High performance flexible multilevel optical memory based on a vertical organic field effect transistor with ultrashort channel length

Abstract

Optical memory based on a vertical organic field effect transistor with ultrashort channel length exhibits excellent device performance with distinct storage levels.

High‐Performance All‐Inorganic Perovskite‐Quantum‐Dot‐Based Flexible Organic Phototransistor Memory with Architecture Design

“…Materials : Poly[2,5‐bis(alkyl)pyrrolo[3,4‐c]pyrrole‐1,4(2H,5H)‐dione‐alt‐5,5′‐di(thiophen‐2‐yl)‐2,2′‐(E)‐2‐(2‐(thiophen‐2‐yl)vinyl)‐thiophene](PDVT‐8) ( M w = 50K, PDI = 2.4) was purchased from 1‐Materials . PDVT‐8 was dissolved in chloroform at 55 °C for 2 h with a concentration of 10 mg mL −1 .…”

Multilevel storage and photoinduced-reset memory by an inorganic perovskite quantum-dot/polystyrene floating-gate organic transistor

“…In the past two decades, non-volatile memory based on organic eld-effect transistors (OFETs) has attracted much attention due to its merits of non-destructive read-out, light weight, easy processing, low fabrication cost and strong compatibility with current integrated circuit process. [1][2][3] Among various types of OFET memory, the oating-gate OFET memory (FGOFETM) is considered as a candidate for the next generation organic ash memory due to tunable oating-gate for device sizing, low temperature solution-processability, fast data storage and viabilities of device fabrication on exible substrates. 4,5 Compared to traditional oating gate, the composite lm, monodispersed nanoparticles (NPs) or quantum dots (QDs) impregnated in a dielectric polymer, as a oating gate layer has following advantages: [6][7][8] (1) the oating gate layer can be prepared by a simple and highly effective solution process method; (2) the morphology and nano-oating gate structure can be controlled by adjusting the mixing ratio of nanoparticles materials and polymers, therefore improving the OFET memory performance; (3) the memory devices have higher lm uniformity and lower gate leakage.…”

“…9 Owing to the above advantages, the FGO-FETMs based on NPs or QDs/polymer composite lm can obtain large memory window, high memory on/off ratio and enhanced memory data retention, which is suitable for practical multilevel storage. 10 It is challenging but rewarding to realize multilevel organic memory due to: (1) internet of things (IoT), the demand for information storage is ever-increasing to meet the demands of articial intelligence and machine learning; (2) Moore's law approaches the physical limit, thus it is urgent to further increase storage density for larger memory space; 3,11 (3) the size of memory device is limited by the precision of the photolithography process, which makes it difficult to further reduce the size of each memory cell. Currently, it is a hot topic to explore the use of multilevel memory devices instead of single-level memory devices to achieve high-density data storage performance.…”

“…Currently, it is a hot topic to explore the use of multilevel memory devices instead of single-level memory devices to achieve high-density data storage performance. 3,8,[12][13][14][15] However, the capability of storing multilevel information is one of the biggest challenges in memory technologies. 5,10,11,[15][16][17] Thus, there is an urgent demand to search for suitable NPs/QDs and organic semiconductor (OSC) channel materials for highly efficient, multilevel and endurable OFET memory devices.…”

Heterojunction Channels in Oxide Semiconductors for Visible‐Blind Nonvolatile Optoelectronic Memories

“…Recently, optoelectronic memories have been reported in a wide range of potential materials, including 2D materials [1][2][3][4][5][6][7] and organic semiconductors, [8][9][10][11][12] or through the adoption of nanostructures. [13][14][15][16][17] Compared with traditional memory devices two/three terminal devices are further expanding their applications and can be seen in fields including photodetectors, [24][25][26] gas sensors, [27][28][29] biosensors, [30] floating gate memory, [31] and resistive random access memory (RRAM). [32] Nevertheless, in these applications, there has been no breakthrough in the ability to store information in forms other than electrical signals.…”