2023
DOI: 10.3390/bios13050516
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High-Performance FET-Based Dopamine-Sensitive Biosensor Platform Based on SOI Substrate

Abstract: Dopamine is a catecholamine neurotransmitter that plays a significant role in the human central nervous system, even at extremely low concentrations. Several studies have focused on rapid and accurate detection of dopamine levels using field-effect transistor (FET)-based sensors. However, conventional approaches have poor dopamine sensitivity with values <11 mV/log [DA]. Hence, it is necessary to increase the sensitivity of FET-based dopamine sensors. In the present study, we proposed a high-performance dop… Show more

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Cited by 4 publications
(2 citation statements)
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“…To address these challenges, we propose an alternative dual-gate field-effect transistor (DG-FET)-based BSA-detection biosensor platform. To enhance its detection capabilities, we utilized a dual-gate (DG) structure and capacitive coupling effects [ 26 , 27 , 28 , 29 , 30 , 31 ]. The capacitive coupling effect is determined by the capacitance ratio between the top-gate (TG) oxide and the bottom-gate (BG) oxide and achieves high sensitivity without requiring additional circuits, owing to its inherent amplification effect.…”
Section: Introductionmentioning
confidence: 99%
“…To address these challenges, we propose an alternative dual-gate field-effect transistor (DG-FET)-based BSA-detection biosensor platform. To enhance its detection capabilities, we utilized a dual-gate (DG) structure and capacitive coupling effects [ 26 , 27 , 28 , 29 , 30 , 31 ]. The capacitive coupling effect is determined by the capacitance ratio between the top-gate (TG) oxide and the bottom-gate (BG) oxide and achieves high sensitivity without requiring additional circuits, owing to its inherent amplification effect.…”
Section: Introductionmentioning
confidence: 99%
“…To detect small molecules of analytes, like DA, several solid-state devices were developed. The first representative was the Ion-Sensitive Field-Effect Transistor (ISFET) [ 35 ]. Then these successively followed: electrolyte-insulator-semiconductor (EIS) [ 36 ], organic thin film transistor (OTFT) [ 37 ], Organic Electrochemical Transistor (OECT) [ 38 ], and extended-gate field-effect transistor (EGFET) [ 39 ].…”
Section: Introductionmentioning
confidence: 99%