High-Performance and Flexible Neodymium-Doped Indium-Zinc-Oxide Thin-Film Transistor With All Copper Alloy Electrodes

Lu, Kuankuan; Peng, Junbiao; Zhang, Jianhua; Guo, Dong; Xiang, Jingyu; Lin, Zimian; Zhang, Xinyi; Wang, Tingting; Ning, Honglong; Yao, Rihui

doi:10.1109/led.2020.2967408

Cited by 11 publications

(6 citation statements)

References 25 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…In addition, UV light with a power density of 175 mW cm −2 and thermal annealing at 200 • C are unable to provide enough energy for the PrIZO film crystallization. The amorphous structure is conducive to large-scale uniform production [17]. The almost coincidence between the fitting curve and the XRR test result means that the deposited films are dense [18].…”

Section: Figures 3(a) and (B) Is The Xrd Pattern Of Prizo Films With ...mentioning

confidence: 66%

UV irradiation assisted low-temperature process for thin film transistor performance improvement of praseodymium-doped indium zinc oxide

Zhang,

Yao,

et al. 2023

J. Phys. D: Appl. Phys.

Self Cite

View full text Add to dashboard Cite

Flexible displays have developed rapidly in recent years, low-temperature process to produce high performance amorphous oxide semiconductor devices are significant for the wide application of low-cost flexible display. In this work, praseodymium-doped indium zinc oxide semiconductor deposited by vacuum sputtering was irradiated with UV light before low-temperature thermal annealing. The treated semiconductor retains its characteristics of amorphous and high transparency to visible light. The carrier concentration and oxygen-related defects of the PrIZO films were significant changed under the superposition of UV irradiation and thermal annealing, the effects of UV light and thermal annealing can be well superimposed. The PrIZO-TFT that have been thermally annealed at 200 °C for 1 h after irradiated by UV light with power density of 175 mW cm−2 for 1800 s exhibit an optimal performance (μ sat of 12.34 cm2 V−1·s−1, I on/I off of 3.8 × 108, V th of 0.7 V, SS of 0.15 V/decade) and stability. The device performance broadens the application prospect of AOS TFT in low-cost flexible display.

show abstract

Section: Figures 3(a) and (B) Is The Xrd Pattern Of Prizo Films With ...mentioning

confidence: 66%

UV irradiation assisted low-temperature process for thin film transistor performance improvement of praseodymium-doped indium zinc oxide

Zhang,

Yao,

et al. 2023

J. Phys. D: Appl. Phys.

Self Cite

View full text Add to dashboard Cite

show abstract

“…As a result, an improved uniformity regarding parameter spreads of, e.g., threshold voltage shifts and better stability to environmental conditions such as light or heat can be found. [109] There are several reports on flexible IZO-based TFTs, [107,108,[110][111][112] as summarized in Table S3 (Supporting Information). The main fabrication procedure for the active layer is magnetron sputtering, [107,110,111] but a more uniform and conformal deposition has been reported by atomic layer deposition (ALD).…”

Section: Approaches For Improving Flexible N-type Mo Tftsmentioning

confidence: 99%

Flexible Oxide Thin Film Transistors, Memristors, and Their Integration

Panca

Panidi

Faber

et al. 2023

Adv Funct Materials

View full text Add to dashboard Cite

Flexible electronics have seen extensive research over the past years due to their potential stretchability and adaptability to non‐flat surfaces. They are key to realizing low‐power sensors and circuits for wearable electronics and Internet of Things (IoT) applications. Semiconducting metal‐oxides are a prime candidate for implementing flexible electronics as their conformal deposition methods lend themselves to the idiosyncrasies of non‐rigid substrates. They are also a major component for the development of resistive memories (memristors) and as such their monolithic integration with thin film electronics has the potential to lead to novel all‐metal‐oxide devices combining memory and computing on a single node. This review focuses on exploring the recent advances across all these fronts starting from types of suitable substrates and their mechanical properties, different types of fabrication methods for thin film transistors and memristors applicable to flexible substrates (vacuum‐ or solution‐based), applications and comparison with rigid substrates while additionally delving into matters associated with their monolithic integration.

show abstract

“…There has been a substantial increase in the number of studies focused on metal oxide thin films due to their enormous potential for applications, either as insulators or semiconductors. [ 1,2 ] To date, thin film transistors (TFTs) based on oxide thin films have been studied because of their excellent electrical properties, high uniformity, and good transparency. [ 3 ] With the growing need for high‐performance electronics, conventional low‐ k materials such as SiO 2 are unable to fulfill demand due to direct tunneling, resulting in significant device reliability issues.…”

Section: Introductionmentioning

confidence: 99%

Low‐Temperature Atomic Layer Deposition of High‐k SbO_x for Thin Film Transistors

Yang

Bahrami

Ding

et al. 2022

Adv Elect Materials

View full text Add to dashboard Cite

SbOx thin films are deposited by atomic layer deposition (ALD) using SbCl5 and Sb(NMe2)3 as antimony reactants and H2O and H2O2 as oxidizers at low temperatures. SbCl5 can react with both oxidizers, while no deposition is found to occur using Sb(NMe2)3 and H2O. For the first time, the reaction mechanism and dielectric properties of ALD‐SbOx thin films are systematically studied, which exhibit a high breakdown field of ≈4 MV cm−1 and high areal capacitance ranging from 150 to 200 nF cm−2, corresponding to a dielectric constant ranging from 10 to 13. The ZnO semiconductor layer is integrated into a SbOx dielectric layer, and thin film transistors (TFTs) are successfully fabricated. A TFT with a SbOx dielectric layer deposited at 200 °C from Sb(NMe2)3 and H2O2 presents excellent performance, such as a field effect mobility (µ) of 12.4 cm2 V−1 s−1, Ion/Ioff ratio of 4 × 108, subthreshold swing of 0.22 V dec−1, and a trapping state (Ntrap) of 1.1 × 1012 eV−1 cm−2. The amorphous structure and high areal capacitance of SbOx boosts the interface between the semiconductor and dielectric layer of TFT devices and provide a strong electric field for electrons to improve the device mobility.

show abstract

High-Performance and Flexible Neodymium-Doped Indium-Zinc-Oxide Thin-Film Transistor With All Copper Alloy Electrodes

Cited by 11 publications

References 25 publications

UV irradiation assisted low-temperature process for thin film transistor performance improvement of praseodymium-doped indium zinc oxide

UV irradiation assisted low-temperature process for thin film transistor performance improvement of praseodymium-doped indium zinc oxide

Flexible Oxide Thin Film Transistors, Memristors, and Their Integration

Low‐Temperature Atomic Layer Deposition of High‐k SbO_x for Thin Film Transistors

Contact Info

Product

Resources

About

High-Performance and Flexible Neodymium-Doped Indium-Zinc-Oxide Thin-Film Transistor With All Copper Alloy Electrodes

Cited by 11 publications

References 25 publications

UV irradiation assisted low-temperature process for thin film transistor performance improvement of praseodymium-doped indium zinc oxide

UV irradiation assisted low-temperature process for thin film transistor performance improvement of praseodymium-doped indium zinc oxide

Flexible Oxide Thin Film Transistors, Memristors, and Their Integration

Low‐Temperature Atomic Layer Deposition of High‐k SbOx for Thin Film Transistors

Contact Info

Product

Resources

About

Low‐Temperature Atomic Layer Deposition of High‐k SbO_x for Thin Film Transistors