High-performance binary blazed grating coupler used in silicon-based hybrid photodetector integration

Abstract

(2014). High-performance binary blazed grating coupler used in silicon-based hybrid photodetector integration. Optical Engineering, 53 (9), 097106-1-097106-6.High-performance binary blazed grating coupler used in silicon-based hybrid photodetector integration AbstractAn efficient and high-performance binary blazed grating coupler was designed based on silicon-on-insulator (SOI) used for silicon-based hybrid photodetector integration in an arrayed waveguide grating demodulation integrated microsystem. A relatively high coupling efficiency was obtained to optimize mode matching by the finite-difference time-domain method by choosing appropriate grating parameters, including period, etching depth, and fill factor. Coupling efficiency output at 1550 nm for the TE mode reached 68%. This value was >60% in the wavelength range of 1450 to 1600 nm, specifically 71.4% around 1478 nm. An InP/InGaAs photodetector and SOI wafer were integrated by using benzocyclobutene (BCB) bonding. When the thickness of the BCB bonding layer was 440 nm, power absorption efficiency at 1550 nm for the TE mode reached 78.5%, whereas efficiency reached similar to 81.8% around 1475 nm. Abstract. An efficient and high-performance binary blazed grating coupler was designed based on silicon-oninsulator (SOI) used for silicon-based hybrid photodetector integration in an arrayed waveguide grating demodulation integrated microsystem. A relatively high coupling efficiency was obtained to optimize mode matching by the finite-difference time-domain method by choosing appropriate grating parameters, including period, etching depth, and fill factor. Coupling efficiency output at 1550 nm for the TE mode reached 68%. This value was >60% in the wavelength range of 1450 to 1600 nm, specifically 71.4% around 1478 nm. An InP/InGaAs photodetector and SOI wafer were integrated by using benzocyclobutene (BCB) bonding. When the thickness of the BCB bonding layer was 440 nm, power absorption efficiency at 1550 nm for the TE mode reached 78.5%, whereas efficiency reached ∼81.8% around 1475 nm. Disciplines Engineering | Science and Technology Studies IntroductionPhotonic integrated circuits allow the implementation of multiple optical functions on a single substrate, thereby reducing the cost and size of photonic systems. These features have attracted much attention in the last decades, facilitating the development of photonic integrated circuits for telecommunication applications. Si-based optoelectronic circuits 1 have attracted increasing attention because of their compact volumes and because of the high refractive index contrast of these waveguides. The large footprint and high price of the fiber Bragg grating (FBG) demodulation systems limit the promotion and application of optical FBG sensing technology. The results of our previous works on the array waveguide grating (AWG) demodulation system, which is a new kind of optical fiber grating demodulation scheme, show its suitability for optoelectronic integration.2 The system consists of an on-chip light source, ...

Optical second harmonic generation from nanostructured graphene: a full wave approach

“…Resonant waveguide gratings (RWGs) 1 are structures of high interest used in a variety of applications such as filters, 2 biochemical sensors, 3 light absorbers, 4 security devices, 5 and grating couplers. 6,7 These resonances were first observed by Wood 8 in the form of anomalous diffraction phenomena in grating structures. Hessel and Oliver 9 started to differentiate anomalous diffractions in two types: the Rayleigh type, which is the classical Wood's anomaly, and the resonance type.…”

High-Efficiency Grating Couplers for Pixel-Level Flat-Top Beam Generation

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High responsivity random metal grating couplers for terahertz quantum well photodetectors

“…The solid-state THz quantum-well photodetectors (QWPs) [5] based on low dimensional semiconductor structures have many advantages of fast response, mature manufacturing process and small volume, which are suitable for constructing THz high-speed communication and fast imaging systems. For these devices, the principle of operation that based on quantum-well sub-band transitions [6][7][8] cannot directly absorb normal incident light, so a 45°-incident coupling scheme or an integrated coupler [9] such as metal gratings [10,11], etched gratings [12,13] are commonly used to excite the localized electrons in quantum wells from the ground sub-band into the higher subbands. THz QWPs with fixed periodic grating couplers, such as one-dimensional (1D) metal gratings, two-dimensional (2D) metal gratings and dielectric gratings have been studied in previous works.…”

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