High-performance asymmetric electrode structured light-stimulated synaptic transistor for artificial neural networks

Ran, Yixin; Lu, Wanlong; Wang, Xin; Qin, Zongze; Qin, Xinsu; Lu, Guanyu; Hu, Zhen; Zhu, Yuanwei; Bu, Laju; Lu, Guanghao

doi:10.1039/d3mh00775h

Cited by 10 publications

(1 citation statement)

References 83 publications

(117 reference statements)

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“…1(f) and Table S1 (ESI†). The E for each photosynaptic event is calculated by the following formula: 46 Δ E = V × I × Δ t where V is the voltage applied to both ends of the device; I represents the peak value of the EPSC after one light pulse, and Δ t is the optical pulse width. The power consumption and S of the device prepared in this study are among the best parameters for the reported optoelectronic synapse.…”

Section: Resultsmentioning

confidence: 99%

Multicolor vision perception of flexible optoelectronic synapse with high sensitivity for skin sunburn warning

Yang,

Li,

Chen

et al. 2024

Mater. Horiz.

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Section: Resultsmentioning

confidence: 99%

Multicolor vision perception of flexible optoelectronic synapse with high sensitivity for skin sunburn warning

Yang,

Li,

Chen

et al. 2024

Mater. Horiz.

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High Temperature Resistant Solar‐Blind Ultraviolet Photosensor for Neuromorphic Computing and Cryptography

Chen,

Li,

Niu

et al. 2024

Adv Funct Materials

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High‐temperature resistant solar‐blind optoelectronic synapse has a significant demand such as aerospace and fire warning, which integrates sensing and processing functions to realize complex functions like learning, recognition, and memory. However, developing such device remains a tremendous challenge. Herein, a two‐terminal GaOX solar‐blind optoelectronic synapse with high‐temperature working ability is proposed, and it is applied to neuromorphic computing and cryptography. Benefiting from the high internal gain, the device can detect the light intensity of nW cm−2, displaying one of the best figures‐of‐merit in solar‐blind photodetectors. Furthermore, the device possesses remarkable image sensing and memorization ability because of its ultrasensitive light detection ability and prominent synapse performance resulting from large charge trapping states density. Simultaneously, the device shows undamped photodetection and synaptic performances even at 610 K, reflecting a high‐temperature endurance and a desired property for practical applications under harsh environment. Moreover, by constructing an artificial neural network, high‐precision recognition of handwritten digits are realized under 610 K. A photosynaptic array with 12 × 12 pixels is constructed, and it is applied in cryptography that enables simultaneous sensing and encryption in the same devices. This work is expected to drive the progress of Ga2O3 in harsh environment.

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Plasmonic Photovoltaic Effect of an Original 2D Electron Gas System and Application in Mid‐Infrared Imaging

Wang,

Zhu,

et al. 2024

Adv Funct Materials

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Owing to their consistently emerging applications in modern photonics, highly sensitive and rapid mid‐infrared (MIR) photodetectors, operating at high temperatures, are of great significance. Herein, a novel PbTe/Ge heterostructure is introduced. Notably, the discovery of a 2D electron gas (2DEG) system on the surface of the PbTe layer is experimentally identified for the first time. A high‐performance PbTe/Ge heterostructure MIR photodetector utilizing a plasmonic photovoltaic effect is developed by employing asymmetric electrodes. The photodetecting device demonstrates an exceptionally high detectivity of 1.1 × 1011 Jones along with a short response time of 15 ns at room temperature. Additionally, the proposed plasmonic photovoltaic mechanism of the device is investigated and mainly ascribed to the propagating plasmons, generated by the coupling of the 2DEG with incident MIR photons. Moreover, a linear detector array (LDA) of PbTe/Ge is demonstrated for a thermal imaging application, which exhibits promising high‐quality real‐time imaging via the 2D photodetector arrays on Ge‐based integrated circuits. This work opens up a new way for the development of next‐generation, advanced MIR photonic devices and integrated photonic systems.

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High-performance asymmetric electrode structured light-stimulated synaptic transistor for artificial neural networks

Abstract: Photonics neuromorphic computing shows great prospect due to the advantages of low latency, low power consumption and high bandwidth. Transistors with asymmetric electrode structures are receiving increasing attention due to...

Cited by 10 publications

References 83 publications

Multicolor vision perception of flexible optoelectronic synapse with high sensitivity for skin sunburn warning

Multicolor vision perception of flexible optoelectronic synapse with high sensitivity for skin sunburn warning

High Temperature Resistant Solar‐Blind Ultraviolet Photosensor for Neuromorphic Computing and Cryptography

Plasmonic Photovoltaic Effect of an Original 2D Electron Gas System and Application in Mid‐Infrared Imaging

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