High-Performance M/LWIR Dual-Band HgCdTe/Si Focal-Plane Arrays

Vilela, M. F.; Olsson, K. R.; Norton, E. M.; Peterson, Jeffrey M.; Rybnicek, K.; Rhiger, David R.; Fulk, C.; Bangs, J. W.; Lofgreen, D. D.; Johnson, S. M.

doi:10.1007/s11664-013-2798-2

Cited by 14 publications

(5 citation statements)

References 22 publications

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“…Their applicability in a large variety of fields including thermal imaging, remote detection, astronomy and military countermeasure systems promoted the research on so called focal plane arrays (FPA). Microbolometer, HgCdTe [1,2], InSb [3] and quantum well infrared photodetector (QWIP) FPAs have already proven their performance and are well established technologies. Despite of their performance, HgCdTe detectors are highly sensitive to their material composition and material distribution.…”

Section: Introductionmentioning

confidence: 99%

43 μm quantum cascade detector in pixel configuration

Harrer¹,

Schwarz²,

Schuler³

et al. 2016

Opt. Express

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We present the design simulation and characterization of a quantum cascade detector operating at 4.3μm wavelength. Array integration and packaging processes were investigated. The device operates in the 4.3μm CO₂ absorption region and consists of 64 pixels. The detector is designed fully compatible to standard processing and material growth methods for scalability to large pixel counts. The detector design is optimized for a high device resistance at elevated temperatures. A QCD simulation model was enhanced for resistance and responsivity optimization. The substrate illuminated pixels utilize a two dimensional Au diffraction grating to couple the light to the active region. A single pixel responsivity of 16mA/W at room temperature with a specific detectivity D^* of 5⋅10⁷ cmHz/W was measured.

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Section: Introductionmentioning

confidence: 99%

43 μm quantum cascade detector in pixel configuration

Harrer¹,

Schwarz²,

Schuler³

et al. 2016

Opt. Express

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“…This technique known as micro-Laue (Ice & Pang, 2009) is implemented on the BM32 beamline of the ESRF synchrotron (Ulrich et al, 2011). It has been shown to successfully resolve localized strain fields induced by processing steps in HgCdTe photodiodes (Tuaz et al, 2017) and is here used to measure in-depth strain profiles in three typical examples of MBE-grown heterostructures: a reference single epitaxial HgCdTe layer grown on a CdZnTe substrate, the same after thermal annealing, and the quite complex case of a dual-band detector that includes a Cd-rich barrier layer (Reibel et al, 2011;Vilela et al, 2013;Destefanis et al, 2007).…”

Section: Electronic Reprintmentioning

confidence: 99%

“…HgCdTe is today the material of choice for developing very high performance infrared (IR) detectors since its Hg/Cd ratio can be used to tune the band-gap, enabling short (SWIR) to mid (MWIR) and long wave (LWIR) selective IR band detection, thus covering a vast range of applications including telecoms, space investigation and astronomy. In particular, the very low band-gap HgCdTe alloy has led to high-performance devices with increased complexity, size, resolution, and operating temperature (Rothman et al, 2009;Reibel et al, 2011;Vilela et al, 2013;Lee et al, 2016). In IR detectors, HgCdTe layers are epitaxially grown on a CdZnTe substrate and, in principle, HgCdTe may be grown on a lattice-matched CdZnTe substrate.…”

Section: Introductionmentioning

confidence: 99%

Submicronic Laue diffraction to determine in-depth strain in very closely matched complex HgCdTe/CdZnTe heterostructures with a 10⁻⁵ resolution

Biquard¹,

Ballet²,

Tuaz³

et al. 2021

J Synchrotron Radiat

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Cross-sectional submicronic Laue diffraction has been successfully applied to HgCdTe/CdZnTe heterostructures to provide accurate strain profiles from substrate to surface. Combined with chemical-sensitive techniques, this approach allows correlation of lattice-mismatch, interface compositional gradient and strain while isolating specific layer contributions which would otherwise be averaged using conventional X-ray diffraction. The submicronic spatial resolution allowed by the synchrotron white beam size is particularly suited to complex infrared detector designed structures such as dual-color detectors. The extreme strain resolution of 10−5 required for the very low lattice-mismatch system HgCdTe/CdZnTe is demonstrated.

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“…Such a structure can maximize the filling factor of two bands to improve the quantum efficiency. There are two main types Dual-band detector based on this kind of structure, one uses two back to back diodes with an contact lead out two band signals, and makes the two bands align perfectly, as shown in Figure 1 on the left, this kind of structure to ensure spatial consistency of two band, but have to operate sequentially and the temporal consistency is lost [1][2][3]. The other structure adopts a separated diode structure, and two contacts are used to elicit two band signals respectively, so that the two band pixels cannot completely align, as shown on the right in Figure 1.…”

Section: Introductionmentioning

confidence: 99%

Image fusion of spatial inconsistency IR dual-band detector

Zhao

Kong

et al. 2023

AOPC 2022: Optical Sensing, Imaging, and Display Technology

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Dual-band IR detector can obtain infrared radiation information of two bands at the same time, which has many advantages compared with single-band detector in application. At present, there are two types of dual-band detectors: one is that pixels of the two bands align perfectly, and the other is that pixels of the two bands do not align perfectly, resulting in spatial inconsistency. The spatial inconsistency dual-band detector has the advantages of perfect temporal consistency and no need for deep mesa etching, but needs more complex image fusion processing to utilize its advantages. On one hand, the difference between images of two bands contains both spatial and band differences, which makes it more difficult to accurately use band information. On the other hand, pixels of the two bands do not align perfectly, which means that higher frequency spatial information can be collected, taking advantage of these information is conducive to improving the resolution of the image. In this paper, an image fusion framework is proposed. Firstly, band differences and spatial differences are separated and reconstructed, and then the band differences are enhanced by pseudo-color fusion algorithm. Through moving a spatial consistency detector with sub-pixel displacement, we get images to verify ours fusion scheme. Experimental results show that the proposed fusion algorithm can extract and enhance the band difference information, and improve the resolution of high frequency spatial information.

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High-Performance M/LWIR Dual-Band HgCdTe/Si Focal-Plane Arrays

Cited by 14 publications

References 22 publications

43 μm quantum cascade detector in pixel configuration

43 μm quantum cascade detector in pixel configuration

Submicronic Laue diffraction to determine in-depth strain in very closely matched complex HgCdTe/CdZnTe heterostructures with a 10⁻⁵ resolution

Image fusion of spatial inconsistency IR dual-band detector

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High-Performance M/LWIR Dual-Band HgCdTe/Si Focal-Plane Arrays

Cited by 14 publications

References 22 publications

43 μm quantum cascade detector in pixel configuration

43 μm quantum cascade detector in pixel configuration

Submicronic Laue diffraction to determine in-depth strain in very closely matched complex HgCdTe/CdZnTe heterostructures with a 10−5 resolution

Image fusion of spatial inconsistency IR dual-band detector

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Product

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Submicronic Laue diffraction to determine in-depth strain in very closely matched complex HgCdTe/CdZnTe heterostructures with a 10⁻⁵ resolution