Low-threshold GaAs/AlGaAs lasers have, for the first time, been grown selectively on 10 μm stripe openings patterned in oxide on Si substrates. Lateral current confinement provided by side facets reduces edge leakage, and results in threshold currents as low as 75 mA for a 10 μm by 210 μm device, a nearly two-fold improvement over comparable etched ridge waveguide lasers. Spectrum measurements show single longitudinal mode emission near 850 nm. This adaptation of selective heteroepitaxial growth for lateral current confinement of AlGaAs/GaAs lasers on Si substrates, adopted from similar work on GaAs substrates, offers potential for significant threshold current reductions of lasers integrable with Si.