2022 29th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD) 2022
DOI: 10.23919/am-fpd54920.2022.9851398
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High Performance Active-Matrix Light-Emitting Displays Enabled by Vertical Light-Emitting Transistor Technology

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“…Because the VOLET's channel length is simply the thickness of the deposited semiconductor layer, it is possible to achieve sub-micron channel length without high resolution patterning techniques. The resulting short channel length combined with the large cross-sectional area through which that current flows (figure 1) imbues the device with such a high current capability that even very low mobility semiconductors can now serve as the channel layer [61][62][63][64][65]. Note the distinction from the lateral channel TFT where the cross-section for current flow is confined to just a few nanometers above the gate dielectric interface across the width of the channel.…”
Section: The Vertical Light-emitting Transistor For Amoledmentioning
confidence: 99%
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“…Because the VOLET's channel length is simply the thickness of the deposited semiconductor layer, it is possible to achieve sub-micron channel length without high resolution patterning techniques. The resulting short channel length combined with the large cross-sectional area through which that current flows (figure 1) imbues the device with such a high current capability that even very low mobility semiconductors can now serve as the channel layer [61][62][63][64][65]. Note the distinction from the lateral channel TFT where the cross-section for current flow is confined to just a few nanometers above the gate dielectric interface across the width of the channel.…”
Section: The Vertical Light-emitting Transistor For Amoledmentioning
confidence: 99%
“…Thus, the device can be tailored to excel in many performance metrics. With the channel semiconductor and layers below it being transparent, including the CNT network source electrode which has a 98% transmittance throughout wavelengths of visible spectrum, the VOLET can readily be configured as a bottom emission device, avoiding the need for a transparent cathode and allowing for easier processing (figure 1) [64].…”
Section: The Vertical Light-emitting Transistor For Amoledmentioning
confidence: 99%
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