High-Performance Free-Standing Flexible Photodetectors Based on Sulfur-Hyperdoped Ultrathin Silicon

Jin, Xiaorong; Sun, Yueming; Wu, Qiang; Jia, Zhenhong; Huang, Song; Yao, Jing; Huang, Hui; Xu, Jingjun

doi:10.1021/acsami.9b16667

Cited by 37 publications

(18 citation statements)

References 54 publications

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“…However, for a specially designed material, difficulties remain regarding fully explaining the physical mechanism of particular properties such as the asymmetric photoresponse between the forward and reverse bias, the extended infrared response, and extremely high EQE. It could depend on the impurity energy levels introduced by the sulfur atoms or the assistance of trap states, attributed to the ultrafast and extremely strong interaction between femtosecond laser and materials, which results in nonthermal melting and the fast resolidification of materials. These effects lead to complexity in the process of photoconductive gain such as the high‐density interaction of electrons and holes, the interaction of electrons and phonons, and exciton‐polariton.…”

Section: Resultsmentioning

confidence: 99%

Black Silicon Photodetector with Excellent Comprehensive Properties by Rapid Thermal Annealing and Hydrogenated Surface Passivation

Huang

Jia

et al. 2020

Advanced Optical Materials

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Silicon‐based photodetectors show attractive prospects due to their convenient preparation, high detectivity, and complementary metal–oxide–semiconductor compatibility. However, they are currently limited by low responsivity and sharp decay at sub‐bandgap wavelength. Although the aforementioned limitation can be partly solved by femtosecond laser processing, the surface defects and carrier activation rates result in a large dark current and narrow spectral response, which are unsatisfactory. Herein, rapid thermal annealing and hydrogenated surface passivation are introduced to elevate the broad‐bandgap responsivity and signal to noise ratio and to suppress the dark current. At optimal conditions, a sub‐bandgap responsivity of 0.80 A W−1 for 1550 nm at 20 V at room temperature is obtained, comparable with commercial germanium photodiodes and much higher than previously reported silicon photodiodes. Moreover, the prepared photodetector responded to spectral range from 400 to 1600 nm, with responsivity reaching 1097.60 A W−1 for 1080 nm at 20 V, which is the highest in reported silicon photodetectors. Simultaneously, the device shows competitive detectivity (1.22 × 1014 Jones at −5 V) due to the post‐processing procedures and suppressed dark current (7.8 μA at −5 V). The results show great prospects for black silicon in infrared light detection, night vision imaging, and fiber‐optic communication.

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Section: Resultsmentioning

confidence: 99%

Black Silicon Photodetector with Excellent Comprehensive Properties by Rapid Thermal Annealing and Hydrogenated Surface Passivation

Huang

Jia

et al. 2020

Advanced Optical Materials

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“…Fabrication techniques based on femtosecond lasers have been studied by researchers to address the various challenges encountered in the manufacturing of high-performance, versatile, and durable devices, as shown in Table IV. Flexible photodetectors consisting of micro/nanostructures were fabricated by femtosecond laser irradiation on silicon-based materials in an SF6 atmosphere [62]. The devices exhibited high responsiveness over a wide range of wavelengths owing to their high light absorption efficiency, which was attributable to the etched micro/nanostructures, as shown in Figure 5(b,i).…”

Section: F Manufacturing and Applications Of Flexible Electronic Devicesmentioning

confidence: 99%

Recent Advances in Femtosecond Laser Fabrication: From Structures to Applications

Wen¹,

Yu²,

Zhang³

et al. 2021

IEEE Open J. Nanotechnol.

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Femtosecond laser processing is fast becoming a pervasive method for fabricating micro/nanostructures because it can be used to produce micro/nanostructures on myriads of materials with high precision and resolution, requires little control over environmental conditions, and is simple to implement. Here, we review recent developments in the use of femtosecond lasers for the fabrication of micro/nanostructures through ablation and two-photon polymerization (TPP). Moreover, the applications of some of the fabricated micro/nanostructures are also discussed. We highlight the advantages of femtosecond laser processing by explaining the underlying principles of laser ablation and TPP. We also show the use of this method to fabricate new devices with outstanding performance in several application realm, such as sensors, optical devices, microfluidic chips, and soft robotics.

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“…Especially, the transition metal dichalcogenide (TMDCs) based on organic substrate, such as MoS 2 on PET, WSe 2 or MoS 2 /WSe 2 on paper, provide advanced flexible visible detectors with high responsivity and quantum efficiency, the preparation scheme has low cost and large device preparation area. Moreover, broadband photodetection has been achieved in TMDCs 18 , 36 , IGZO 37 and Si-based material 38 , which enhances the absorption of light by the decoration on surface with dissimilar superstructure or nanostructure. However, the flexible photodetection realized with above material is able to covers UV, Vis and NIR, but has no response to short-wave infrared (SWIR).…”

Section: Introductionmentioning

confidence: 99%

High performance visible-SWIR flexible photodetector based on large-area InGaAs/InP PIN structure

Zhang

Chen

et al. 2022

Sci Rep

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Mechanically flexible optoelectronic devices and systems can enable a much broader range of applications than what their rigid counterparts can do, especially for novel bio-integrated optoelectronic systems, flexible consumer electronics and wearable sensors. Inorganic semiconductor could be a good candidate for the flexible PD when it can keep its high performance under the bending condition. Here, we demonstrate a III–V material-based flexible photodetector operating wavelength from 640 to 1700 nm with the high detectivity of 5.18 × 1011 cm‧Hz1/2/W and fast response speed @1550 nm by using a simply top-to-down fabrication process. The optoelectrical performances are stable as the PDs are exposed to bending cycles with a radius of 15 mm up to 1000 times. Furthermore, the mechanical failure mode of the PD is also investigated, which suggests that the cracking and delamination failure mode are dominant in bending up and bending down direction, respectively. Such a flexible III–V material-based PD and design with stable and high performance could be a promising strategy for the application of the flexible broad spectrum detection.

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High-Performance Free-Standing Flexible Photodetectors Based on Sulfur-Hyperdoped Ultrathin Silicon

Cited by 37 publications

References 54 publications

Black Silicon Photodetector with Excellent Comprehensive Properties by Rapid Thermal Annealing and Hydrogenated Surface Passivation

Black Silicon Photodetector with Excellent Comprehensive Properties by Rapid Thermal Annealing and Hydrogenated Surface Passivation

Recent Advances in Femtosecond Laser Fabrication: From Structures to Applications

High performance visible-SWIR flexible photodetector based on large-area InGaAs/InP PIN structure

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