High-output-voltage, high speed, high efficiencyuni-travelling-carrier waveguide photodiode

Muramoto, Y.; Kato, Kazutoshi; Mitsuhara, Manabu; Nakajima, O.; Matsuoka, Yutaka; Shimizu, Nobutaka; Ishibashi, Tadao

doi:10.1049/el:19980054

Cited by 39 publications

(14 citation statements)

References 5 publications

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“…Since a thin photoabsorption layer of less than 0.3 m is essential for UTC operation [65], low efficiency is inevitable for the vertically illuminated UTC-PD. To improve the efficiency, a UTC structure was introduced into the WGPD [67]. When a double-core multimode waveguide and a mushroom-mesa structures were applied, the UTC-WGPD showed a pulse response with a peak photocurrent of 26 mA (1.3 V at 50-load), a bandwidth of 55 GHz, and an efficiency of 32% [67].…”

Section: Carrier-transport Design Challengesmentioning

confidence: 99%

“…We designed an UTC-WGPD structure aimed at a highoutput current together with large bandwidth and high efficiency [67]. A UTC structure consisting of a 0.1-m-thick p-type InGaAs photoabsorption layer and a 0.2-m-thick undoped InGaAsP depletion layer was applied to a WGPD, as shown in Fig.…”

Section: B Utc-wgpdmentioning

confidence: 99%

“…Fig. 17 shows the measured saturation currents of the mushroom-mesa UTC-WGPD (open circles) [67], the buried UTC-WGPD (closed circles) [70], and the mushroom-mesa WGPD (squares, as a reference) as functions of the net bias voltage that results from the subtraction of the voltage drop due to series resistance. These three devices have the same junction area of 1.…”

Section: B Utc-wgpdmentioning

confidence: 99%

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Ultrawide-band/high-frequency photodetectors

Kato

1999

IEEE Trans. Microwave Theory Techn.

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323

127

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The two main trends in the progress of ultrawideband/high-frequency photodetectors (PD's), improving the bandwidth-efficiency product and obtaining a high saturation current, are reviewed. With respect to achieving large bandwidthefficiency, the limiting factors and potentials of edge-coupled (waveguide, waveguide-fed, traveling-wave, periodic-travelingwave), resonant-cavity, and refracting-facet photodiodes, as well as the avalanche photodiode are discussed. Regarding high-saturation current, the author estimated how much the space-charge effect limits the saturation current and two ways to reduce the space-charge effect are outlined. One way is to distribute the photocarriers along the edge-coupled PD's and the other is to increase the carrier velocity using a uni-traveling carrier structure. The waveguide-photodiode-based technologies that we have developed are also presented; namely the design and fabrication of a 100-GHz waveguide photodiode (WGPD), uni-traveling carrier WGPD, 60-GHz packaging, and a 20-GHz large-core WGPD for the planar lightwave circuit integration. A 50-Gb/s receiver opto-electronic integrated circuit technology based on the WGPD is also presented.

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Section: Carrier-transport Design Challengesmentioning

confidence: 99%

Section: B Utc-wgpdmentioning

confidence: 99%

Section: B Utc-wgpdmentioning

confidence: 99%

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Ultrawide-band/high-frequency photodetectors

Kato

1999

IEEE Trans. Microwave Theory Techn.

Self Cite

323

127

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“…The use of dual-depletion region (Jun et al, 2006) is also effective in this modification to keep the high operation speed. Another way to improve the responsivity with the high operation speed maintained is to employ an external structure to guide the input light to the absorption layer at different angle, such as waveguide structure (Muramoto et al, 1998), evanescently coupled structure (Achouche et al, 2004), velocity-matched distributed structure (Hirota et al, 2001), refracting facet structure (Fukano et al, 1999), and total reflection structure (Ito et al, 2000c).…”

Section: Basic Characteristicsmentioning

confidence: 99%

High-Power RF Uni-Traveling-Carrier Photodiodes (UTC-PDs) and Their Applications

Nagatsuma¹,

Itô²

2011

Advances in Photodiodes

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“…It also contributes to the ease of packaging, and is effective especially for the tolerant optical alignment. Muramoto et al introduced the WG structure in the UTC-PD and the measured efficiency reached 50 % with a bandwidth of 55 GHz [41].…”

Section: Structure Designmentioning

confidence: 99%

High‐power RF photodiodes and their applications

Nagatsuma

Itô

Ishibashi

2009

Laser & Photonics Reviews

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155

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There has been an increasing interest in photonic generation of RF signals in the millimeter-wave (30 GHz ∼ 300 GHz) and/or terahertz-wave (0.1 THz ∼ 10 THz) regions, and photodiodes play a key role in it. This paper reviews recent progress in the high-power RF photodiodes such as UniTraveling-Carrier-Photodiodes (UTC-PDs), which operate at these frequencies. Several approaches to increasing both the bandwidth and output power of photodiodes are discussed, and promising applications to broadband wireless communications and spectroscopic sensing are described.Photodiode chip is bonded to the substrate with the antenna. This is a symbolic figure of RF photonics in this article. Antenna Photodiode Light RF signal

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High-output-voltage, high speed, high efficiencyuni-travelling-carrier waveguide photodiode

Cited by 39 publications

References 5 publications

Ultrawide-band/high-frequency photodetectors

Ultrawide-band/high-frequency photodetectors

High-Power RF Uni-Traveling-Carrier Photodiodes (UTC-PDs) and Their Applications

High‐power RF photodiodes and their applications

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