High-operating-temperature MWIR photodetector based on a InAs/GaSb superlattice grown by MOCVD

Hao, Xiujun; Teng, Yuping; Zhu, He; Liu, Jiafeng; Zhu, Hong; Huai, Yunlong; Li, Meng; Chen, Baile; Huang, Yong; Yang, Hui

doi:10.1088/1674-4926/43/1/012303

J. Semicond.

2022

DOI: 10.1088/1674-4926/43/1/012303

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High-operating-temperature MWIR photodetector based on a InAs/GaSb superlattice grown by MOCVD

Xiujun Hao¹,

Yuping Teng²,

He Zhu³

et al.

Abstract: We demonstrate a high-operating-temperature (HOT) mid-wavelength InAs/GaSb superlattice heterojunction infrared photodetector grown by metal–organic chemical vapor deposition. High crystalline quality and the near-zero lattice mismatch of a InAs/GaSb superlattice on an InAs substrate were evidenced by high-resolution X-ray diffraction. At a bias voltage of –0.1 V and an operating temperature of 200 K, the device exhibited a 50% cutoff wavelength of ~ 4.9 μm, a dark current density of 0.012 A/cm2, and a peak sp… Show more

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Cited by 4 publications

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Recent Advances of Photodetection Technology Based on Main Group III–V Semiconductors

Ai,

Qin,

Xue

et al. 2024

Adv Funct Materials

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The rapid advancement of main group III–V nanomaterials endows photodetectors (PDs) with enhanced performance. At present, various III–V nanomaterials are systematically investigated, whereof III–V semiconductors have attracted a successively increased attention that calls for a comprehensive summary which also can define the state‐of‐art for their further development. Herein, this work systematically introduces and discusses key aspects of the field. First, the advanced strategies for the preparation of III–V semiconductor materials and the device structures of the subsequent PDs based on these materials, pristine and doped, are addressed. The focus is then turned to their performance under the irradiation of various wavelengths, separately summarizing and comparing the photodetection properties under infrared, UV and visible light. Finally, challenges and future perspectives of III–V semiconductor‐based PDs are highlighted. This review enlightens the development of III–V semiconductor‐based PDs, and their extended applications for optoelectronic devices in general.

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Recent Advances of Photodetection Technology Based on Main Group III–V Semiconductors

Ai,

Qin,

Xue

et al. 2024

Adv Funct Materials

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Design and Development of Metasurface Materials for Enhancing Photodetector Properties

Guan,

Xu,

Lou

et al. 2024

Advanced Science

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Recently, metasurface‐based photodetectors (metaphotodetectors) have been developed and applied in various fields. Metasurfaces are artificial materials with unique properties that have emerged over the past decade, and photodetectors are powerful tools used to quantify incident electromagnetic wave information by measuring changes in the conductivity of irradiated materials. Through an efficient microstructural design, metasurfaces can effectively regulate numerous characteristics of electromagnetic waves and have demonstrated unique advantages in various fields, including holographic projection, stealth, biological image enhancement, biological sensing, and energy absorption applications. Photodetectors play a crucial role in military and civilian applications; therefore, efficient photodetectors are essential for optical communications, imaging technology, and spectral analysis. Metaphotodetectors have considerably improved sensitivity and noise‐equivalent power and miniaturization over conventional photodetectors. This review summarizes the advantages of metaphotodetectors based on five aspects. Furthermore, the applications of metaphotodetectors in various fields including military and civil applications, are systematically discussed. It highlights the potential future applications and developmental trends of metasurfaces in metaphotodetectors, provides systematic guidance for their development, and establishes metasurfaces as a promising technology.

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Ferroelectric Polarization Enhanced Optoelectronic Synaptic Response of a CuInP₂S₆ Transistor Structure

Shang,

Liu,

Wang

et al. 2024

ACS Nano

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Neuromorphic computing can simulate brain function and is a pivotal element in next-generation computing, providing a potential solution to the limitations brought by the von Neumann bottleneck. Optoelectronic synaptic devices are highly promising tools for simulating biomimetic nervous systems. In this study, we developed an optoelectronic neuromorphic device with a transistor structure constructed using ferroelectric CuInP 2 S 6 . Essential synaptic behaviors in this device are observed in response to light and electrical stimuli. The optoferroelectric coupling is revealed, and the highly tunable gate modulation of the charge carrier is realized in a single device. On this basis, the light adaptation of the biological eyes and smarter Pavlovian dogs was implemented successfully and enhanced by ferroelectric polarization. The gate voltage application promotes the migration of additional Cu + ions in the in-plane direction, thus enhancing the synaptic performance of electrical stimulation. Meanwhile, the processing ability of convolutional kernel noise images in ferroelectric devices has been achieved. Our results offer the important observation and application of ferroelectric polarization-enhanced synaptic properties of a transistor structure and have great potential in promoting the development of two-dimensional van der Waals materials and devices.

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High-operating-temperature MWIR photodetector based on a InAs/GaSb superlattice grown by MOCVD

Cited by 4 publications

References 17 publications

Recent Advances of Photodetection Technology Based on Main Group III–V Semiconductors

Recent Advances of Photodetection Technology Based on Main Group III–V Semiconductors

Design and Development of Metasurface Materials for Enhancing Photodetector Properties

Ferroelectric Polarization Enhanced Optoelectronic Synaptic Response of a CuInP₂S₆ Transistor Structure

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High-operating-temperature MWIR photodetector based on a InAs/GaSb superlattice grown by MOCVD

Cited by 4 publications

References 17 publications

Recent Advances of Photodetection Technology Based on Main Group III–V Semiconductors

Recent Advances of Photodetection Technology Based on Main Group III–V Semiconductors

Design and Development of Metasurface Materials for Enhancing Photodetector Properties

Ferroelectric Polarization Enhanced Optoelectronic Synaptic Response of a CuInP2S6 Transistor Structure

Contact Info

Product

Resources

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Ferroelectric Polarization Enhanced Optoelectronic Synaptic Response of a CuInP₂S₆ Transistor Structure