High Performance and Low power Monolithic Three-Dimensional Sub-50 nm Poly Si Thin film transistor (TFTs) Circuits

Abstract

Development of manufacture trend for TFTs technologies has focused on improving electrical properties of films with the cost reduction to achieve commercialization. To achieve this goal, high-performance sub-50 nm TFTs-based MOSFETs with ON-current (Ion)/subthreshold swing (S.S.) of 181 µA/µm/107 mV/dec and 188 µA/µm/98 mV/dec for NMOSFETs and PMOSFETs in a monolithic 3D circuit were demonstrated by a low power with low thermal budget process. In addition, a stackable static random access memory (SRAM) integrated with TFTs-based MOSFET with static noise margins (SNM) equals to 390 mV at VDD = 1.0 V was demonstrated. Overall processes include a low thermal budget via ultra-flat and ultra-thin poly-Si channels by solid state laser crystallization process, chemical-mechanical polishing (CMP) planarization, plasma-enhanced atomic layer deposition (ALD) gate stacking layers and infrared laser activation with a low thermal budget. Detailed material and electrical properties were investigated. The advanced 3D architecture with closely spaced inter-layer dielectrics (ILD) enables high-performance stackable MOSFETs and SRAM for power-saving IoT/mobile products at a low cost or flexible substrate.

Single-Grain Gate-All-Around Si Nanowire FET Using Low-Thermal-Budget Processes for Monolithic Three-Dimensional Integrated Circuits

“…Ultra-thin-body (UTB) silicon in an insulator (SOI) configuration has been widely studied and adopted in our previous works [ 26 , 27 , 28 , 29 ] for its outstanding electrostatics due to excellent suppression of the short channel effects (SCEs). However, it is still hard to thoroughly remove the interface traps and fixed oxide defects in back oxide which inevitably degrade the device performance [ 30 , 31 ].…”

Highly Responsive Blue Light Sensor with Amorphous Indium-Zinc-Oxide Thin-Film Transistor based Architecture

“…With the rapid progress and continuing improvements of thin-film transistors (TFTs) technologies over the past few years, TFT display panels have been developed not only for screens but also for other applications, like flexible electronics, biomedicine sensors, nonvolatile memories, 3-dimentional integrated circuits 1–5 . Among those novel applications, the most interesting topic of TFT-LCDs would be the optical detection sensor.…”

Low-hole concentration polycrystalline germanium by CO2 laser annealing for the fabrication of an enhancement-mode nMOSFET

“…Chemical mechanical polishing (CMP) can be used to reduce the surface roughness of the poly-Ge film. 21) Figure 3(a) shows the sheet resistance (R s ) of the poly-Ge film as a function of the UV-LSA power density for various CO 2 laser power densities. The CO 2 -LA-treated poly-Ge films had a maximum R s when they were converted from the nc-Ge film at a UV laser power density of 112.5 mJ=cm 2 .…”