High‐Performance Ambipolar Diketopyrrolopyrrole‐Thieno[3,2‐<i>b</i>]thiophene Copolymer Field‐Effect Transistors with Balanced Hole and Electron Mobilities

Chen, Zhuoying; Lee, Mi Jung; Ashraf, Raja Shahid; Gu, Y.; Albert‐Seifried, Sebastian; Nielsen, Martin Meedom; Schroeder, Bob C.; Anthopoulos, Thomas D.; Heeney, Martin; McCulloch, Iain; Sirringhaus, Henning

doi:10.1002/adma.201102786

Cited by 541 publications

(458 citation statements)

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“…As different molecules are substituted into the copolymer structure, the HOMO and LUMO energy levels can shift significantly, affecting the bandgap, environmental stability, and band offsets determining the charge injection properties for various metal contacts. [2][3][4][5][6][7]11 Electronic transport, especially, is extremely sensitive to the choice of donor. The emergence of high-mobility DA polymers with strong electron and hole transport is a result of both HOMO and LUMO electron orbitals that are often well delocalized over the entire DA molecules.…”

Section: Resultsmentioning

confidence: 99%

“…[2][3][4] Specifically, the donor-acceptor (DA) approach to synthesizing polymers has led to a new generation of high-mobility ambipolar systems, a necessary precondition for many transistor, photovoltaic, and light-emitting device applications. [5][6][7][8] Recently, DA polymers based on acceptor benzobisthiadiazole (BBT) 7,9,10 and donor diketopyrrolopyrrole (DPP) [10][11][12][13][14][15] have demonstrated strong ambipolarity as well as exceptionally low optical energy badgaps as small as 0.5 eV. 11 The highest field-effect mobilities in these systems have surpassed 1 cm 2 V −1 s −1 for both electrons and holes.…”

Section: Introductionmentioning

confidence: 99%

“…11 The highest field-effect mobilities in these systems have surpassed 1 cm 2 V −1 s −1 for both electrons and holes. 5,11 Despite much recent progress, however, there remains an incomplete understanding of the fundamental nature of charge transport and dynamics, especially in DA systems that accomodate both types of carriers.…”

Section: Introductionmentioning

confidence: 99%

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Electron and hole polaron accumulation in low-bandgap ambipolar donor-acceptor polymer transistors imaged by infrared microscopy

et al. 2014

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A resurgence in the use of the donor-acceptor (DA) approach in synthesizing conjugated polymers has resulted in a family of high-mobility ambipolar systems with exceptionally narrow energy bandgaps below 1 eV. The ability to transport both electrons and holes is critical for device applications such as organic light-emitting diodes (OLEDs) and transistors (OLETs). Infrared spectroscopy offers direct access to the low-energy excitations associated with injected charge carriers. Here we use a diffraction-limited IR microscope to probe the spectroscopic signatures of electron and hole injection in the conduction channel of an organic field-effect transistor (OFET) based on an ambipolar DA polymer polydiketopyrrolopyrrole-benzobisthiadiazole (PDPPBBT). We observe distinct polaronic absorptions for both electrons and holes, and spatially map the carrier distribution from the source to drain electrodes for both unipolar and ambipolar biasing regimes. For ambipolar device configurations, we observe the spatial evolution of hole-induced to electron-induced polaron absorptions throughout the transport path. Our work provides a platform for combined transport and infrared studies of organic semiconductors on micron length scales relevant to functional devices.

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Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Electron and hole polaron accumulation in low-bandgap ambipolar donor-acceptor polymer transistors imaged by infrared microscopy

et al. 2014

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“…Different work functions were established by using plasma cleaned gold and solvent cleaned gold. Rinsing gold contacts by a solvent is known to decrease their work function from the range of À(5.0-5.5) eV for plasma cleaned gold to the range of À(4.7-4.9) eV for solvent cleaned gold [36]. The HOMO and LUMO levels of PDPPTPT were earlier determined with cyclic voltammetry to be À5.…”

Section: Transistor Characteristicsmentioning

confidence: 99%

Contactless charge carrier mobility measurement in organic field-effect transistors

Roelofs¹,

Li²,

Janssen³

et al. 2014

Organic Electronics

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a b s t r a c tWith the increasing performance of organic semiconductors, contact resistances become an almost fundamental problem, obstructing the accurate measurement of charge carrier mobilities. Here, a generally applicable method is presented to determine the true charge carrier mobility in an organic field-effect transistor (OFET). The method uses two additional finger-shaped gates that capacitively generate and probe an alternating current in the OFET channel. The time lag between drive and probe can directly be related to the mobility, as is shown experimentally and numerically. As the scheme does not require the injection or uptake of charges it is fundamentally insensitive to contact resistances. Particularly for ambipolar materials the true mobilities are found to be substantially larger than determined by conventional (direct current) schemes.

