High performance InGaZnO‐based Schottky diodes fabricated at room temperature

Yan, Linlong; Xin, Qian; Du, Lulu; Zhang, Jiaye; Luo, Yi; Song, Aimin

doi:10.1002/pssc.201510291

Cited by 14 publications

(9 citation statements)

References 19 publications

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“…Although J R decreased upon increasing R[O 2 ], J F also decreased simultaneously, and a high series resistance ( R S ) of 6038.2 Ω was obtained from the SD with an R[O 2 ] of 2%. This degradation of J F is consistent with previous reports. ,, As shown in Figure a, the carrier concentration ( N e ) of IGZO decreased from 9.1 × 10 17 to <10 15 cm –3 upon increasing R[O 2 ]. Such a decrease is generally observed in oxide semiconductors because it is considered that oxygen vacancies (V O ) form shallow donor states.…”

Section: Resultssupporting

confidence: 92%

“…Rectification Ratio (J F/R ), Schottky Barrier Height (ϕ b ), Ideality Factor (n), and Series Resistance (R S ) of IGZO SDs with IGZO at Different R[O 2 ] and T ann Values with previous reports. 20,29,30 As shown in Figure 1a, the carrier concentration (N e ) of IGZO decreased from 9.1 × 10 17 to <10 15…”

Section: Methodsmentioning

confidence: 84%

“…Thus, the properties of Schottky contacts strongly depend on the oxygen content at the metal/AOS interface . For these reasons, several approaches, including the oxygen plasma treatment of Pt and Pd surfaces before IGZO deposition, − and the partial oxidization of Ag (Ag x O) and RuSi (RuSiO) electrodes by reactive sputtering, − have been proposed to avoid the formation of surface and interface defects in IGZO. Among these materials, Ag x O is a promising material because the Ag x O/IGZO interface exhibits a large Schottky barrier height in the range of 0.9–1.1 eV. − Recently, our group has reported the mechanism of work function engineering for Ag x O .…”

Section: Introductionmentioning

confidence: 99%

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Record-High-Performance Hydrogenated In–Ga–Zn–O Flexible Schottky Diodes

Magari

Aman

Koretomo

et al. 2020

ACS Appl. Mater. Interfaces

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High-performance In–Ga–Zn–O (IGZO) Schottky diodes (SDs) were fabricated using hydrogenated IGZO (IGZO:H) at a maximum process temperature of 150 °C. IGZO:H was prepared by Ar + O2 + H2 sputtering. IGZO:H SDs on a glass substrate exhibited superior electrical properties with a very high rectification ratio of 3.8 × 1010, an extremely large Schottky barrier height of 1.17 eV, and a low ideality factor of 1.07. It was confirmed that the hydrogen incorporated during IGZO:H deposition increased the band gap energy from 3.02 eV (IGZO) to 3.29 eV (IGZO:H). Thus, it was considered that the increase in band gap energy (decrease in electron affinity) of IGZO:H contributed to the increase in the Schottky barrier height of the SDs. Angle-resolved hard X-ray photoelectron spectroscopy analysis revealed that oxygen vacancies in IGZO:H were much fewer than those in IGZO, especially in the region near the film surface. Moreover, it was found that the density of near-conduction band minimum states in IGZO:H was lower than that in IGZO. Therefore, IGZO:H played a key role in improving the Schottky interface quality, namely, the increase of Schottky barrier height, decrease of oxygen vacancies, and reduction of near-conduction band minimum states. Finally, we fabricated a flexible IGZO:H SD on a poly(ethylene naphthalate) substrate, and it exhibited record electrical properties with a rectification ratio of 1.7 × 109, Schottky barrier height of 1.12 eV, and ideality factor of 1.10. To the best of our knowledge, both the IGZO:H SDs formed on glass and poly(ethylene naphthalate) substrates achieved the best performance among the IGZO SDs reported to date. The proposed method successfully demonstrated great potential for future flexible electronic applications.

