1989
DOI: 10.1116/1.584761
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High-performance GaAs/AlGaAs graded refractive index separate confinement heterostructure lasers grown by molecular-beam epitaxy on Si3N4 masked substrates

Abstract: Strainedlayer InGaAsGaAsAlGaAs gradedindex separate confinement heterostructure single quantum well lasers grown by molecular beam epitaxy Appl.Lowthreshold interruptedgrowth stepindex separateconfinement heterostructure GaAs/(Al,Ga)As lasers grown by molecularbeam epitaxy

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