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“…We chose two high performance polymeric semiconductors, based on previous demonstrations of transistor performance and printability. [ 2,8,26 ] These were the predominantly p-type polymer diketopyrrolopyrrole-thieno[3,2 -b ]thiophene (DPPT-TT); [ 27 ] and the n-type poly([ N,N′ -bis(2-octyldodecyl)-naphthalene-1,4,5,8-bis(dicarboximide)-2,6-diyl]-alt-5,5′-(2,2′-bithiophene)) (P(NDI2OD-T2)) (structures in Figure 1 a). [ 28 ] All devices are bottom-gate bottom-contact as necessitated by our selfaligned approach.…”

mentioning

confidence: 99%

Complementary Organic Logic Gates on Plastic Formed by Self‐Aligned Transistors with Gravure and Inkjet Printed Dielectric and Semiconductors

Higgins

Muir

Dell’Erba

et al. 2016

Adv Elect Materials

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photo detectors. [ 10 ] Similarly gravure printing has been used to fabricate circuits such as: complementary ring oscillators, [ 11 ] logic gates, [ 12 ] unipolar fl ip-fl ops and half-adders. [ 13,14 ] Although previous reports have combined gravure and inkjet printing to fabricate p-type organic fi eld-effect transistors (OFETs), [ 15 ] there is a lack of direct comparative studies of the impact of each process on the electrical performance of devices. Here, we explore gravure versus inkjet printing of semiconductors, gravure printing versus photolithographic patterning of the OFET dielectric, and long-channel (>1 µm) versus short channel (<1 µm) OFETs.Gravure printing enables very large-area, fast, roll-to-roll manufacturing, limited by the expense and time cost of fabricating clichés (printing plates). [ 16,17 ] Inkjet printing enables a computer-designed circuit to be printed readily and easily, limited by the relative throughput and speed of printing. [ 2 ] However, the resolution of both technologies is still restricted to the micrometer scale and larger by the challenge of reliably transferring inks onto a substrate without spreading or dewetting, while still maintaining electrical performance. While recent approaches are improving upon this limit, for example, the work of Kang et al. on gravure printed sub-5 µm gate electrodes, [ 18 ] or that of Sekitani et al. on 2 µm inkjet printed electrodes, [ 19 ] the options for patterning sub-micrometer electrode geometries are limited.We have previously demonstrated how ultraviolet nanoimprint lithography (UV-NIL) is a viable method for patterning sub-micrometer channel length OFETs on plastic. [ 20 ] Our approach also uses self-aligned lithography to minimize the overlap between the gate-source and gate-drain electrodes, reducing parasitic overlap capacitances that reduce the switching speed of OFETs. [ 21,22 ] Self-alignment yields other benefi ts such as overcoming equipment alignment tolerances, reducing leakage currents, and is compatible with more complex circuitry such as self-aligned unipolar ring oscillators. [ 23 ] In this work, we have used bottom-gate bottom-contact architectures, to avoid exposing the semiconductor to both the ultraviolet light and processing chemicals used for self-alignment. In addition to self-alignment, here we extend the fabrication approach further by incorporating gravure printed dielectrics and semiconductors, as well as inkjet printed semiconductors. We demonstrate both p-and n-type devices patterned side-by-side on the same substrate along with complementary inverters and logic gates. Figure 1 illustrates the materials and architectures used in this work. Aluminum OFET gates were patterned either photolithographically (PL) or via UV-NIL. A cross-linkable proprietary dielectric (GSID 938109-1, BASF) [ 24,25 ] was either PL patterned or gravure printed. Self-aligned gold electrodes were patterned Organic electronics is a maturing fi eld, [ 1 ] replete with a large variety of devices and fabrication technologies. [ 2 ] Often...

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High‐Performance Ambipolar Diketopyrrolopyrrole‐Thieno[3,2‐b]thiophene Copolymer Field‐Effect Transistors with Balanced Hole and Electron Mobilities

Cited by 541 publications

References 37 publications

Electron and hole polaron accumulation in low-bandgap ambipolar donor-acceptor polymer transistors imaged by infrared microscopy

Electron and hole polaron accumulation in low-bandgap ambipolar donor-acceptor polymer transistors imaged by infrared microscopy

Contactless charge carrier mobility measurement in organic field-effect transistors

Complementary Organic Logic Gates on Plastic Formed by Self‐Aligned Transistors with Gravure and Inkjet Printed Dielectric and Semiconductors

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