High-Performance Double-Gate $\alpha $ -InGaZnO ISFET pH Sensor Using a HfO2 Gate Dielectric

Lu, Chih-Hung; Hou, Tuo‐Hung; Pan, Tung-Ming

doi:10.1109/ted.2017.2776144

Cited by 42 publications

(26 citation statements)

References 30 publications

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“…ISFET typical applications are related to pH sensing. [133][134][135][136][137] When the ISFET is configured to be sensitive to ions different than H + they are also referred to as ChemFETs. 138,139 Chang and Lu developed an ISFET biosensor implemented in a 0.35-μm CMOS process for direct detection of DNA hybridization.…”

Section: Field-effect-transistor (Fet) Nanosensorsmentioning

confidence: 99%

Review—Bio-Nanosensors: Fundamentals and Recent Applications

Perdomo

Marmolejo‐Tejada

Jaramillo-Botero

2021

J. Electrochem. Soc.

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Section: Field-effect-transistor (Fet) Nanosensorsmentioning

confidence: 99%

Review—Bio-Nanosensors: Fundamentals and Recent Applications

Perdomo

Marmolejo‐Tejada

Jaramillo-Botero

2021

J. Electrochem. Soc.

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“…Prior to being used as ENFET, the device has been biased for electrical characterization. Conventionally, for single gate operating mode, the bottom gate (BG) is grounded, whereas the top gate (TG) is grounded for double gate operation [15]. Using this methodology, TG voltage (VGS(T)), BG voltage (VGS(B)) and drain voltage (VDS) have been fixed at 0.6 V, 1.0 V and 0.3 V respectively as shown in Fig.1.…”

Section: B Characterizationmentioning

confidence: 99%

High Performance CNTENFET with K/PPy/CNT nanocomposite biosensing layer for Cholesterol Detection

Keshwani¹,

Dutta²

2021

Preprint

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We have reported a high-performance dual gated carbon nanotube enzyme modified field-effect transistor (CNT-ENFET) for cholesterol detection. To improve the device performance, we have used dual-gate design with high κ dielectric as top gate and low κ dielectric as bottom gate and a nanocomposite of potassium doped carbon nanotube with polypyrrole (K/PPy/CNT) as the biosensing membrane. The device exhibited a good sensitivity (~1.0 V/decade), low response time (~1 s), wide dynamic range (0.1 - 25) mM, wide linear range (2-20 mM), low detection limit (0.11 mM), good stability (7 months) and high selectivity (interference ~1.8 %).

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“…Dual Gate Carbon Nanotube Ion Sensitive Field Effect Transistor (DG-CNTISFET) has high-κ dielectric material HfO2 (κ ~25) as the top gate insulator and a low-κ dielectric material ZnO (κ ~1.5) as the bottom gate insulator for measuring pH value and the device analyzed for the drift rate and hysteresis [26]. The three HfO2 gate dielectric thickness on the top surface of gate is used in the Double gate amorphous indium-gallium zinc oxide Ion Sensitive Field Effect Transistor (ISFET) device for pH sensing [27]. Nano sheet gate-all-round transistor is designed using sub stack and improves the RF performance through the cut-off-frequency.…”

Section: Introductionmentioning

confidence: 99%

Optimization of DMG-CNTFET Photo Detector for Different Illumination Conditions by Nano Scale Size and Doping Through Self-consistent Poisson- Schrodinger Equations

May

Rajamani

Kavitha

2021

Preprint

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In this paper, we propose a nano scale Dual Material Gate Carbon Nanotube field-effect transistor (DMG-CNTFET) photo detector based on self-consistent 2D Poisson and Schrodinger equation. The main advantage of the proposed device is the improved performance due to dual material gate consisting of two laterally contacting Molybdenum and Titanium metals (M1,M2) with two different work functions (𝜙𝑔𝑀1, 𝜙𝑔𝑀2). The 2D-Poisson equation is solved through finite difference method in open boundary for dark and illuminated condition. The Schrodinger equation is solved through non-equilibrium green function. The proposed DMG-CNTFET photo detector overcomes the problem of maximum thickness in gate oxide and gate size by nano-scaled sizing and highly doped source and drain. The gain and cut off frequency of the device are increased due to the reduced work function and the drain conductance. The characteristics of the proposed transistor are validated through various parameters such as drain current, transfer, sub threshold swing, trans-conductance, gain and cutoff frequency. From the simulation results, the proposed DMG-CNTFET photo detector provides better performance of trans conductance, gain and cutoff frequency. These device characteristics are the key parameters in the design and fabrication of various electronic circuitry and design and hence the relative performance improvement is achievable.

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High-Performance Double-Gate $\alpha $ -InGaZnO ISFET pH Sensor Using a HfO2 Gate Dielectric

Cited by 42 publications

References 30 publications

Review—Bio-Nanosensors: Fundamentals and Recent Applications

Review—Bio-Nanosensors: Fundamentals and Recent Applications

High Performance CNTENFET with K/PPy/CNT nanocomposite biosensing layer for Cholesterol Detection

Optimization of DMG-CNTFET Photo Detector for Different Illumination Conditions by Nano Scale Size and Doping Through Self-consistent Poisson- Schrodinger Equations

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