2023
DOI: 10.1007/s00340-023-07988-y
|View full text |Cite
|
Sign up to set email alerts
|

High-performance graphene–PbS quantum dots hybrid photodetector with broadband response and long-time stability

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
1

Citation Types

0
1
0

Year Published

2023
2023
2024
2024

Publication Types

Select...
4
1

Relationship

0
5

Authors

Journals

citations
Cited by 5 publications
(1 citation statement)
references
References 27 publications
0
1
0
Order By: Relevance
“…PbS QDs have excellent light absorption properties and are often used to prepare high-performance photodetectors. Due to the significant quantum-limited effect of PbS QDs, their band gap can be easily sized to cover most of the short-wave infrared region [2] .Therefore, PbS QDs have become one of the best candidates for the fabrication of NIR optoelectronic devices by solution processing [3][4][5] . And ZnO QDs are gradually becoming the most widely used electron transport layer (ETL) because of their good electron affinity, high electron mobility, n-type conductivity and easy preparation by solution method [6] .The combination of narrow-bandgap PbS QDs and ZnO QDs with excellent electron transport properties is expected to achieve broad-band, high-performance photodetection.…”
Section: Introductionmentioning
confidence: 99%
“…PbS QDs have excellent light absorption properties and are often used to prepare high-performance photodetectors. Due to the significant quantum-limited effect of PbS QDs, their band gap can be easily sized to cover most of the short-wave infrared region [2] .Therefore, PbS QDs have become one of the best candidates for the fabrication of NIR optoelectronic devices by solution processing [3][4][5] . And ZnO QDs are gradually becoming the most widely used electron transport layer (ETL) because of their good electron affinity, high electron mobility, n-type conductivity and easy preparation by solution method [6] .The combination of narrow-bandgap PbS QDs and ZnO QDs with excellent electron transport properties is expected to achieve broad-band, high-performance photodetection.…”
Section: Introductionmentioning
confidence: 99%