High Performance Etching Process for Organic Films using SO<sub>2</sub>/O<sub>2</sub> Plasma

Ohkuni, M.; Kugo, S.; Sasaki, Tomoyuki; Tateiwa, K.; Nikoh, H.; Matsuo, Takahiro; Kubota, Masafumi

doi:10.1143/jjap.37.2369

Cited by 6 publications

(3 citation statements)

References 7 publications

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“…In this step, it is known that oxygen radicals and ions mainly etch photo resist and organic BARC material. 6) Oxygen ions have anisotropic etching characteristic, and cut the footing of photo resist during organic BARC etching. According to this etching characteristic, it was expected that CD bias is more negative in narrow DICD space region where larger footing of photo resist patterns exists.…”

Section: Organic Barc Etchmentioning

confidence: 99%

Improvement of Pattern-to-Pattern Critical Dimension Variation by Model Based Method in Gate Polycrystalline Silicon Etching Process

Tamura¹,

Yoshioka²,

Ohmori³

et al. 2009

Jpn. J. Appl. Phys.

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In this study, we investigated the dependence of critical dimension (CD) bias on pattern dimension (width, space and pitch) in detail and quantitatively in gate etch process. The mechanism of CD bias dependence was estimated from the characteristic of each etching step. Based on the etching mechanism, the numerical model was generated by using linear combination of functions of pattern dimension which have strong correlation to CD bias dependence. For the purpose of improving the pattern-to-pattern gate CD variation, the correction of line width of mask was carried out to compensate CD bias dependence by using this model. This model accurately predicted CD bias dependence, and pattern-to-pattern CD variation was improved in gate etch process successfully.

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Section: Organic Barc Etchmentioning

confidence: 99%

Improvement of Pattern-to-Pattern Critical Dimension Variation by Model Based Method in Gate Polycrystalline Silicon Etching Process

Tamura¹,

Yoshioka²,

Ohmori³

et al. 2009

Jpn. J. Appl. Phys.

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“…We could achieve residue-free and nearly vertical dry developed profile of 0.16 iin pattern using a high density plasma reacter, LAM TCP 9400. Many factors have been found to affect the dry developed resist profile and CD control [15]. Figure 9 presents the results of the 02 RIE image transfer to a hard baked DUV bottom ARC underlayer.…”

Section: Dry Development Of Blr Processmentioning

confidence: 99%

Improvement of resist profile roughness in bilayer resist process

Jeong

Ryu

Park

et al. 2000

Advances in Resist Technology and Processing XVII

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The bi -layer resist (BLR) process, which first accomplish imaging on a thin top layer and transfer it down to a thick organic layer, is one of newly emerging patterning techniques in silicon processing. In this work, we studied the lithographic performance ofthe BLR process adopting FK -SPTM (Fujifilm Olin Co.) as top layer material and various organic material as bottom layer. Generally, considerable advantages of planarization, reduced substrate reflection, improved process latitude, and of enhanced resolution are achieved. However, the resolution and the process latitude are highly affected by surface interaction between the top resist and the bottom material. Moreover, the BLR process has a sidewall roughness problem related to the material factors of the resist and the degraded aerial image contrast, which can affect the reliability of the device. We found that thermal curing treatment applied after development with the consideration of the glass transition temperature are very effective in reducing the line edge roughness. More smooth and steep patterning is achieved by the thermal treatment. The linewidth controllability is below lOnm and the k1 value is reduced from 0.5 down to 0.32 in this process. The reactive ion etching adopting 02 gas demonstrated selectivity ofthe top resist over bottom material more than 15 : 1 , together with residue-free and vertical wall profile

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“…In general, oxygen plasmas give higher rates of removal of the organic resist and higher etching selectivities than polysilicon and oxides. In most cases, a vertical profile is obtained by adding a second constituent that is known for the formation of passivating layers, such as a halogen-containing gas, to protect the sidewalls. , It has been reported that N 2 , He, CHF 3 , Cl 2 , , HBr, , and SO 2 , gases are effective for the dry etching of resists.…”

Section: Introductionmentioning

confidence: 99%

Photoresist Trimming in Oxygen-Based High-Density Plasmas: Effect of HBr and Cl₂Addition to CF₄/O₂Mixtures

Sin

Chen

Loh³

et al. 2003

Ind. Eng. Chem. Res.

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The effects of HBr or Cl 2 addition to CF 4 /O 2 plasmas on resist trimming were examined. Because the reactivity of halogens on trimming decreases from F to Br and then to Cl, the addition of HBr and Cl 2 to CF 4 /O 2 decreases the trim rate. In contrast, the etch selectivity of the resist to the underlying polysilicon and the trim-rate uniformity are generally improved with the addition of enough HBr to CF 4 /O 2 , whereas addition of Cl 2 has the opposite effect in that it degrades the selectivity and uniformity. The constituents of the resist sidewall in different plasma etchants with HBr or Cl 2 gas added to CF 4 /O 2 were examined using angle-resolved XPS to study how the trim rate is influenced by the sidewall films formed during resist trimming. The XPS results showed that the films formed on the resist sidewall had different constituents and concentrations according to the plasma chemistry. CO x Br y F z and CO x Cl y F z films were formed on the resist sidewall during trimming with HBr/CF 4 /O 2 and Cl 2 /CF 4 /O 2 , respectively. The presence of halogen in the plasma affects the availability of the oxygen atom to the resist surface. A greater atomic concentration ratio of oxygen to carbon and a higher degree of halogenation of the films coincide with a higher trim rate.

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High Performance Etching Process for Organic Films using SO₂/O₂ Plasma

Cited by 6 publications

References 7 publications

Improvement of Pattern-to-Pattern Critical Dimension Variation by Model Based Method in Gate Polycrystalline Silicon Etching Process

Improvement of Pattern-to-Pattern Critical Dimension Variation by Model Based Method in Gate Polycrystalline Silicon Etching Process

Improvement of resist profile roughness in bilayer resist process

Photoresist Trimming in Oxygen-Based High-Density Plasmas: Effect of HBr and Cl₂Addition to CF₄/O₂Mixtures

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High Performance Etching Process for Organic Films using SO2/O2 Plasma

Cited by 6 publications

References 7 publications

Improvement of Pattern-to-Pattern Critical Dimension Variation by Model Based Method in Gate Polycrystalline Silicon Etching Process

Improvement of Pattern-to-Pattern Critical Dimension Variation by Model Based Method in Gate Polycrystalline Silicon Etching Process

Improvement of resist profile roughness in bilayer resist process

Photoresist Trimming in Oxygen-Based High-Density Plasmas: Effect of HBr and Cl2Addition to CF4/O2Mixtures

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High Performance Etching Process for Organic Films using SO₂/O₂ Plasma

Photoresist Trimming in Oxygen-Based High-Density Plasmas: Effect of HBr and Cl₂Addition to CF₄/O₂Mixtures