High-performance flexible pentacene transistor memory with PTCDI-C₁₃ as N-type buffer layer

Abstract

Flexible organic field-effect transistor nonvolatile memories (OFET-NVMs) with polymer electrets have aroused great attention for its important role in next-generation flexible data storage devices application. However, the OFET-NVMs to date still hardly reach the requirements for practical applications. In air environment, the positively charged defects formed in pentacene near the interface with polymer, result in unsatisfied high programming/erasing (P/E) voltages. Here, we propose an OFET memory structure, in which an n-type semiconductor N, N’-Bis(3-pentyl) perylene-3, 4, 9, 10-bis(dicarboximide) (PTCDI-C13) is inserted between pentacene and poly(4-vinyl phenol (PVN). Based on the electrostatic induction effect, electrons are induced on the surface of PTCDI-C13 due to the electrostatic field generated by the positive charges at the interface of pentacene/polymer, and compensate part of the positive charges at the interface, resulting in the reduction of the height of hole-barrier. The flexible memory device with PTCDI-C13 exhibits a memory window of larger than 7 V at low P/E voltages (±20 V), fast switching speeds (0.5 ms), good P/E endurance (> 400 cycles), large field-effect mobility (0.026 cm2·V-1·s-1), and long retention time (over 104 s).

Nanoscale Morphology of the PTCDI-C13/PMMA Interface: An Integrated Molecular Dynamics and Atomic Force Microscopy Approach

“…In this work, we perform computational studies and experimental validations to assess the nanoscale aggregation in thin-films of a well-assessed and multifunctional semiconducting n-type organic small-molecule, namely the perylene diimide derivative N , N ′-ditridecylperylene-3,4,9,10-tetracarboxylic diimide (PTCDI-C13), ,− at the interface with poly-methyl metacrylate (PMMA), a polymer typically used as a dielectric layer, ,,− in different growth and fabrication conditions, thus mimicking the configuration occurring in in-plane organic electronic devices, such as organic field-effect transistors (OFETs). Previous work indeed demonstrated that the charge transport properties and the overall performance of organic transistors depend crucially on the morphology of the active organic layer at the interface with the dielectric layer .…”

Charge-Localized Retention and Long-Term Memory Enabled by Cooperating Sterically Confined Molecular Crystallization with Spiro[fluorene-9,9′-xanthene]-Based Csp3-Hindrance

“…Charge trapping memory based on organic memory material has shown promising application prospects in the next generation of data storage devices, artificial synapses, and neurons as well as neuromorphic computing due to their tunable molecular and electronic structure, low cost, environmentally friendliness, and ability to be prepared in large areas in flexible electronics. − Designing and exploring the charge-memorable material with good stability, high-density, high-speed, and long retention are essential ways to improve charge trapping memory. Recently, some charge trapping elements have been developed.…”