High Performance Amplifier Element Realization via MoS₂/GaTe Heterostructures

Abstract

Abstract2D layered materials (2DLMs), together with their heterostructures, have been attracting tremendous research interest in recent years because of their unique physical and electrical properties. A variety of circuit elements have been made using mechanically exfoliated 2DLMs recently, including hard drives, detectors, sensors, and complementary metal oxide semiconductor field‐effect transistors. However, 2DLM‐based amplifier circuit elements are rarely studied. Here, the integration of 2DLMs with 3D bulk materials to fabricate vertical junction transistors with current amplification based on a MoS2/GaTe heterostructure is reported. Vertical junction transistors exhibit the typical current amplification characteristics of conventional bulk bipolar junction transistors while having good current transmission coefficients (α ∼ 0.95) and current gain coefficient (β ∼ 7) at room temperature. The devices provide new attractive prospects in the investigation of 2DLM‐based integrated circuits based on amplifier circuits.

A gate-tunable symmetric bipolar junction transistor fabricatedviafemtosecond laser processing

“…The current gain b of $6 is not too big but it is comparable to previously reported results. 32,34,35 There are two main reasons for the relatively low current gain. First, the gap size made by laser processing between the emitter and collector may be still large.…”

“…[20][21][22][23][24] One of the most signicant investigations in 2D materials is in van der Waals heterostructure devices. 14 Multifunctional p-n diodes, 25,26 ultrasensitive photodetectors, 27,28 high-performance memories, 29,30 light-emitting diodes, 31 and bipolar junction transistors 32 have been fabricated from these materials, showing their potential application in future nanoelectronics. Although several studies on BJTs based on 2D van der Waals heterostructures can be found in the literature, [33][34][35][36][37][38] these structures have an intricate growth procedure 33,34 and tedious multistep transfer process, [35][36][37] making them difficult to fabricate.…”

Direct synthesis of two-dimensional MoS2 on p-type Si and application to solar hydrogen production

“…The elementary building blocks of p-n junctions are vital for semiconductor electronic devices such as integrated circuits, photodetectors, solar cells, LEDs, diodes, and transistors [20][21][22][23][24] . Recently, the integration of lowdimensional TMD materials with single-crystal traditional semiconductors (e.g., Si, GaAs, and InP) has significantly impacted the development of functional electronic devices, including field effect transistors (FETs), diodes, photodetectors, and photoelectrochemical cells 21,[25][26][27] .…”

A Photoelectric-Stimulated MoS 2 Transistor for Neuromorphic Engineering

“…Many artificial synaptic devices have been reported, including oxide electric double layer [12][13][14], ionic liquid/gel transistors [15][16][17][18][19][20], memristors [21][22][23][24][25][26][27][28][29], phase-changed memory [30][31][32][33][34], and ferroelectric transistors [35][36][37]. Also, the unique internal and interfacial structures of two-dimensional (2D) materials, as well as their electrical and optical properties [38][39][40], make them promising candidates for complex neuromorphic engineering [41][42][43][44][45]. In addition, optical modulation can establish a connection between the external environment and the brain through the visual system [46][47][48], and combining effective optoelectronic modulation is critical for neuromorphic engineering applications, such as artificial eyes and super vision [49][50][51].…”