions of HgCdTe photodetectors.

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“…The HgCdTe nBn devices operating in MWIR range were presented by Itsuno et al [47][48][49] and Kopytko et al [50]. The HgCdTe ternary alloy is close to ideal infrared material system.…”

Section: Hgcdte Barrier Detectorsmentioning

confidence: 99%

Section: Materials Considerations For Barrier Infrared Detectorsmentioning

confidence: 99%

Barrier infrared detectors

Martyniuk

Kopytko

Rogalski

2014

Opto-Electronics Review

Self Cite

109

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“…The first iteration of HgCdTe barrier detectors was grown with undoped or p-type doped barrier with n + BnN + architecture [10]. Highly doped n-type cap contact layer was deposited to provide a low resistance contact between the barrier and anode metallization.…”

Section: First Iteration Of Mocvd Grown Hgcdte Barrier Detectorsmentioning

confidence: 99%

MOCVD grown HgCdTe p⁺BnN⁺barrier detector for MWIR HOT operation

et al. 2015

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The work reports on mid-wavelength infrared HgCdTe barrier detectors with a zero valence band offset, grown by metal organic chemical vapour deposition on GaAs substrates. The experiments indicate the influence of the barrier on electrical and optical performances of the p + BnN + device. The devices exhibit very low dark current densities in the range of (2÷3)×10 -3 A/cm 2 at 300 K and a high current responsivity of about 2A/W in the wide range of reverse bias voltage. The estimated thermal activation energy of about 0.33 eV is close to the full Hg 0.64 Cd 0.36 Te bandgap, what indicates diffusion limited dark currents.

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“…12 The responsivity increases when the reverse bias is applied. 13 In HgCdTe material, proper p-type doping of the barrier reduces the valence band-offset and increases the offset in the conduction band. [14][15][16][17] The device with the barrier only in the conduction band is similar to that proposed in Ref.…”

Section: Introductionmentioning

confidence: 99%

Status of HgCdTe Barrier Infrared Detectors Grown by MOCVD in Military University of Technology

Kopytko

Jóźwikowski

Martyniuk

et al. 2016

Journal of Elec Materi

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In this paper we present the status of HgCdTe barrier detectors with an emphasis on technological progress in metalorganic chemical vapor deposition (MOCVD) growth achieved recently at the Institute of Applied Physics, Military University of Technology. It is shown that MOCVD technology is an excellent tool for HgCdTe barrier architecture growth with a wide range of composition, donor/acceptor doping, and without post-grown annealing. The device concept of a specific barrier bandgap architecture integrated with Auger-suppression is as a good solution for high-operating temperature infrared detectors. Analyzed devices show a high performance comparable with the state-of-the-art of HgCdTe photodiodes. Dark current densities are close to the values given by ''Rule 07'' and detectivities of non-immersed detectors are close to the value marked for HgCdTe photodiodes. Experimental data of longwavelength infrared detector structures were confirmed by numerical simulations obtained by a commercially available software APSYS platform. A detailed analysis applied to explain dark current plots was made, taking into account Shockley-Read-Hall, Auger, and tunneling currents.

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High-operating temperature MWIR nBn HgCdTe detector grown by MOCVD

Cited by 38 publications

References 11 publications

Barrier infrared detectors

Barrier infrared detectors

MOCVD grown HgCdTe p⁺BnN⁺barrier detector for MWIR HOT operation

Status of HgCdTe Barrier Infrared Detectors Grown by MOCVD in Military University of Technology

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High-operating temperature MWIR nBn HgCdTe detector grown by MOCVD

Cited by 38 publications

References 11 publications

Barrier infrared detectors

Barrier infrared detectors

MOCVD grown HgCdTe p+BnN+barrier detector for MWIR HOT operation

Status of HgCdTe Barrier Infrared Detectors Grown by MOCVD in Military University of Technology

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Product

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About

MOCVD grown HgCdTe p⁺BnN⁺barrier detector for MWIR HOT operation