High performance and low power consumption resistive random access memory with Ag/Fe₂O₃/Pt structure

Abstract

Due to magnetic field tunability and the abundance of iron in the Earth’s crust, iron oxide-based resistive random access memory (RRAM) is considered to be low cost and potential for multi-level storage. However, the relatively high operation voltage (>1 V) and small storage window (<100) limit its application. In this work, the devices with simple Ag/Fe2O3/Pt structure exhibit typical bipolar resistive switching with ultralow set voltage (V set) of 0.16 V, ultralow reset voltage (V reset) of −0.04 V, high OFF/ON resistance ratio of 103, excellent cycling endurance more than 104 and good retention time longer than 104 s. Each major parameter has about an order of magnitude improvement compared to the previous data. The devices demonstrate outstanding stable low power consumption quality. Based on the analysis of the experimental results, a percolation model of silver ion migration was established and confirmed that low operation voltage is attributed to the amorphous oxide layer with large porosity. During electrical testing, the compliance current (I c) and maximum reset voltage (V max) can also affect the device performance. This discovery suggests Fe2O3 memristor has significant potential for application and provides a new idea for the realization of high-performance low-power RRAM.

Forming-Free, Low-Voltage, and High-Speed Resistive Switching in Ag/Oxygen-Deficient Vanadium Oxide(VOx)/Pt Device through Two-Step Resistance Change by Ag Filament Formation

“…1 To date, the performance of oxide-based RRAM has been substantially improved using various materials such as HfO 2 , 2 Al 2 O 3 , 3 TiO x , 4,5 ZnO, 6 CeO 2 , 7 and Fe 2 O 3 . 8 In particular, filament-based switching devices are classified as valence change memory (VCM) or conductive-bridge random access memory (CBRAM) devices depending on whether the filament is composed of oxygen vacancies (V o ) or metal cations generated from active electrodes, respectively. Resistive switching occurs due to the redistribution of oxygen or metal ions inside the oxide switching layer; hence, enhancing the migration of these ions under an electric field can reduce the operation voltage and increase the speed.…”

“…The device for RRAM operates via the resistive switching of the MIM structure between a high-resistance state (HRS) and a low-resistance state (LRS) using the formation and rupture of conducting filaments or the modulation of the oxide–metal interface . To date, the performance of oxide-based RRAM has been substantially improved using various materials such as HfO 2 , Al 2 O 3 , TiO x , , ZnO, CeO 2 , and Fe 2 O 3 . In particular, filament-based switching devices are classified as valence change memory (VCM) or conductive-bridge random access memory (CBRAM) devices depending on whether the filament is composed of oxygen vacancies (V o ) or metal cations generated from active electrodes, respectively.…”

α-Fe2O3-based artificial synaptic RRAM device for pattern recognition using artificial neural networks

“…Earlier, Xiaobing Yan et al has proved change in resistive switching model of α-Fe 2 O 3 by electroforming in the films [31]. Digital switching with high performance and low power consumption have been demonstrated on Ag/Fe 2 O 3 /FTO-based RRAM device [32]. Yet in another study, Xian Wan et al have reported a Biomimicked atomic-layer-deposited iron oxide-based memristor with synaptic potentiation and depression functions [33].…”

Stable and reliable IGZO resistive switching device with HfAlO x interfacial layer

“…The electrically triggered RS phenomenon has been observed in numerous materials, including perovskite, amorphous silicon, and metal oxides [2]. Among these materials, metal oxides are extensively studied, such as NiO [9], TiO 2 [10], ZnO [11], HfO x [12], ZrO 2 [13], Fe 2 O 3 [14], MoO x [15], and Cu(In 1−x Ga x )Se 2 [16].…”