High-performance GaN-based light emitting diodes grown on 8-inch Si substrate by using a combined low-temperature and high-temperature-grown AlN buffer layer

Oh, Jin Seok; Youngjoo, Moon; Jang, Jung Hun; Eum, Jung Hyun; Sung, Youngje; Lee, Sang Youl; Song, Jun O.; Seong, Tae‐Yeon

doi:10.1016/j.jallcom.2017.10.200

Cited by 24 publications

(6 citation statements)

References 32 publications

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“…As Si is a decent reflector in the deep UV range 43 , 44 and highly electrical and thermal conductive, such a configuration could be a possible path of fabricating vertical AlGaN deep UV LEDs and offers a potential benefit of direct integration to other electronic components on Si. More importantly, due to the thickness of the AlN buffer layer is very thin, it can be removed easily by chemical wet etching, which is compatible with the fabrication process of vertical InGaN visible color LEDs on Si substrates 28 , 29 , 45 , 46 , allowing for the achievement of vertical AlGaN deep UV LEDs with ultimately high electrical and optical performance.…”

Section: Introductionmentioning

confidence: 99%

Vertical semiconductor deep ultraviolet light emitting diodes on a nanowire-assisted aluminum nitride buffer layer

Zhang

Parimoo

Martel

et al. 2022

Sci Rep

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Vertical light-emitting diodes (LEDs) have many advantages such as uniform current injection, excellent scalability of the chip size, and simple packaging process. Hitherto, however, technologically important semiconductor aluminum gallium nitride (AlGaN) deep ultraviolet (UV) LEDs are mainly through lateral injection. Herein, we demonstrate a new and practical path for vertical AlGaN deep UV LEDs, which exploits a thin AlN buffer layer formed on a nanowire-based template on silicon (Si). Such a buffer layer enables in situ formation of vertical AlGaN deep UV LEDs on Si. Near Lambertian emission pattern is measured from the top surface. The decent reflectivity of Si in the deep UV range makes such a configuration a viable low-cost solution for vertical AlGaN deep UV LEDs. More importantly, the use of such a thin AlN buffer layer can allow an easy transfer of device structures to other carrier wafers for vertical AlGaN deep UV LEDs with ultimately high electrical and optical performance.

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Section: Introductionmentioning

confidence: 99%

Vertical semiconductor deep ultraviolet light emitting diodes on a nanowire-assisted aluminum nitride buffer layer

Zhang

Parimoo

Martel

et al. 2022

Sci Rep

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“…Thin AlN film was most commonly used as a buffer layer, especially with a Si substrate. 8,[20][21][22] The AlN buffer layer worked as a blocking layer for suppression of unwanted interfacial layer formation and also as a seed layer for growth of 1D GaN nanostructures. [23][24][25][26][27] Reference 26 showed that the AlN buffer layer improves the alignment of GaN NWs on a Si (111) substrate.…”

Section: Introductionmentioning

confidence: 99%

Influence of surface nitridation and an AlN buffer layer on the growth of GaN nanostructures on a flexible Ti metal foil using laser molecular beam epitaxy

Ramesh

Tyagi

Gupta

et al. 2019

Jpn. J. Appl. Phys.

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GaN nanorods (NRs) and hollow nanocolumns (HNCs) were grown on flexible Ti foils using laser-assisted molecular beam epitaxy at a growth temperature of 700 °C. The shape, size and density of the GaN nanostructures were tuned by surface nitridation and AlN buffer layer growth temperature on a Ti foil. Sparse (∼ 5.5 × 108 cm−2) GaN NRs were obtained on the bare surface whereas dense (∼3.47 × 109 cm−2) GaN NRs were grown on the nitridated Ti foil. The shape of the GaN changed from NRs to HNCs by introducing an AlN buffer layer on nitridated Ti foil. Raman spectroscopy showed the grown GaN nanostructures have a wurtzite crystal structure. Room-temperature photoluminescence spectroscopy measurements show that the GaN nanostructures possess an intensive near band edge emission at ∼3.42 eV with a negligible defect-related peak. The growth of tunable GaN nanostructures on flexible metal foils is attractive for flexible optoelectronics and sensor devices.

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“…Основная проблема интеграции двух технологий -значительное рассогласование параметров кристаллических решеток и коэффициентов температурного расширения, что приводит к возникновению большого количества дефектов, неконтролируемым флуктуациям состава твердых растворов, отслаиванию и растрескиванию гетероструктур. Не менее важной проблемой в производстве мощных нитридных СВЧ-транзисторов является теплоотвод от приборов, рассеиваемая мощность которых составляет десятки ватт [1][2][3][4][5].…”

Section: Introductionunclassified

Characteristics of the formation and composition of AlxGa1-xN/AlN/por-Si/Si(111) heterostructures grown using a porous silicon buffer layer

Lenshin

Seredin

Zolotukhin

et al. 2022

kcmf

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In this work, we studied the efficiency of introducing nanoporous silicon as a buffer layer in the growth of AlxGa1–xN/AlN/Si(111) on a single-crystal silicon by molecular beam growth technology. We also considered its influence on the morphological characteristics and atomic composition of the surface layers of heterostructures. As determined by X-ray diffraction, microscopic, and X-ray photoelectron methods, the heterostructure grown on Si(111) n-type monocrystalline silicon wafer with nanoporous por-Si buffer layer has a more homogeneous epitaxial layer, and the surface morphology of the layer is also more homogeneous.

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High-performance GaN-based light emitting diodes grown on 8-inch Si substrate by using a combined low-temperature and high-temperature-grown AlN buffer layer

Cited by 24 publications

References 32 publications

Vertical semiconductor deep ultraviolet light emitting diodes on a nanowire-assisted aluminum nitride buffer layer

Vertical semiconductor deep ultraviolet light emitting diodes on a nanowire-assisted aluminum nitride buffer layer

Influence of surface nitridation and an AlN buffer layer on the growth of GaN nanostructures on a flexible Ti metal foil using laser molecular beam epitaxy

Characteristics of the formation and composition of AlxGa1-xN/AlN/por-Si/Si(111) heterostructures grown using a porous silicon buffer layer

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