High-Performance Flexible ${\rm Ni}/{\rm Sm}_{2}{\rm O}_{3}/{\rm ITO}$ ReRAM Device for Low-Power Nonvolatile Memory Applications

Mondal, Somnath; Chueh, C.-H.; Pan, Tung-Ming

doi:10.1109/led.2013.2272455

Cited by 22 publications

(14 citation statements)

References 18 publications

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“…Besides the common perks of flexible electronics, and hence memories, ranging from portable, lightweight, stylish designs, and conformal ability consumer electronics to biomedical applications, flexible memristors would not only support these functionalities but also provide a feasible route for mimicking our brain's cortex structure. Key works on flexible memristors can be classified into four main categories: organic memristors on organic substrates [81,86,87,[200][201][202][203][204][205], inorganic resistive memories on silicon transferred to organic substrates [27,206], inorganic memristors deposited at low temperatures on plastic organic substrates [78,[207][208][209][210][211][212][213][214][215][216][217], and inorganic memristors on flexed silicon using the etch-protect-release approach [218]. In addition, interesting work using inorganic flexible substrate (Al foil) with organic cellulose nanofiber paper enabled achieving the lowest reported bending radius for ReRAM (0.35 mm) and lowest operating voltage (±0.5 V) [219].…”

Section: Flexible Rerammentioning

confidence: 99%

Review on Physically Flexible Nonvolatile Memory for Internet of Everything Electronics

2015

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Solid-state memory is an essential component of the digital age. With advancements in healthcare technology and the Internet of Things (IoT), the demand for ultra-dense, ultra-low-power memory is increasing. In this review, we present a comprehensive perspective on the most notable approaches to the fabrication of physically flexible memory devices. With the future goal of replacing traditional mechanical hard disks with solid-state storage devices, a fully flexible electronic system will need two basic devices: transistors and nonvolatile memory. Transistors are used for logic operations and gating memory arrays, while nonvolatile memory (NVM) devices are required for storing information in the main memory and cache storage. Since the highest density of transistors and storage structures is manifested in memories, the focus of this review is flexible NVM. Flexible NVM components are discussed in terms of their functionality, performance metrics, and reliability aspects, all of which are critical components for NVM technology to be part of mainstream consumer electronics, IoT, and advanced healthcare devices. Finally, flexible NVMs are benchmarked and future prospects are provided.

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Section: Flexible Rerammentioning

confidence: 99%

Review on Physically Flexible Nonvolatile Memory for Internet of Everything Electronics

2015

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“…As a result of this interest, there are an increasing number of technological applications that rely upon rare earth oxides (REO) and the related rare earth complex oxides. The focus of this work, Sm 2 O 3 , has shown great promise in applications as diverse as a high-k dielectric [1,2,3,4,5,6], ReRAM dielectric [7,8,9,10], catalyst [11,12,13], sensors [14,15], and as a dopant in a number of optically important glasses [16,17,18].…”

Section: Introductionmentioning

confidence: 99%

“…The most promising electronic device applications for Sm 2 O 3 have been found in metal-oxide-semiconductor (MOS) and ReRAM devices. [1,2,3,4,5,6,7,8,9,10] Historically, silicon dioxide (SiO 2 ) has been employed as a gate oxide layer on silicon substrate for reasons of both performance and ease of processing. The miniaturization of devices has driven the need for high-k dielectrics, physically thicker layers with the same electrical equivalent thickness.…”

Section: Introductionmentioning

confidence: 99%

Structural, elastic, vibrational and electronic properties of amorphous Sm2O3 from Ab Initio calculations

Olsson

Cai

Cottom

et al. 2019

Computational Materials Science

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Rare earth oxides have shown great promise in a variety of applications in their own right, and as the building blocks of complex oxides. A great deal of recent interest has been focused on Sm 2 O 3 , which has shown significant promise as a high-k dielectric and as a ReRAM dielectric. Experimentally, these thin films range from amorphous, through partially crystalline, to poly-crystalline, dependent upon the synthetic conditions. Each case presents a set of modelling challenges that need to be defined and overcome. In this work, the problem of modelling amorphous Sm 2 O 3 is tackled, developing an atomistic picture of the effect of amorphization on Sm 2 O 3 from a structural and electronic structure perspective.

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“…Exploratory research in flexible electronics is rising with new application opportunities [1][2][3][4][5][6]. The main challenge lies in an industry acceptable process for flexible electronics.…”

Section: Introductionmentioning

confidence: 99%

CMOS compatible fabrication of flexible and semi-transparent FeRAM on ultra-thin bulk monocrystalline silicon (100) fabric

Ghoneim

Hanna

Hussain

2014

14th IEEE International Conference on Nanotechnology

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Commercialization of flexible electronics requires reliable, high performance, ultra-compact and low power devices. To achieve them, we fabricate traditional electronics on bulk mono-crystalline silicon (100) and transform the top portion into an ultra-thin flexible silicon fabric with prefabricated devices, preserving ultra-large-scale-integration density and same device performance. This can be done in a cost effective manner due to its full compatibility with standard CMOS processes. In this paper, using the same approach, for the first time we demonstrate a ferroelectric random access memory (FeRAM) cell on flexible silicon fabric platform and assess its functionality and practical potential.

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High-Performance Flexible ${\rm Ni}/{\rm Sm}_{2}{\rm O}_{3}/{\rm ITO}$ ReRAM Device for Low-Power Nonvolatile Memory Applications

Cited by 22 publications

References 18 publications

Review on Physically Flexible Nonvolatile Memory for Internet of Everything Electronics

Review on Physically Flexible Nonvolatile Memory for Internet of Everything Electronics

Structural, elastic, vibrational and electronic properties of amorphous Sm2O3 from Ab Initio calculations

CMOS compatible fabrication of flexible and semi-transparent FeRAM on ultra-thin bulk monocrystalline silicon (100) fabric

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