2018
DOI: 10.1016/j.solener.2018.02.074
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High performance intermediate-band solar cells based on ZnTe:Cr with ZnO:Al electron transport layer

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Cited by 12 publications
(5 citation statements)
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“…Zinc Tellurium (ZnTe) is a crucial semiconductor in the II-VI group with a wide bandgap. It has gained significant attention in recent years for its potential applications in optoelectronic devices due to its direct band gap of approximately 2.26 eV [ [1] , [2] , [3] , [4] ]. ZnTe, with its small valence-band offset (0.05 eV) to CdTe [ 5 ], is an excellent candidate material as a back contact for CdTe-based solar cells owing to its low resistivity.…”
Section: Introductionmentioning
confidence: 99%
“…Zinc Tellurium (ZnTe) is a crucial semiconductor in the II-VI group with a wide bandgap. It has gained significant attention in recent years for its potential applications in optoelectronic devices due to its direct band gap of approximately 2.26 eV [ [1] , [2] , [3] , [4] ]. ZnTe, with its small valence-band offset (0.05 eV) to CdTe [ 5 ], is an excellent candidate material as a back contact for CdTe-based solar cells owing to its low resistivity.…”
Section: Introductionmentioning
confidence: 99%
“…On the other hand, zinc telluride (ZnTe), which is an important group II–VI compound semiconductor having a direct band gap of ∼2.26 eV, has shown immense potential in a wide range of applications in solar cells, 8 light-emitting diodes, 9 optoelectronic devices, 10 CO 2 reductions, 11 and in wastewater treatment. 12 The solution-processed ZnTe nanostructures demonstrate a few excellent features, namely, low production cost, large surface area, good environmental stability, excellent reusability and prominent visible-light absorption, which make them a prospective photocatalyst.…”
Section: Introductionmentioning
confidence: 99%
“…Potential alternatives to these toxic materials are heavy-metal free zinc chalcogenide semiconductor nanocrystals because they are environmentally benign and earth-abundant materials. [15][16][17][18][19][20] Among ZnX (X ¼ S, Se, and Te) semiconductors, ZnTe with a direct bandgap of 2.26 eV in bulk and excellent physical properties, such as ultrafast charge separation and transfer dynamics, has important applications such as in photodetectors, 21 solar cells, 22 and terahertz imaging. 23 Although bulk ZnTe materials are stable under ambient conditions, their counterparts such as ZnTe nanocrystals are extremely vulnerable to air and moisture and tend to undergo decomposition as they have a large number of surface atoms.…”
Section: Introductionmentioning
confidence: 99%