2015 IEEE International Electron Devices Meeting (IEDM) 2015
DOI: 10.1109/iedm.2015.7409818
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High performance and reliable silicon field emission arrays enabled by silicon nanowire current limiters

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Cited by 7 publications
(14 citation statements)
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“…In the fabrication process presented by Guerrera, a 1.1 jim thick resist is used to pattern dots with a CD of 500 nm [34]. In order to improve the CD uniformity, the amplitude of the Swing Curve must bereduced.…”
Section: Introductionmentioning
confidence: 99%
“…In the fabrication process presented by Guerrera, a 1.1 jim thick resist is used to pattern dots with a CD of 500 nm [34]. In order to improve the CD uniformity, the amplitude of the Swing Curve must bereduced.…”
Section: Introductionmentioning
confidence: 99%
“…This work discusses the development of a new cathode structure which uses Gated Field Emission Arrays (GFEAs) 5‐8 to replace the traditional thermionic cathodes. GFEAs can be modulated in time and addressed spatially using numerous devices spaced out around the device 3 .…”
Section: Introductionmentioning
confidence: 99%
“…Current CFAs generally use a cylindrical format, operate with a backward or forward wave, and use a secondary emitting cathode [1], [2]. One relatively unexplored area of research is the use of gated field emission arrays (GFEAs) [3], [4] to improve current injection control. GFEAs are much more efficient electron current sources than typical thermionic cathodes [2]- [5].…”
Section: Introductionmentioning
confidence: 99%
“…al. [4], [18], [19]. The capacitance of these structures was calculated by their group to be 1-5 nf/cm 2 .…”
Section: Introductionmentioning
confidence: 99%
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