High-Overtone Bulk Acoustic Resonator

Baron, T.; Lebrasseur, Éric; Bassignot, Florent; Martin, Vicki; Ballandras, S.

doi:10.5772/56175

Cited by 9 publications

(5 citation statements)

References 33 publications

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“…The two planar boundaries of the device form a cavity for the bulk acoustic wave. To achieve a high quality factor, a high degree of parallelism for the two planar boundaries is stringently required to suppresses the acoustic diffraction loss . Even with perfectly parallel boundaries, a planar cavity lacks lateral confinement .…”

mentioning

confidence: 99%

Engineering Electron–Phonon Coupling of Quantum Defects to a Semiconfocal Acoustic Resonator

et al. 2019

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Diamond-based microelectromechanical systems (MEMS) enable direct coupling between the quantum states of nitrogen-vacancy (NV) centers and the phonon modes of a mechanical resonator. One example, diamond high-overtone bulk acoustic resonators (HBARs), feature an integrated piezoelectric transducer and support high-quality factor resonance modes into the GHz frequency range. The acoustic modes allow mechanical manipulation of deeply embedded NV centers with long spin and orbital coherence times. Unfortunately, the spin-phonon coupling rate is limited by the large resonator size, > 100 µm, and thus strongly-coupled NV electron-phonon interactions remain out of reach in current diamond BAR devices. Here, we report the design and fabrication of a semi-confocal HBAR (SCHBAR) device on diamond (silicon carbide) with 1 arXiv:1906.06309v1 [cond-mat.mes-hall] 14 Jun 2019 f · Q > 10 12 (> 10 13 ). The semi-confocal geometry confines the phonon mode laterally below 10 µm. This drastic reduction in modal volume enhances defect center electronphonon coupling. For the native NV centers inside the diamond device, we demonstrate mechanically driven spin transitions and show a high strain-driving efficiency with a Rabi frequency of (2π)2.19(14) MHz/V p , which is comparable to a typical microwave antenna at the same microwave power.Defect-based qubits are attractive platforms for solid state quantum technologies. 1 The leading examples are the nitrogen-vacancy (NV) 2 center and the silicon-vacancy (SiV) 3 center in diamond, and the divacancy center 4 and the silicon vacancy center (V Si ) 5 in silicon carbide (SiC). Hybrid quantum systems based on these defect qubits are particularly interesting because they interface the qubit spin to photons or phonons and thus potentially enable the transport of quantum information. For sensing applications, they offer unconventional modalities of quantum control which is a resource for extending the coherence time and thus sensitivity. Coupling spins to mechanical motion could also enable new quantum-enhanced sensors of motion, such as inertial sensing. 6,7 Although solid state spin-photon entanglement has been demonstrated in recent years 8 and has been used to build quantum networks, 9 defect-based spin-mechanical systems have yet to operate at the single phonon quantum level because they are limited by weak electronphonon coupling, g, in existing devices. Considering g ∝ 1/V , where V is the modal volume, one approach to strengthening the coupling is to engineer small mode volume mechanical resonators with high quality factors. Ultimately, defect-based spin-mechanical systems may enable new sensing applications and control of phonon states at the quantum level. 10Defect-based spin-mechanical systems can be classified into two categories: 1) micro-beam resonator systems 11-13 and 2) micro-electromechanical systems (MEMS) 14-17 with integrated thin-film piezoelectric transducers. While the first category minimizes the resonator fabrication to a single material, i.e., diamond, SiC, etc., high...

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confidence: 99%

Engineering Electron–Phonon Coupling of Quantum Defects to a Semiconfocal Acoustic Resonator

et al. 2019

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“…It is reflected by the backside of the Ti substrate. This configuration is therefore similar to H-BAR [22]. The time domain response of one device, with the different peaks due to the different waves, is shown in figure 6, corresponding to a 250-320 MHz frequency span.…”

Section: Impedance Analysis Of the Structure In The Frequency And Tim...mentioning

confidence: 91%

Temperature and strain SAW/BAW sensors on metallic substrates with RFID capability

Mengue¹,

Paulmier²,

Hage-Ali³

et al. 2023

Smart Mater. Struct.

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Surface acoustic wave (SAW) strain sensors require an adhesive - typically a glue - for the mounting on the part under measurement. This comes with strain-transfer, reproducibility and aging issues. In this paper, we propose a novel glue-less solution where the SAW sensor is directly fabricated onto the surface of interest, here a metallic substrate. Here, we study the layered structure ZnO/Ti numerically and experimentally, with ZnO as the piezoelectric layer and titanium as the substrate. In this structure, both BAW (Bulk Acoustic Waves) and SAW can propagate, and we used both of them to monitor temperature variations up to 300°C and strain levels up to 1800 με. Moreover, reflective delay line (R-DL) designs were used, to provide the future users with RFID functionalities. In order to overcome the limitations due to the relatively low electromechanical coupling coefficient of ZnO/Ti, a specific R-DL layout with connected inter digital transducers (IDTs) was used. The obtained-experimental results confirm that the proposed glue-less R-DL structure is a promising solution for the independent evaluation of temperature and strain, with identification.

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“…Unlike in Film Bulk Acoustic Resonator (FBAR) and Solidly Mounted Resonator (SMR) which only odd overtones exist, both odd and even overtones are exited, as both satisfy electrical and mechanical boundary conditions. For more details, the reader can consult [4].…”

Section: Hbar Designmentioning

confidence: 99%

“…Our approach is to use Bulk Acoustic Waves (BAW) generated by a piezoelectric thin film. Many works have been achieved exploiting thin piezoelectric films for developing bulk acoustic devices as Film Bulk acoustic Resonator (FBAR) [2] or High-overtone Bulk Acoustic Resonator (HBAR) [3] [4]. This work presents the later approach with HBAR devices.…”

Section: Introductionmentioning

confidence: 96%

High-Q and low TCF HBAR based on LiTaO<inf>3</inf> substrate

Baron

Martin

Chretien

et al. 2014

2014 IEEE International Frequency Control Symposium (FCS)

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This work presents a comparison between three different High-overtone Bulk Acoustic Resonators based on different materials. Furthermore, the goal of this work is to realize a High-overtone Bulk Acoustic Resonators presented a temperature coefficient of frequency less than 10 ppm over a wide range of temperature around a turnover temperature, and a Q.f product higher than 5×10 13 Hz. After a discussion about the choice of materials to achieve such resonator and the description of our microfabrication, three High-overtone Bulk Acoustic Resonators based on a Lithium of Niobate, Quartz, Lithium of Tantalate, AlN and Sapphire materials are compared in term of the temperature coefficient of frequency, the Q.f product and the phase noise. The new HBAR exhibits a Q.f product around 3.7×10 13 Hz, a turnover around 55°C with a parabolic shape and a temperature coefficient of frequency around +/-4 ppm/K.

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High-Overtone Bulk Acoustic Resonator

Cited by 9 publications

References 33 publications

Engineering Electron–Phonon Coupling of Quantum Defects to a Semiconfocal Acoustic Resonator

Engineering Electron–Phonon Coupling of Quantum Defects to a Semiconfocal Acoustic Resonator

Temperature and strain SAW/BAW sensors on metallic substrates with RFID capability

High-Q and low TCF HBAR based on LiTaO<inf>3</inf> substrate

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