2016 IEEE International Electron Devices Meeting (IEDM) 2016
DOI: 10.1109/iedm.2016.7838526
|View full text |Cite
|
Sign up to set email alerts
|

High-performance and reliable elevated-metal metal-oxide thin-film transistor for high-resolution displays

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
1
1
1
1

Citation Types

0
30
0

Year Published

2018
2018
2022
2022

Publication Types

Select...
8

Relationship

7
1

Authors

Journals

citations
Cited by 45 publications
(30 citation statements)
references
References 6 publications
0
30
0
Order By: Relevance
“…As the edges of the channel region are self-aligned to those of the elevated metal electrodes, the shortest channel length (L) is determined by the minimum photolithographically defined separation (λ) between the electrodes. This is desirable for the realization of higher resolution displays [6].…”
Section: Introductionmentioning
confidence: 99%
“…As the edges of the channel region are self-aligned to those of the elevated metal electrodes, the shortest channel length (L) is determined by the minimum photolithographically defined separation (λ) between the electrodes. This is desirable for the realization of higher resolution displays [6].…”
Section: Introductionmentioning
confidence: 99%
“…The transfer characteristics of the resulting TFTs, exhibiting complete elimination of the L-dependence of Von even down to L = 2 µm, as shown in Figure 4. Other relevant electrical parameters of this TFT with L = 2 µm are a field-effect mobility of ~6 cm 2 /Vs; an on/off ratio over 10 11 ; a subthreshold slope ~110 mV/decade; and a low widthnormalized leakage current of no more than 1 fA/µm [10]. With the SCE eliminated with dehydrogenating the PES, the merit of EMMO TFT on the device footprint can be furthest enhanced.…”
Section: W=100mmentioning
confidence: 99%
“…For conventional back-channel-etched (BCE) and the etch-stop (ES) architectures bottom-gate IGZO TFTs, the device performance is usually compromised for BCE TFTs because of damage to the channel layer or the device footprint is larger for ES TFTs because of the longer channel length (L). Enabled by the annealing-induced formation of conductive source/drain (S/D) regions in IGZO [7], [8], an elevated-metal metal-oxide (EMMO) architecture offering an ES-like protection of the channel region while maintaining a BCE-like small footprint has recently been proposed [9], [10]. Though an EMMO TFT ( Fig.…”
Section: Downscaling Of Igzo Tftmentioning
confidence: 99%
“…where = 3 and = 6 are constants representing engineering margins mandated by the design rules [10]. The for the third design is the largest, which makes it more desirable than the other two designs.…”
Section: Geometric Design and Aperture Ratiomentioning
confidence: 99%