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Section: Resultssupporting

confidence: 92%

Section: Methodsmentioning

confidence: 84%

Section: Introductionmentioning

confidence: 99%

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Record-High-Performance Hydrogenated In–Ga–Zn–O Flexible Schottky Diodes

Magari

Aman

Koretomo

et al. 2020

ACS Appl. Mater. Interfaces

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“…A 100-nm-thick IGZO layer was deposited by radio-frequency (RF) magnetron sputtering at room temperature with an InGaZnO 4 ceramic target (In:Ga:Zn = 1:1:1 in atomic ratio, Lesker Co.). The RF sputtering power was 70 W 15,17,18 and the mixed gas was argon with 2.5 % oxygen. 15,17 The working pressure was 3.6 mTorr.…”

mentioning

confidence: 99%

Effects of substrate and anode metal annealing on InGaZnO Schottky diodes

Yan

et al. 2017

Applied Physics Letters

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By studying different annealing effects of substrate and anode metal, high-performance Schottky diodes based on InGaZnO (IGZO) film have been realized. It is observed that a suitable thermal annealing of the SiO 2 /Si substrate significantly improves the diode performance. In contrary, annealing of the Pd anode increases surface roughness, leading to degradation in the diode performance. As such, by only annealing the substrate but not the anode, we are able to achieve an extremely high rectification ratio of 7.2 × 10 7 , a large barrier height of 0.88 eV, and a near unity ideality factor of 1.09. The diodes exhibit the highest performance amongst IGZO-based Schottky diodes reported to date where IGZO layer is not annealed.The capacitance vs. voltage measurements indicate that the surface roughness is correlated with the trap state density at the Schottky interface.

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“…Meanwhile, the Φ B and n are slightly degraded from 0.86 eV and 2.03 to 0.67 eV and 3.84. Such performance metrics are poorer than the reports, [ 28,34,37 ] reflecting the limited defect‐suppressing effect of hydrogenation on a‐IGZO. [ 21,36 ] For 2.5‐h annealed a‐IGZO:H SBDs, the J R was significantly degraded by the heavy H doping and became highly bias‐dependent (Figure 4b).…”

Section: Resultsmentioning

confidence: 66%

Defect‐Hydrogen Interactions in Top‐Anode Oxide Semiconductor Schottky Barrier Diode

Liu

Pan

Zheng

et al. 2023

Adv Materials Technologies

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As amorphous oxide semiconductors (AOSs) are hotly pursued for advanced displays, flexible electronics, optoelectronics, and neuromorphic systems, the AOS Schottky barrier diodes (SBDs) have been tried only using the mainstream amorphous InGaZnO (a‐IGZO) and the conservative bottom‐anode structure. To deepen the study on AOS SBDs, the more challenging top‐anode SBD is developed in this work using a versatile but vulnerable AOS, amorphous InZnO (a‐IZO). Unsurprisingly, the Schottky interface defects are seriously increased by the top‐anode process and the defective a‐IZO, which cannot be effectively passivated using the incumbent oxidizing treatments. The hydrogenation is proposed to considerably suppress these annoying interface defects and thus correspondingly reduces the large leakage current, while the hydrogen doping easily deteriorates a‐IGZO SBD. The underlying mechanism of such distinction is revealed to be the tricky interactions between defect and hydrogen in AOSs. Based on the sophisticated utilization of such defect‐hydrogen interplay, the a‐IZO/a‐IGZO stack is hydrogenated together to simultaneously realize a high‐conductivity bulk and low‐defect interface, noticeably enhancing the performance metrics. Such top‐anode SBD based on hydrogenated multilayer AOSs successfully blazes a novel evolution path for AOS SBDs.

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High performance InGaZnO‐based Schottky diodes fabricated at room temperature

Cited by 14 publications

References 19 publications

Record-High-Performance Hydrogenated In–Ga–Zn–O Flexible Schottky Diodes

Record-High-Performance Hydrogenated In–Ga–Zn–O Flexible Schottky Diodes

Effects of substrate and anode metal annealing on InGaZnO Schottky diodes

Defect‐Hydrogen Interactions in Top‐Anode Oxide Semiconductor Schottky Barrier Diode

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