High PAE pseudomorphic InGaAs/AlGaAs HEMT X-band high power amplifiers

Chen, Y.C.; Wu, C.S.; Pao, C.K.; Cole, Michael; Bardai, Z.; Hou, L.D.; Midford, T.A.; Cisco, T.C.

doi:10.1109/gaas.1995.529011

Cited by 12 publications

(3 citation statements)

References 4 publications

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“…Therefore, the lateral device structure must be optimized to achieve the best device performance. Although a number of successful designs have already been reported [3][4][5], detailed investigations concerning the relation between recess width and output power are required. 2 with the field strength in a single recessed device.…”

Section: Introductionmentioning

confidence: 99%

High Performance Double Recessed Al0,2Ga0,8As/In0,25Ga0,75As PHEMTs for Microwave Power Applications

Marsetz

Hulsmann

Kleindienst

et al. 1997

1997 27th European Microwave Conference

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Double recessed T-gate Alo.2GaO.8As/InO25GaO75As pseudomorphic HEMTs with 0.3 pm gate length and different upper recess widths have been processed and analyzed. Systematic investigations concerning the correlation between drain ledge, breakdown voltage and power performance have been carried out. An optimum upper recess width has been identified which yields to a high drain-source breakdown voltage of about 24 V. A state of the art saturated output power density of 1080 mW/mm at 2 GHz is demonstrated under CW-mode of operation. DC and power measurements are performed on wafers which are not thinned. INTRODUCTIONFor power applications, e.g. in mobile or satellite communication systems, FETs with high gain, high power added efficiency (PAE) and high output power density are required. To achieve a higher output power density it

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Section: Introductionmentioning

confidence: 99%

High Performance Double Recessed Al0,2Ga0,8As/In0,25Ga0,75As PHEMTs for Microwave Power Applications

Marsetz

Hulsmann

Kleindienst

et al. 1997

1997 27th European Microwave Conference

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“…Since the power PHEMT's are typically used in the power transceiver (TR) modules and biased at high Vds, it is essential to establish a comfortable reliability ground in this class of devices. For example, in order to deliver high output power and retain system stability, power PHEMT's with gate length of 0.3 pm are biased at Vds=7V-lOV, Ids=1/3Idss [6]. At this biasing condition, devices are subjected to a severe hot carrier stress owing to the high impact-ionization effects [7].…”

Section: Introductionmentioning

confidence: 99%

Hot carrier reliability in high-power PHEMTs

Chou

et al.

GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium. 18th Annual Technical Digest 1996

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PECVD nitride passivated high-power PHEMT's were used to study their hot carrier reliability. The typical hot carrier induced device degradation characteristics are often observed in devices with a less-than-ideal double gate recess and material layers design. With additional drain engineering work to optimize device power performance, the hot carrier effects can be alleviated drastically. However, depending on nitride deposition processes and nitride quality, Schottky diode degradation (a barrier height increase) was also observed during hot carrier stress. This study facilitates a comprehensive characterization of the hot carrier induced effects in power PHEMT's and recommends an alternative to improve the hot carrier reliability.

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“…While HBTs and HFETs have demonstrated excellent PAE results [2]- [6], MESFETs are interesting due to their relative simplicity and potentially lower cost [7]. 0-7803-5049-9/98/$10.00 0 1998 IEEE The GO1 MESFETs used in this work were fabricated using a technology developed for high efficiency applications [SI.…”

Section: Device Fabrication I Introductionmentioning

confidence: 99%

Record power-added efficiency using GaAs on insulator MESFET technology

Jenkins

Kehias²,

Parikh³

et al.

GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 20th Annual. Technical Digest 1998 (Cat. No.98CH36260)

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Record power-added efficiency (PAE) of 89% was obtained at 8 GHz with a gain of 9.6 dB using GaAs on insulator (GOI) MESFETs, which were operated using a 3-V supply. When the voltage was increased to 4 V, the peak PAE was 93% at 210 mW/mm with 9.2-dB gain. The ideal current-voltage characteristics with practically zero leakage current and large transconductance near pinch-off yielded PAE values approaching the theoretical limits of over-driven operation.This work reports the latest state-of-the-art PAE obtainable using MESFETs produced with GaAs on insulator (GOI) technology. Record PAE is achieved by these X-Band devices at low supply voltages due to the improved charge control of the insulating buffer layer of aluminum oxide and a lowtemperature (LT) AlGaAs as compared to conventional MESIFET structures. These devices provide power gain and minimal leakage while being overdriven with rf input power and biased at low dc power. DEVICE FABRICATION I. INTRODUCTIONHigh efficiency components are vital elements of solid-state amplifiers for wireless applications. While portable applications require reduced supply voltages to minimize weight and size, enhanced efficiency is required to ensure long battery life. !In addition to the portable wireless applications, limited prime power in saiellite applications requires superior power-added efficiency (PAE) [ 11. For example, multiple beam spots can be produced using phased arrays to improk e the communications system's performance. However, large numbers of devices with poor PAE could easily overwhelm the available dc power in satellile communications platforms.Many technologies are being investigated for applications requiring high efficiency. While HBTs and HFETs have demonstrated excellent PAE results [2]-[6], MESFETs are interesting due to their relative simplicity and potentially lower cost [7]. 0-7803-5049-9/98/$10.00 0 1998 IEEE The GO1 MESFETs used in this work were fabricated using a technology developed for high efficiency applications [SI. An A1203 insulating buffer layer, located below the conventional MESFET channel, was obtained by the wet oxidation of 500-8( of A I O .~~G~.~~A S on a 3000-A layer of LTAIGaAs. The LT-PJGaAs layer below the insulating buffer layer served as a getter for the arsenic released during the Oxidation and minimized charge depletion resulting from the oxidation process [9]. The active channel was lOOO-i% of GaAs doped at 4x10'' cm". The device structure included an undoped GaAs cap layer to protect the active device during the oxidation process. This sacrificial cap layer was removed after mesa isolation and lateral oxidation of the buried AlGaAs buffer. This protective cap was also used to fabricate control MESFETs on the same wafer by completely blocking the lateral oxidation in those cases. 259To ensure microwave performance, the gates were patterned by e-beam lithography and recessed using an etch stop layer. The gate lithography was done at HRL. Devices were fabricated with 0.35-pm T-gates of various widths, which yielded a cuto...

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High PAE pseudomorphic InGaAs/AlGaAs HEMT X-band high power amplifiers

Cited by 12 publications

References 4 publications

High Performance Double Recessed Al0,2Ga0,8As/In0,25Ga0,75As PHEMTs for Microwave Power Applications

High Performance Double Recessed Al0,2Ga0,8As/In0,25Ga0,75As PHEMTs for Microwave Power Applications

Hot carrier reliability in high-power PHEMTs

Record power-added efficiency using GaAs on insulator MESFET technology

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