High-performance diodes based on black phosphorus/carbon nanomaterial heterostructures

Ye, Xiaowo; Zhang, Yanming; Gao, Shengguang; Zhao, Xinshu; Xu, Ke; Wang, Long; Jiang, Shuqin; Shi, Feng; Yang, Jingyun; Cao, Zhu; Chen, Changxin

doi:10.1039/d3na00107e

Cited by 2 publications

(1 citation statement)

References 37 publications

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“…First, high-quality bulk BP crystals were prepared using a short-way transport reaction [ 18 , 19 ], resulting in crystal branches with smooth surfaces and a metallic luster. The BP branches exhibited varying dimensions with widths ranging from 30 μm to 5 mm, lengths ranging from 3 mm to 10 mm, and thicknesses ranging from several micrometers to tens of micrometers.…”

Section: Resultsmentioning

confidence: 99%

Black Phosphorus Field-Effect Transistors with Improved Contact via Localized Joule Heating

Shi,

Gao,

et al. 2023

Nanomaterials

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Two-dimensional (2D) black phosphorus (BP) is considered an ideal building block for field-effect transistors (FETs) owing to its unique structure and intriguing properties. To achieve high-performance BP-FETs, it is essential to establish a reliable and low-resistance contact between the BP and the electrodes. In this study, we employed a localized Joule heating method to improve the contact between the 2D BP and gold electrodes, resulting in enhanced BP-FET performance. Upon applying a sufficiently large source–drain voltage, the zero-bias conductance of the device increased by approximately five orders of magnitude, and the linearity of the current–voltage curves was also enhanced. This contact improvement can be attributed to the formation of gold phosphide at the interface of the BP and the gold electrodes owing to current-generated localized Joule heat. The fabricated BP-FET demonstrated a high on/off ratio of 4850 and an on-state conductance per unit channel width of 1.25 μS μm−1, significantly surpassing those of the BP-FETs without electrical annealing. These findings offer a method to achieve a low-resistance BP/metal contact for developing high-performance BP-based electronic devices.

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Section: Resultsmentioning

confidence: 99%

Black Phosphorus Field-Effect Transistors with Improved Contact via Localized Joule Heating

Shi,

Gao,

et al. 2023

Nanomaterials

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Hybrid black phosphorus-plasmonic nanograting for high-performance infrared sensing

Ogawa,

Shimatani,

Fukushima

et al. 2024

Infrared Technology and Applications L

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Although black phosphorous (BP) is a promising two-dimensional material for next-generation infrared (IR) photodetectors, enhancing its quantum efficiency remains challenging. Herein, we proposed a hybrid BP-plasmonic nanograting with high aspect ratios for use in advanced functional IR photodetectors. Plasmonic nanogratings with high aspect ratios exhibit wide-angle near-unity absorption in the IR-wavelength region; this absorption is based on the grating depth. By forming BP on top of the plasmonic nanogratings and modifying the edge structure of BP, we achieved a hybrid structure that exhibits strong absorption. The results demonstrate the viability of BP-based high-performance IR photodetectors.

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High-performance diodes based on black phosphorus/carbon nanomaterial heterostructures

Abstract: The performance of diodes, which are the basic building blocks in integrated circuits, highly depends on the materials used. Black phosphorus (BP) and carbon nanomaterials with unique structures and excellent...

Cited by 2 publications

References 37 publications

Black Phosphorus Field-Effect Transistors with Improved Contact via Localized Joule Heating

Black Phosphorus Field-Effect Transistors with Improved Contact via Localized Joule Heating

Hybrid black phosphorus-plasmonic nanograting for high-performance infrared sensing

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