This paper demonstrates a new 22-T (transistor) hybrid adder for low-power applications using 22nm shorted gate (SG) tri-gate (TG) FinFET technology. Large conducting channels and increased gate control make FinFET suitable for high-speed low-power computing circuits. The proposed hybrid adder is designed using pass transistor and CMOS logic. Also, it adopts the state-of-the-art techniques of dynamic leakage balancing on the ground path and stacking ground transistors that reduce parasitic effects and increase the speed of the logic transitions compared to traditional designs. Extensive simulations were executed to characterize for PDP (Power Delay Product), power dissipation, and delay of the hybrid adder circuit. From the Monte Carlo analysis, the robustness and efficiency of the circuit are also observable for minimum variation in power and delay due to process voltage and temperature (PVT) variations. Besides, concerning the supply variability and temperature, the circuit shows excellent stability by keeping the power consumption and delay performance consistent. The proposed 22-T hybrid adder using 22nm SG-TG FinFET are very well-suited in low power and high-speed processors showing highly stable behaviour with reduced process variability.