High-performance flexible nanoscale transistors based on transition metal dichalcogenides

Abstract

Two-dimensional (2D) semiconducting transition metal dichalcogenides (TMDs) are good candidates for high-performance flexible electronics. However, most demonstrations of such flexible field-effect transistors (FETs) to date have been on the micron scale, not benefitting from the short-channel advantages of 2D-TMDs. Here, we demonstrate flexible monolayer MoS2 FETs with the shortest channels reported to date (down to 50 nm) and remarkably high on-current (up to 470 µA µm -1 at 1 V drain-to-source voltage) which is comparable to flexible graphene or crystalline silicon FETs. This is achieved using a new transfer method wherein contacts are initially patterned on the rigid TMD growth substrate with nanoscale lithography, then coated with a polyimide (PI) film which becomes the flexible substrate after release, with the contacts and TMD. We also apply this transfer process to other TMDs, reporting the first flexible FETs with MoSe2 and record on-current for flexible WSe2 FETs. These achievements push 2D semiconductors closer to a technology for low-power and high-performance flexible electronics.For several years, the "Internet-of-Things" (IoT) has been increasingly prevalent in the forecast of future electronics. From monitoring the environment and machines around us to the human body, IoT envisions electronics physically present in every aspect of our daily lives. While some devices may be realized on rigid silicon, there is a need for electronics with new non-planar form factors 1,2 , which are thin and light, and can be conformally attached to objects with unusual shapes, on the human skin, or even implanted into the human body 1 . With these applications in mind, we need to realize electronics on flexible substrates that are robust to mechanical strain, easy to integrate, and capable of low-power consumption and high performance at the nanoscale 2,3 .Recent studies have suggested that 2D materials are good candidates for flexible substrates, because of their lack of dangling bonds, good carrier mobility in atomically thin (sub-1 nm) layers, reduced

Layered post-transition-metal dichalcogenide SnGe2N4 as a promising photoelectric material: a DFT study

“…[1][2][3][4][5][6][7][8] As a result, several two-dimensional structures, including MoS 2 /SiC heterostructures, PdSeO 3 monolayers, COFs, AgBiP 2 Se 6 monolayers, phosphorene nanoribbons, and carbon-doped BN nanosheets, have been demonstrated to be ideal for solar energy conversion and photocatalysis. [9][10][11][12][13][14] Other 2D materials, such as MoS 2 , hexagonal-BN, WSe 2 -MoS 2 , MoSe 2 , WSe 2 , and hybrid 2D material heterostructures, are also very promising for the next generation of transistors, [15][16][17][18][19][20] allowing for the miniaturization and integration of nano-electronic devices.…”

Novel two-dimensional transition metal chalcogenides created by epitaxial growth

“…PtSe 2 is promising as a catalyst for hydrogen evolution reaction [100], and also shows promise for infrared detection [101]. MoSe 2 can be used to build high-performance flexible nanoscale transistors [102]. PdSe 2 is a potential candidate for constructing nonlinear optoelectronic devices [103] and photodetectors [104,105].…”

Hybrid Thin-Film Materials Combinations for Complementary Integration Circuit Implementation

“…The structural specificity produces superior electrical and optical properties, and induces a sharp contact condition with other materials [52,53]. Moreover, because of their excellent mechanical properties such as flexibility and rigidity, 2D materials have attracted a lot of attention as potential candidates for various applications such as field-effect transistors (FET) [54,55], gas sensors [56], photo sensors [57,58] and flexible or ubiquitous substrates [59,60]. The information of electrical properties and structure dimension of 2D TMD materials was tabulated in Table 1.…”