High performance diamond-based solar-blind photodetectors enabled by Schottky barrier modulation

Lin, Chao-Nan; Zhang, Zhenfeng; Lu, Ying-Jie; Shan, Chongxin; Zhang, Yuan; Li, Xing; Zang, Jinhao; Pang, Xin-Chang; Dong, Lin; Shan, Chongxin

doi:10.1016/j.carbon.2022.09.001

Cited by 25 publications

(6 citation statements)

References 63 publications

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“…Ultrawide-bandgap semiconductors, showing intrinsic absorb strongly in the solar-blind UV band and excellent environmental stability, are one of the reliable choices to achieve solarblind UV detection and have been widely studied in 3D material systems such as Ga 2 O 3 , [8,10] diamond, [11] and III-nitride. [12] To meet the requirements of miniaturization and multifunctionality of next-generation semiconductor devices, 2D materials with atomic thickness and flatness have been regarded as promising candidates.…”

Section: Introductionmentioning

confidence: 99%

Machine Vision Based on an Ultra‐Wide Bandgap 2D Semiconductor AsSbO₃

Long

Liu

Wang

et al. 2023

Adv Funct Materials

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Facing the future development trend of miniaturization and intelligence of electronic devices, solar‐blind photodetectors based on ultrawide‐bandgap 2D semiconductors have the advantages of low dark current, and high signal‐to‐noise ratio, as well as the features of micro‐nanometer miniaturization and multi‐functionalization of 2D material devices, which have potential applications in the photoelectric sensor part of high‐performance machine vision systems. This study reports a 2D oxide semiconductor, AsSbO3, with an ultrawide bandgap (4.997 eV for monolayer and 4.4 eV for multilayer) to be used to fabricate highly selective solar‐blind UV photodetectors, of which the dark current as low as 100 fA and rejection ratio of UV‐C and UV‐A reaches 7.6 × 103. Under 239 nm incident light, the responsivity is 105 mA W−1 and the detectivity is 7.58 × 1012 Jones. Owing to the remarkable anisotropic crystal structure, AsSbO3 also shows significant linear dichroism and nonlinear optical properties. Finally, a simple machine vision system is simulated by combining the real‐time imaging function in solar‐blind UV with a convolutional neural network. This study enriches the material system of ultrawide‐bandgap 2D semiconductors and provides insight into the future development of high‐performance solar‐blind UV optoelectronic devices.

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Section: Introductionmentioning

confidence: 99%

Machine Vision Based on an Ultra‐Wide Bandgap 2D Semiconductor AsSbO₃

Long

Liu

Wang

et al. 2023

Adv Funct Materials

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“…The optical properties of diamond can be modulated when dopants exist. 185,186 The doped diamond will present colors and characteristic luminescence. [187][188][189][190] Moreover, the elevated defect concentration can also affect the photoelectrical applications of diamond.…”

Section: Photoelectrical Propertiesmentioning

confidence: 99%

Rational design of diamond through microstructure engineering: From synthesis to applications

Ku,

Huang,

et al. 2024

Carbon Energy

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Diamond possesses excellent thermal conductivity and tunable bandgap. Currently, the high‐pressure, high‐temperature, and chemical vapor deposition methods are the most promising strategies for the commercial‐scale production of synthetic diamond. Although diamond has been extensively employed in jewelry and cutting/grinding tasks, the realization of its high‐end applications through microstructure engineering has long been sought. Herein, we discuss the microstructures encountered in diamond and further concentrate on cutting‐edge investigations utilizing electron microscopy techniques to illuminate the transition mechanism between graphite and diamond during the synthesis and device constructions. The impacts of distinct microstructures on the electrical applications of diamond, especially the photoelectrical, electrical, and thermal properties, are elaborated. The recently reported elastic and plastic deformations revealed through in situ microscopy techniques are also summarized. Finally, the limitations, perspectives, and corresponding solutions are proposed.

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“…In addition, PEC PDs have a simple structure, a low-cost fabrication process and fast response speed compared with other self-powered structures, such as p–i–n photodiodes, Schottky barriers (SBs) and metal–semiconductor–metal (MSM) structures. 30–36 By adjusting the type of electrolyte, PEC PDs can achieve more efficient and stable self-powered photodetection. 13…”

Section: Introductionmentioning

confidence: 99%

Efficient organic self-powered photoelectrochemical photodetectors based on conjugated polymers/fullerene heterojunctions

Han,

Zheng,

et al. 2024

J. Mater. Chem. C

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High performance diamond-based solar-blind photodetectors enabled by Schottky barrier modulation

Cited by 25 publications

References 63 publications

Machine Vision Based on an Ultra‐Wide Bandgap 2D Semiconductor AsSbO₃

Machine Vision Based on an Ultra‐Wide Bandgap 2D Semiconductor AsSbO₃

Rational design of diamond through microstructure engineering: From synthesis to applications

Efficient organic self-powered photoelectrochemical photodetectors based on conjugated polymers/fullerene heterojunctions

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High performance diamond-based solar-blind photodetectors enabled by Schottky barrier modulation

Cited by 25 publications

References 63 publications

Machine Vision Based on an Ultra‐Wide Bandgap 2D Semiconductor AsSbO3

Machine Vision Based on an Ultra‐Wide Bandgap 2D Semiconductor AsSbO3

Rational design of diamond through microstructure engineering: From synthesis to applications

Efficient organic self-powered photoelectrochemical photodetectors based on conjugated polymers/fullerene heterojunctions

Contact Info

Product

Resources

About

Machine Vision Based on an Ultra‐Wide Bandgap 2D Semiconductor AsSbO₃

Machine Vision Based on an Ultra‐Wide Bandgap 2D Semiconductor AsSbO₃