High-Performance Dual-Step Evanescently Coupled Uni-Traveling-Carrier Photodiodes

Recent progress in InGaN-based photodetectors for visible light communication

“…These features can greatly improve the 3-dB bandwidth and output current of the PDs. 65 Li et al 66 proposed and prepared a dual-drift-layer UTCPD. During the device fabrication process, they inserted a 20 nm thick depleted p-type cliff layer between the velocity overshoot layer and the velocity saturation layer.…”

High-Speed Photodetectors for Microwave Photonics

“…To date, monolithic Ge-on-Si PD arrays have achieved high RF output power up to 40 GHz. [9,11,12,19,39,40,49,50,[53][54][55][56][57][58][59][60][61][62][63][64][65][66][67][68][69][70].…”

InP-based evanescently coupled high-responsivity photodiodes with extremely low dark current density integrated diluted waveguide at 1550 nm

“…Recently, a diluted waveguide has been used to evanescently couple the light mode from a fibre to a waveguide. [6,7,17] Figure 1(a) shows a schematic of our evanescently coupled photodiode (ECPD) in which a diluted waveguide and two optical matching layers are used.…”