High optical responsivity of InAlAs-InGaAs metamorphic high-electron mobility transistor on GaAs substrate with composite channels

Choi, Changsoon; Kang, Hyo-Soon; Choi, Woo-Young; Kim, H.-J.; Choi, Won Jun; Kim, D.-H.; Jang, Kwangchul; Seo, Kwang Seok

doi:10.1109/lpt.2003.811339

Cited by 51 publications

(21 citation statements)

References 7 publications

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“…While under the illumination at 1550 nm, as the MoS 2 layer is transparent to NIR light, the photogenerated electrons and holes only appear in the InGaAs channel. The measured transfer curve (the red curve) in Figure b exhibits a leftward shift, which indicates a positive photoresponse in a traditional InGaAs‐based HEMT . Such a photoelectric characteristic has also been shown in the I d – V d output curves in Figure c.…”

supporting

confidence: 53%

Integration of MoS₂ with InAlAs/InGaAs Heterojunction for Dual Color Detection in Both Visible and Near‐Infrared Bands

Deng

Bao

Zhu

et al. 2019

Advanced Optical Materials

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However, such a conventional technique is being challenged by the demand for system miniaturization. So far, several methods have been proposed to extend the response spectra of a single photodetector. One method involves heterogeneously integrating photodetectors based on materials with different bandgaps (such as Si and III−V compounds) on the same substrate by molecular beam epitaxy (MBE) or metal organic chemical vapor deposition (MOCVD) to introduce extra absorption layers. [7][8][9][10] Unfortunately, owing to lattice mismatches, significant leakage current frequently occurs in the dark, and the manufacturing is complicated and expensive. Another approach is to integrate a metasurface into a semiconductor by local plasmonic resonances. [11][12][13][14][15] However, such detectors suffer from extremely low quantum efficiency due to energy loss in the metallic metasurface.In recent years, 2D materials based on van der Waals heterojunctions have been extensively investigated as potential candidates for next-generation optoelectronic devices. [16][17][18] Different from conventional bulk semiconductors with covalent bonds, the lack of dangling bonds at the surface of 2D materials enables the realization of interfaces with fewer defects and lattice mismatches than conventional semiconductor devices, [19] offering us an excellent opportunity to integrate 2D materials with conventional At present, dual-channel or even multi-channel recording is a developing trend in the field of photodetection, which is widely applied in environment protection, security, and space science and technology. This paper proposes a novel MoS 2 /InAlAs/InGaAs n-i-n heterojunction phototransistor by integrating multi-layered MoS 2 with InGaAs-based high electron mobility transistors (InGaAs-HEMTs). Due to the internal photocurrent amplification in the InGaAs channels with a narrow energy bandgap of 0.79 eV, this device exhibits high photoresponsivity (R) of over 8 × 10 5 A W -1 under near-infrared illumination of 1550 nm at 500 pW. Furthermore, with the combination of the photoconductance effect in the vertical MoS 2 /InAlAs/ InGaAs n-i-n heterojunction and the photogating effect in the lateral phototransistor, this device possesses a unique characteristic under visible illumination that its photoresponsivity can be tuned by the top gate electrode from 6 × 10 5 A W -1 to -4 × 10 5 A W -1 by gate voltage. This may lead to a new application as an optically controlled electronic inverter, which needs further study in depth. This MoS 2 /InAlAs/InGaAs phototransistor builds up a new bridge between 2D materials and conventional ternary compounded semiconductor devices.The trend of photoelectric detection is advancing toward multiband detection, miniaturization, and high integration within one substrate. To accomplish multichannel detection to broadband electromagnetic radiation, independent photodetectors based on different semiconductors-such as GaN [1,2] for ultraviolet (UV), Si [3,4] for visible, and InGaAs [5,6] for near-infrared (NIR) band...

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confidence: 53%

Integration of MoS₂ with InAlAs/InGaAs Heterojunction for Dual Color Detection in Both Visible and Near‐Infrared Bands

Deng

Bao

Zhu

et al. 2019

Advanced Optical Materials

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“…In the PV effect, photogenerated holes flow to the drain electrode, while negative charges accumulate under the source electrode, reducing the barrier height for hole injection and, thus, the contact resistance. 24 This leads to a positive shift in V th . At 680 nm, there is a sublinear dependence of R ph on P opt , i.e., R ph / P À0:9 , which likely comes from enhanced singlet-singlet exciton annihilation, due to higher density of photogenerated excitons at increasing optical power [ Fig.…”

Section: -mentioning

confidence: 99%

Ultrasensitive organic phototransistors with multispectral response based on thin-film/single-crystal bilayer structures

