High-performance HZO/InAlN/GaN MISHEMTs for Ka-band application

Abstract

This paper reports on the demonstration of microwave power performance at 30 GHz on InAlN/GaN metal-insulator-semiconductor high electron mobility transistor (MISHEMT) on silicon substrate by using the Hf0.5Zr0.5O2 (HZO) as a gate dielectric. Compared with Schottky gate HEMT (SG-HEMTs), the MISHEMT with a gate length (LG) of 50 nm presents a significantly enhanced performance with an ON/OFF current ratio (ION/IOFF) of 9.3 × 107, a subthreshold swing (SS) of 130 mV/dec, a low drain-induced barrier lowing (DIBL) of 45 mV/V, and a breakdown voltage of 35 V. RF characterizations reveal a current gain cutoff frequency (fT) of 155 GHz and a maximum oscillation frequency (fmax) of 250 GHz, resulting in high (fT×fmax)1/2 of 197 GHz and the record high Johnson’s figure-of-merit (JFOM = fT×BV) of 5.4 THz∙V among the reported GaN MISHEMTs on Si. The power performance at 30 GHz exhibits a maximum output power of 1.36 W/mm, a maximum power gain of 12.3 dB, and a peak power-added efficiency of 21%, demonstrating the great potential of HZO/InAlN/GaN MISHEMTs for the Ka-band application.