High performance indium-zinc-oxide thin-film transistors fabricated with a back-channel-etch-technique

Abstract

Indium-zinc-oxide thin-film transistors (TFTs) with back-channel-etch (BCE) structure were demonstrated. A stacked structure of Mo/Al/Mo was used as the source/drain electrodes and patterned by a wet-etch-method. Good etching profile with few residues on the channel was obtained. The TFT showed a field effect mobility of 11.3 cm2 V−1 s−1 and a sub-threshold swing of 0.24 V/decade. The performance of this kind of TFT was better than that of the TFT with etch-stopper-layer structure, which was proved to be due to the lower contact resistance. The BCE-TFTs fabricated with this method have good prospect due to the advantage of low cost.

Damage-Free Back Channel Wet-Etch Process in Amorphous Indium–Zinc-Oxide Thin-Film Transistors Using a Carbon-Nanofilm Barrier Layer

“…The value of contact resistance is also comparable with that of IZO-TFTs with ESL structure reported previously. 14 slope and x-intercept, respectively. Moreover, the shrinkage of the channel length L = 4.5 μm was read out, implying that effective channel length is shorter than mask channel length.…”

Solution-processed hafnium oxide dielectric thin films for thin-film transistors applications

“…The IZO TFT based on HfO x -500 exhibits the highest µ FE of 36.9 cm 2 /V·s and this value is much higher than those IZO-TFTs based on other dielectrics reported in literatures [31,32]. The high carrier mobility in the IZO TFTs based on solution-processed HfO x is due to two main reasons.…”

P-15: AZO Etch Buffer Layer based Back-Channel-Etch a-IGZO TFT Technology

“…The wet-etching can avoid such plasma bombardment induced damage; however, the oxide semiconductor like a-IGZO is very susceptible to a strong acidic or alkaline etchant [4]. Furthermore, some conductive metal oxides were generated during the wet-etching process, which reside on the back channel and are difficult to remove [5], [6], degenerating the device performance severely.…”