Pinto

Gouveia

Neves

et al. 2015

Applied Physics Letters

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We report on highly efficient organic phototransistors (OPTs) based on thin-film/single-crystal planar bilayer junctions between 5,6,11,12-tetraphenyltetracene (rubrene) and [6,6]-phenyl-C61-butyric acid methyl ester (PC61BM). The OPTs show good field-effect characteristics in the dark, with high hole-mobility (4–5 cm2 V−1 s−1), low-contact resistance (20 kΩ cm), and low-operating voltage (≤5 V). Excellent sensing capabilities allow for light detection in the 400–750 nm range, with photocurrent/dark current ratio as high as 4 × 104, responsivity on the order of 20 AW−1 at 27 μW cm−2, and an external quantum efficiency of 52 000%. Photocurrent generation is attributed to enhanced electron and hole transfer at the interface between rubrene and PC61BM, and fast response times are observed as a consequence of the high-mobility of the interfaces. The optoelectronic properties exhibited in these OPTs outperform those typically provided by a-Si based devices, enabling future applications where multifunctionality in a single-device is sought.

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“…The accumulated negative carriers can effectively reduce the injection barrier of holes at the source electrode. The lowered injection barrier induced by light irradiation results in an effective decrease in contact resistance and in a positive shift of V Th , and thereby in a significant increase in I d 45–47. Moreover, photogenerated electrons can also be trapped at the semiconductor/dielectric interface by electron‐capturing moieties, such as hydroxyl groups on SiO 2 dielectric layer or other sources.…”

Section: Operation Mechanismsmentioning

confidence: 99%

“…Moreover, photogenerated electrons can also be trapped at the semiconductor/dielectric interface by electron‐capturing moieties, such as hydroxyl groups on SiO 2 dielectric layer or other sources. The photocurrent caused by the photovoltaic effect can be expressed as Equation (1):45, 46 where η is the photogeneration quantum efficiency, P opt the incident optical power, I pd the dark current for minority charges, hc /λ the photon energy, g m the transconductance, ΔV Th the threshold voltage shift, and A a proportionality parameter 48…”

Section: Operation Mechanismsmentioning

confidence: 99%

Organic Light Detectors: Photodiodes and Phototransistors

et al. 2013

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While organic electronics is mostly dominated by light-emitting diodes, photovoltaic cells and transistors, optoelectronics properties peculiar to organic semiconductors make them interesting candidates for the development of innovative and disruptive applications also in the field of light signal detection. In fact, organic-based photoactive media combine effective light absorption in the region of the spectrum from ultraviolet to near-infrared with good photogeneration yield and low-temperature processability over large areas and on virtually every substrate, which might enable innovative optoelectronic systems to be targeted for instance in the field of imaging, optical communications or biomedical sensing. In this review, after a brief resume of photogeneration basics and of devices operation mechanisms, we offer a broad overview of recent progress in the field, focusing on photodiodes and phototransistors. As to the former device category, very interesting values for figures of merit such as photoconversion efficiency, speed and minimum detectable signal level have been attained, and even though the simultaneous optimization of all these relevant parameters is demonstrated in a limited number of papers, real applications are within reach for this technology, as it is testified by the increasing number of realizations going beyond the single-device level and tackling more complex optoelectronic systems. As to phototransistors, a more recent subject of study in the framework of organic electronics, despite a broad distribution in the reported performances, best photoresponsivities outperform amorphous silicon-based devices. This suggests that organic phototransistors have a large potential to be used in a variety of optoelectronic peculiar applications, such as a photo-sensor, opto-isolator, image sensor, optically controlled phase shifter, and opto-electronic switch and memory.

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High optical responsivity of InAlAs-InGaAs metamorphic high-electron mobility transistor on GaAs substrate with composite channels

Cited by 51 publications

References 7 publications

Integration of MoS₂ with InAlAs/InGaAs Heterojunction for Dual Color Detection in Both Visible and Near‐Infrared Bands

Integration of MoS₂ with InAlAs/InGaAs Heterojunction for Dual Color Detection in Both Visible and Near‐Infrared Bands

Ultrasensitive organic phototransistors with multispectral response based on thin-film/single-crystal bilayer structures

Organic Light Detectors: Photodiodes and Phototransistors

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High optical responsivity of InAlAs-InGaAs metamorphic high-electron mobility transistor on GaAs substrate with composite channels

Cited by 51 publications

References 7 publications

Integration of MoS2 with InAlAs/InGaAs Heterojunction for Dual Color Detection in Both Visible and Near‐Infrared Bands

Integration of MoS2 with InAlAs/InGaAs Heterojunction for Dual Color Detection in Both Visible and Near‐Infrared Bands

Ultrasensitive organic phototransistors with multispectral response based on thin-film/single-crystal bilayer structures

Organic Light Detectors: Photodiodes and Phototransistors

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Product

Resources

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Integration of MoS₂ with InAlAs/InGaAs Heterojunction for Dual Color Detection in Both Visible and Near‐Infrared Bands

Integration of MoS₂ with InAlAs/InGaAs Heterojunction for Dual Color Detection in Both Visible and Near‐Infrared Bands