High performance enhancement-mode thin-film transistor with graphene quantum dot-decorated In<sub>2</sub>O<sub>3</sub> channel layers

Xu, Xiaorong; He, Gang; Jiang, Shanshan; Wang, Leini; Wang, Wenhao; Liu, Yanmei; Gao, Qian

doi:10.1039/d2ra01051h

Cited by 5 publications

(1 citation statement)

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“…Figure a presents the voltage transfer curve (VTC) and gain curve at different voltage supply ( V DD ) levels, with the circuit diagram of the inverter shown in Figure b. Compared to other In 2 O 3 -based devices, the gain was relatively low, especially compared to films deposited from nonaqueous solutions, which could achieve gains around 25 on SiO 2 and even higher on high- k dielectrics such as Al 2 O 3 or ZrO x . , The dynamic voltage response was also evaluated at V DD = 5 V; Figure c shows the characteristics at 10 Hz. The dynamic switching of an inverter from the OFF state to the ON state and from the ON state to the OFF state can be characterized by the rising time (τ R ) and falling time (τ F ).…”

Section: Resultsmentioning

confidence: 99%

Doping of Indium Oxide Semiconductor Film Prepared Using an Environmentally Friendly Aqueous Solution Process with Sub-1% Molybdenum to Improve Device Performance and Stability

Tarsoly

Lee

Heo

et al. 2023

ACS Appl. Electron. Mater.

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Amorphous In2O3 is an emerging metal oxide semiconductor that is used widely because of its high mobility and solution processability. Fully aqueous processing methods without chemical additives and to avoid organic solvents are being actively developed. Issues related to charge trapping, such as high threshold voltage and low bias stress stability, can hinder the applications of these thin films. In this work, solution-processed In2O3 layers doped with MoO3 were prepared to study the tunability of the electrical performance characteristics such as charge carrier mobility, threshold voltage, and subthreshold swing. The doping was found to sufficiently change the oxygen content of the film while only minimally affect the film morphology. Using the optimal 0.49 mol % MoO3 content, the threshold voltage of the device with pristine In2O3 was reduced from 10 to 4 V, and bias stability improved by more than 50% under negative voltages and by 25% under positive voltages. A resistive load inverter was fabricated to demonstrate device applicability. This study demonstrates the tunability of metal oxide thin films prepared by an aqueous route with sub-1% doping.

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Section: Resultsmentioning

confidence: 99%

Doping of Indium Oxide Semiconductor Film Prepared Using an Environmentally Friendly Aqueous Solution Process with Sub-1% Molybdenum to Improve Device Performance and Stability

Tarsoly

Lee

Heo

et al. 2023

ACS Appl. Electron. Mater.

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Comparative Study of Indium Oxide Films for High‐Mobility TFTs: ALD, PLD and Solution Process

Guo,

Wu,

et al. 2024

Adv Elect Materials

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Deposition of indium oxide base films for high‐mobility thin film transistors (TFTs) has been an important part in the implementation of high‐resolution and high‐frequency display back panels. In this study, three types of In2O3 (InO) films have been fabricated for TFTs using atomic layer deposition (ALD), pulsed laser deposition (PLD), and solution process, respectively. ALD‐derived InO films show controllable grain formation and optimized TFTs show the field effect mobility of ≈100 cm2 V−1s−1 in both the conventional transistor measurements and critical four‐probe measurements, reaching the level of low‐temperature polycrystalline silicon (LTPS). Combined spectroscopy investigations show that the ALD‐derived InO film features advantages as compared to those of the PLD‐deposited and solution‐processed InO film in providing a smoother surface morphology, good crystallinity, and more orderly atomic growth mode. Moreover, the bias‐stress stability of ALD‐derived TFTs can be improved with further passivation.

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Monolithic n‐Type Metal–Oxide–Semiconductor Inverter Integrated Circuits Based on Wide and Ultrawide Bandgap Semiconductors

Chettri,

Mainali,

Xiao

et al. 2024

Physica Status Solidi (b)

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Wide bandgap (WBG) and ultrawide bandgap (UWBG) semiconductors in n‐type metal–oxide–semiconductor (n‐MOS) integrated circuits (ICs) are increasingly being explored for their potential applications in the rapidly developing field of electronics. This review comprehensively examines the role of n‐MOS inverters underpinned by WBG and UWBG semiconductors and their application possibilities. It delves into various n‐MOS inverter topologies, including resistive, enhancement or diode‐load, depletion‐load, and pseudo‐complementary MOS inverter topologies. Each topology's operational principles, unique advantages, and potential performance are elucidated in detail. Finally, these topologies are simulated using the Advanced Design System software for a fair comparison between various topologies. The literature and simulation results show that the pseudo‐D topology has the best gain and improved noise margin. The review methodology involves an extensive exploration of WBG/UWBG n‐MOS inverters to advance the current understanding of WBG/UWBG n‐MOS‐based ICs.

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High performance enhancement-mode thin-film transistor with graphene quantum dot-decorated In₂O₃ channel layers

Abstract: Due to the quantum confinement and edge effects, there has been ongoing enthusiasm to provide deep insight into graphene quantum dots (GQDs), serving as attractive semiconductor materials.

Cited by 5 publications

References 69 publications

Doping of Indium Oxide Semiconductor Film Prepared Using an Environmentally Friendly Aqueous Solution Process with Sub-1% Molybdenum to Improve Device Performance and Stability

Doping of Indium Oxide Semiconductor Film Prepared Using an Environmentally Friendly Aqueous Solution Process with Sub-1% Molybdenum to Improve Device Performance and Stability

Comparative Study of Indium Oxide Films for High‐Mobility TFTs: ALD, PLD and Solution Process

Monolithic n‐Type Metal–Oxide–Semiconductor Inverter Integrated Circuits Based on Wide and Ultrawide Bandgap Semiconductors

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High performance enhancement-mode thin-film transistor with graphene quantum dot-decorated In2O3 channel layers

Abstract: Due to the quantum confinement and edge effects, there has been ongoing enthusiasm to provide deep insight into graphene quantum dots (GQDs), serving as attractive semiconductor materials.

Cited by 5 publications

References 69 publications

Doping of Indium Oxide Semiconductor Film Prepared Using an Environmentally Friendly Aqueous Solution Process with Sub-1% Molybdenum to Improve Device Performance and Stability

Doping of Indium Oxide Semiconductor Film Prepared Using an Environmentally Friendly Aqueous Solution Process with Sub-1% Molybdenum to Improve Device Performance and Stability

Comparative Study of Indium Oxide Films for High‐Mobility TFTs: ALD, PLD and Solution Process

Monolithic n‐Type Metal–Oxide–Semiconductor Inverter Integrated Circuits Based on Wide and Ultrawide Bandgap Semiconductors

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High performance enhancement-mode thin-film transistor with graphene quantum dot-decorated In₂O₃ channel layers