High-peak-power low-threshold AlGaAs/GaAs stripe laser diodes on Si substrates grown by migration-enhanced molecular beam epitaxy

We first report on migration-enhanced molecular beam epitaxial (MEMBE) growth and characterization of the GaAs layer on Si substrates (GaAs/Si). Excellent surface morphology GaAs layers were successfully grown on (100)Si substrates misoriented 4° toward the [110] direction. The MEMBE growth method is described, and material properties are compared with those of normal two-step MBE-grown or in situ annealed layers. Micrographs of cross-section view transmission electron microscopy (TEM) and scanning surface electron microscopy (SEM) of MEMBE-grown GaAs/Si showed dislocation densities of 1×107 cm−2, over ten times lower than those of normal two-step MBE-grown or in situ annealed layers. AlGaAs/GaAs double heterostructures have been successfully grown on MEMBE GaAs/Si by both metalorganic chemical vapor deposition and liquid phase epitaxy.

show abstract

Growth and characterization of GaAs layers on Si substrates by migration-enhanced molecular beam epitaxy

Kim¹,

Liu

Radhakrishnan

et al. 1988

Applied Physics Letters

View full text Add to dashboard Cite

show abstract

Improvement in the crystalline quality of heteroepitaxial GaAs on Si films grown by modulated molecular beam epitaxy

Lee

Liu

Wang

et al. 1989

Applied Physics Letters

View full text Add to dashboard Cite

GaAs films were grown on Si substrates by a two-step method in which a thin buffer layer was first deposited using a modulated molecular beam epitaxy (MBE) technique followed by a thick layer grown by conventional molecular beam epitaxy. The film quality was evaluated using 77 K photoluminescence (PL) and double-crystal x-ray rocking curves. It was found that GaAs films grown in this way have a superior crystalline quality compared to the films prepared by normal two-step MBE. To investigate the nucleation of this buffer layer, thin GaAs layers (150 Å) were grown on Si substrates and examined by plan-view and cross-sectional transmission electron microscope. A thin, two-dimensional nucleation pattern was found in this sample, in clear contrast to the three-dimensional nucleation islands found in samples grown by conventional MBE. This showed conclusively that modulated beam molecular beam epitaxy resulted in a more uniform and two-dimensional nucleation during the initial stage of the growth as speculated earlier and is believed to be the reason for the improvement of the crystalline quality of the overgrown layer.

show abstract

High-power low-threshold graded-index separate confinement heterostructure AlGaAs single quantum well lasers on Si substrates

Kim

Lang

Radhakrishnan

et al. 1989

Applied Physics Letters

View full text Add to dashboard Cite

A high-power low-threshold graded-index separate confinement heterostructure AlGaAs single quantum well laser on Si substrates has been demonstrated for the first time by a hybrid growth of migration-enhanced molecular beam epitaxy followed by metalorganic vapor phase epitaxy. The quantum well laser showed an output power of more than 400 mW per facet under pulsed conditions. A room-temperature threshold current of 300 mA was obtained with a differential quantum efficiency of 40% without facet coating. The threshold current density was 550 A/cm2 for a cavity length of 500 μm. These results show the highest peak power reported to date for low-threshold lasers on Si substrates. The full width at half maximum of the far-field pattern parallel to the junction was 6°. Threshold current densities as low as 250 A/cm2 were obtained for lasers on GaAs substrates.

show abstract

scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.

Contact Info

customersupport@researchsolutions.com

10624 S. Eastern Ave., Ste. A-614

Henderson, NV 89052, USA

This site is protected by reCAPTCHA and the Google Privacy Policy and Terms of Service apply.

Blog Terms and Conditions API Terms Privacy Policy Contact Cookie Preferences Do Not Sell or Share My Personal Information

Made with 💙 for researchers

Part of the Research Solutions Family.

High-peak-power low-threshold AlGaAs/GaAs stripe laser diodes on Si substrates grown by migration-enhanced molecular beam epitaxy

Cited by 9 publications

References 8 publications

Growth and characterization of GaAs layers on Si substrates by migration-enhanced molecular beam epitaxy

Growth and characterization of GaAs layers on Si substrates by migration-enhanced molecular beam epitaxy

Improvement in the crystalline quality of heteroepitaxial GaAs on Si films grown by modulated molecular beam epitaxy

High-power low-threshold graded-index separate confinement heterostructure AlGaAs single quantum well lasers on Si substrates

Contact Info

Product

Resources

About