2014
DOI: 10.1049/el.2014.2848
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High‐performance electro‐optic polarisation conversion type modulator for short‐wavelength light using periodically poled MgO:LiNbO 3

Abstract: High-performance electro-optic polarisation conversion type modulator for short-wavelength light using periodically poled MgO:LiNbO 3 T. Inoue and T. SuharaAn electro-optic (EO) polarisation conversion type modulator for short-wavelength light using periodically poled MgO:LiNbO 3 is fabricated and the characteristics are evaluated using a tunable GaN laser. High-quality domain-inverted gratings with 3.6 μm were obtained over a 1.0 × 1.0 mm 2 area. The maximum conversion efficiency, as high as 91%, was obtained… Show more

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Cited by 2 publications
(3 citation statements)
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References 11 publications
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“…7, the wavelength acceptance bandwidth, 2Δλ ≅ 5λ 2 =2πL(n eg − n og ), is expected to be ∼17 nm, which is much broader than that of the MgO:LN device (2Δλ ∼ 0.7 nm for λ = 407 nm and L = 1.0 mm). 14) We demonstrated an EO polarization conversion type modulator using periodically poled 8%MgO:cLT for the first time. A maximum efficiency of 93% was obtained, and the temperature acceptance bandwidth of the modulator was in close agreement with the calculated value.…”
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confidence: 99%
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“…7, the wavelength acceptance bandwidth, 2Δλ ≅ 5λ 2 =2πL(n eg − n og ), is expected to be ∼17 nm, which is much broader than that of the MgO:LN device (2Δλ ∼ 0.7 nm for λ = 407 nm and L = 1.0 mm). 14) We demonstrated an EO polarization conversion type modulator using periodically poled 8%MgO:cLT for the first time. A maximum efficiency of 93% was obtained, and the temperature acceptance bandwidth of the modulator was in close agreement with the calculated value.…”
mentioning
confidence: 99%
“…We demonstrated a polarization conversion type modulator for violet light using periodically poled MgO doped LN (MgO:LN) having photorefractive damage resistance higher than that of non-doped LN. 14) Because the domain-inversion period required in the MgO:LN device is short (a few µm) and the wavelength acceptance bandwidth is narrow (<1 nm), fabrication is not easy and the phase-matching condition is critical. The birefringence of LT 15) is much smaller than that of LN; hence, it is expected that the required period will be larger and that fabrication will be easier in the modulator using LT.…”
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confidence: 99%
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