High-Performance Infrared Detectors Based on Black Phosphorus/Carbon Nanotube Heterojunctions

Abstract

Infrared detectors have broad application prospects in the fields of detection and communication. Using ideal materials and good device structure is crucial for achieving high-performance infrared detectors. Here, we utilized black phosphorus (BP) and single-walled carbon nanotube (SWCNT) films to construct a vertical van der Waals heterostructure, resulting in high-performance photovoltaic infrared detectors. In the device, a strong built-in electric field was formed in the heterojunction with a favored energy-band matching between the BP and the SWCNT, which caused a good photovoltaic effect. The fabricated devices exhibited a diode-like rectification behavior in the dark, which had a high rectification ratio up to a magnitude of 104 and a low ideal factor of 1.4. Under 1550 nm wavelength illumination, the 2D BP/SWCNT film photodetector demonstrated an open-circuit voltage of 0.34 V, a large external power conversion efficiency (η) of 7.5% and a high specific detectivity (D*) of 3.1 × 109 Jones. This external η was the highest among those for the photovoltaic devices fabricated with the SWCNTs or the heterostructures based on 2D materials and the obtained D* was also higher than those for most of the infrared detectors based on 2D materials or carbon materials. This work showcases the application potential of BP and SWCNTs in the detection field.

Nitrogen-Doped Graphene-Ti3C2Tx Quasi-3D Heterostructures Interfacial Interaction for High-Temperature Vibrational Piezoelectric Energy Harvesting Application

“…In detail, the strong electronegativity (δ − ) of sp2 hybridized C atoms and pyridine N atoms in NGr, as well as the strong electronegative mutual repulsion of the Ti 3 C 2 T x surface functional groups (−F, −O, −OH), prevents MXene restacking and allows rich functional groups of Ti 3 C 2 T x exhibit their high activities. 43 In contrast, the −OH functional group in the Ti 3 C 2 T x surface forms a hydrogen bond with the strongly electronegative NGr surface. Similarly, the −OH in the defects and edges of NGr will also interact with the Ti 3 C 2 T x surface functional groups −F and −O by hydrogen bonding.…”

Role of Phonon Scattering on the Transport and Performance of an N-Channel Monolayer Black Phosphorus Transistor

“…In the realm of field-effect transistors (FETs), black phosphorus has been extensively investigated in the literature [10][11][12][13][14][15][16][17][18][19][20][21][22]. Of particular significance is the pursuit of understanding the ballistic performance limits of monolayer BP FETs, which has been a focal point of studies [14,15,23,24].…”