High performance InAs quantum dot lasers on silicon substrates by low temperature Pd-GaAs wafer bonding

Wang, Zihao; Yao, Ruizhe; Preble, Stefan F.; Lee, Chi-Sen; Lester, L. F.; Guo, Wei

doi:10.1063/1.4938205

Cited by 13 publications

(6 citation statements)

References 35 publications

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“…The implementation of the model in Equations (1)-(6), with the boundary conditions in Equations (9)- (14) and the additional parameter models in Equations 7, 8 Nowadays, a lot of problems in the field of computational electronics remains unsolved. In our opinion, the universal approach to the efficient implementation of the drift-diffusion models has not The model in Equations 29- 31is suitable for one-and two-dimensional non-stationary simulation of high-speed RCE photodetectors and takes into account the dynamics of photon propagation in the resonant cavity.…”

Section: Simulation Techniquesmentioning

confidence: 99%

“…The implementation of the model in Equations (1)-(6), with the boundary conditions in Equations (9)- (14) and the additional parameter models in Equations (7), (8), (15)- (31), requires the application of numerical methods.…”

Section: Simulation Techniquesmentioning

confidence: 99%

“…The main problem of silicon photonics is the development of on-chip optical radiation sources. This problem remains unsolved and causes the relevance of the design of hybrid A III B V -silicon systems [13][14][15] (A and B refer to group III and V semiconductors, respectively).…”

Section: Introductionmentioning

confidence: 99%

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Drift-Diffusion Simulation of High-Speed Optoelectronic Devices

Pisarenko

Ryndin

2019

Electronics

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In this paper, we address the problem of research and development of the advanced optoelectronic devices designed for on-chip optical interconnections in integrated circuits. The development of the models, techniques, and applied software for the numerical simulation of carrier transport and accumulation in high-speed AIIIBV (A and B refer to group III and V semiconductors, respectively) optoelectronic devices is the purpose of the paper. We propose the model based on the standard drift-diffusion equations, rate equation for photons in an injection laser, and complex analytical models of carrier mobility, generation, and recombination. To solve the basic equations of the model, we developed the explicit and implicit techniques of drift-diffusion numerical simulation and applied software. These aids are suitable for the stationary and time-domain simulation of injection lasers and photodetectors with various electrophysical, constructive, and technological parameters at different control actions. We applied the model for the simulation of the lasers with functionally integrated amplitude and frequency modulators and uni-travelling-carrier photodetectors. According to the results of non-stationary simulation, it is reasonable to optimize the parameters of the lasers-modulators and develop new construction methods aimed at the improvement of photodetectors’ response time.

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Section: Simulation Techniquesmentioning

confidence: 99%

Section: Simulation Techniquesmentioning

confidence: 99%

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Drift-Diffusion Simulation of High-Speed Optoelectronic Devices

Pisarenko

Ryndin

2019

Electronics

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“…We employ InAs QD lasers as our active components due to their high temperature stability and low threshold current density, which make it an ideal candidate for silicon photonics integrations. [23][24][25] In addition, a transfer matrix method (TMM) model is developed to simulate the optical feedback in Fabry-Pérot laser cavities and the corresponding effect on the laser characteristics.…”

Section: Methodsmentioning

confidence: 99%

Characterizations of InAs quantum dot lasers butt-joint coupled with silicon photonics waveguides

Wang

Yao

Preble

et al. 2016

Optical Interconnects XVI

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InAs quantum dot (QD) laser heterostructures are grown by molecular beam epitaxy (MBE) system on GaAs substrates and fabricated. The InAs QD lasers exhibit comparable properties of the state-of-the-art QD lasers with the threshold current density Jth and efficiency ηi of 475A/cm 2 and 72.6%, respectively, at room temperature. The quantum dot laser emission is butt-joint coupled into silicon photonics waveguides by aligning the laser and silicon photonics chips with two translation stages. Due to the optical feedback to the laser cavity at the air/Si interface, the laser power self-pulsation and reduced threshold current density are observed. And the effective facet reflectivity, Reff, of 62.7% is obtained from the theoretically analysis of the laser characteristics. Furthermore, the silicon photonics waveguides interface is coated with the SiO2/TiO2 antireflection (AR) coating layers, and no laser performance interference is observed owing the reduced optical feedback.

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“…Furthermore, in the applications of Silicon photonics integrations, it is important to have lasers that are robust against temperature variations. In this context, the InAs quantum dot (QD) lasers are attractive candidates due to their suitability for high temperature operation [6][7][8]. However, the high performance InAs QD lasers with dry etched facets have not been widely investigated [3,9].…”

Section: Introductionmentioning

confidence: 99%

InAs Quantum Dot Lasers With Dry Etched Facet by Br-Ion Beam-Assisted Etching

Yao

Lee

Guo

2016

IEEE Photon. Technol. Lett.

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The etching conditions of the AlGaAs materials in Bromine Ion Beam Assisted Etching (Br-IBAE) process has been determined. The etching rates can be varied from several nm/min to ~300 nm/min through controlling the Bromine pressure and the substrate temperature. High performance InAs quantum dot (QD) lasers have been grown by molecular beam epitaxy (MBE) system. The broad area QD lasers are fabricated by standard photolithography and metallization processes, while the laser facets are formed by Br-IBAE dry etching process. With the dryetched facets, the InAs QD lasers have a threshold current density J th , and slope efficiency, η i of 480 A/cm2 and 34%, respectively. The Br-IBAE dry etched facet reflectivity of 0.28 is obtained from fitting the J th vs. reciprocal cavity length curves.

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High performance InAs quantum dot lasers on silicon substrates by low temperature Pd-GaAs wafer bonding

Cited by 13 publications

References 35 publications

Drift-Diffusion Simulation of High-Speed Optoelectronic Devices

Drift-Diffusion Simulation of High-Speed Optoelectronic Devices

Characterizations of InAs quantum dot lasers butt-joint coupled with silicon photonics waveguides

InAs Quantum Dot Lasers With Dry Etched Facet by Br-Ion Beam-Assisted Etching

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