High-Performance InP-Based Photodetector in an Amplifier Layer Stack on Semi-Insulating Substrate

Abstract

Sieben -Xu, L.; Nikoufard, M.; Leijtens, X.J.M.; Vries, de, T.; Smalbrugge, E.; Nötzel, R.; Oei, Y.S.; Smit, M.K. Document VersionPublisher's PDF, also known as Version of Record (includes final page, issue and volume numbers)Please check the document version of this publication:• A submitted manuscript is the author's version of the article upon submission and before peer-review. There can be important differences between the submitted version and the official published version of record. People interested in the research are advised to contact the author for the final version of the publication, or visit the DOI to the publisher's website.• The final author version and the galley proof are versions of the publication after peer review.• The final published version features the final layout of the paper including the volume, issue and page numbers. Link to publication Citation for published version (APA):Xu, L., Nikoufard, M., Leijtens, X. J. M., Vries, de, T., Smalbrugge, E., Nötzel, R., ... Smit, M. K. (2008). Highperformance InP-based photodetector in an amplifier layer stack on semi-insulating substrate. IEEE Photonics Technology Letters, 20(23), 1941-1943. DOI: 10.1109/LPT.2008 General rights Copyright and moral rights for the publications made accessible in the public portal are retained by the authors and/or other copyright owners and it is a condition of accessing publications that users recognise and abide by the legal requirements associated with these rights.• Users may download and print one copy of any publication from the public portal for the purpose of private study or research.• You may not further distribute the material or use it for any profit-making activity or commercial gain • You may freely distribute the URL identifying the publication in the public portal ? Take down policyIf you believe that this document breaches copyright please contact us providing details, and we will remove access to the work immediately and investigate your claim.

Ultra-compact photonic crystal based water temperature sensor

“…The refractive indices of the InP cladding and InGaAsP [Q(1.25)] film layer are 3.17 and 3.3640, respectively, at the 1.55-µm wavelength. The refractive index of the Q(1.25) film layer is higher than that of the lower cladding and substrate layers [10,11]. Specifications of layers including the diameter (r), lattice constant (a), and refractive index (n) are depicted in Fig.…”

“…4). This scheme requires a butt-joint technology to fabricate the active and passive structures on a single chip [10,11]. …”

High-Speed Pin-Traveling Wave Photodetector Based on a Semiconductor Optical Amplifier Layer Stack on Semi-Insulating Inp Substrate

“…The optical waveguide is formed by an absorbing nonintentionally doped InGaAsP layer with a wavelength cutoff bandgap of 1.55 µm (i-Q (1.55)) surrounded by the two i-Q (1.25) layers to decrease the barrier height, to increase the optical confinement, and their bandgap is sufficiently far from the band edge of the operating wavelength at 1.55 µm. Using bulk i-Q (1.55) instead of the multi-quantum well (MQW) materials offers the advantage of the polarization independent device [7]. The three p-doped cladding layers and the two buffer layers are from InP material with a graded doping level to reduce the optical loss and to make a low resistance path for carriers.…”

“…A highly p-doped InGaAs layer with a thickness of 300 nm on top of the p-InP cladding layers is employed to form a lowresistance ohmic p-contact [13]. To achieve higher radio frequency (RF) bandwidth, a semi-insulating (SI) substrate is used to reduce the RF attenuation and the parasitic capacitance of the RF-probe and provides a good electric isolation of the components [7]. The polyimide is used to support a broader signal electrode respect to the ridge.…”

“…In Ref. [7], a Waveguide photodetector is utilized with the same absorption layer thickness and was measured an internal efficiency about 90% for 80 µm long device. So, for 200 µm long device, our calculation is correct.…”