High‐Performance, Mechanically Flexible, and Vertically Integrated 3D Carbon Nanotube and InGaZnO Complementary Circuits with a Temperature Sensor

Honda, Wataru; Harada, Shingo; Ishida, Shohei; Arie, Takayuki; Akita, Seiji; Takei, Kuniharu

doi:10.1002/adma.201502116

Cited by 104 publications

(98 citation statements)

References 53 publications

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“…and dip-coating, 332,343,344 in addition to the widely used thermal evaporation with shadow masking. 172,330,331,340 Different groups have so far demonstrated the potential of integrating p-type pentacene, 172,330,331,340 poly-(9,9-dioctylfluorene-co-bithiophene) (F8T2), 341,342 and semiconducting single walled carbon nanotubes (SWCNTs) 342 The F8T2/IGZO NOT gate shows a gain G ¼ 100 V/V at a maximum supply of 30 V. 342 The same group realized also vertically stacked F8T2/IGZO NAND gates on PET.…”

Section: Materials and Fabrication Techniquesmentioning

confidence: 99%

“…272 Li et al recently demonstrated a flexible 5-stage ring oscillator based on n-type ZnO TFTs and p-type SnO x TFTs, with a maximum oscillation frequency of 18.4 kHz. 177 Recently, solution-processed semiconducting SWCNTs have also been exploited as p-type TFTs 345 and integrated into flexible complementary circuits with n-type sputtered IGZO 103,332,343,344 or spray coated In 2 O 3 TFTs. 145 Bendable hybrid SWCNT/IGZO NOT gates on PI show a maximum gain of 87 V/V, a nearly perfectly centered V M , and a "rail-to-rail" V L (Fig.…”

Section: Materials and Fabrication Techniquesmentioning

confidence: 99%

“…Based on the previously mentioned 3D vertically integrated SWCNT/IGZO TFT structure shown by Honda et al, common-source amplifiers with a gain G > 5 dB have also been fabricated. 343 …”

Section: Materials and Fabrication Techniquesmentioning

confidence: 99%

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Section: Materials and Fabrication Techniquesmentioning

confidence: 99%

Section: Materials and Fabrication Techniquesmentioning

confidence: 99%

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“…Several remarkable studies have been reported to demonstrate the feasibility of three-dimensional TFTs and ICs based on CNT and graphene. [224][225][226][227][228] It is expected that threedimensional all-carbon flexible and transparent electronics will emerge and represent an appealing direction for future research. Additionally, p-type transfer characteristics are usually shown under ambient conditions due to the adsorption of moisture and oxygen.…”

Section: Conclusion and Future Prospectsmentioning

confidence: 99%

“…It is desirable to convert major carrier types by a doping strategy to obtain n-type transfer characteristics, and further build up CMOS configuration, which is a requirement for realistic all-carbon logic circuits, because CMOS devices have the merits of a higher noise immunity and a lower static power consumption. [226,[228][229][230] All-carbon flexible and transparent TFTs will contribute not only to next-generation display applications but also to novel gas and biological sensors, optical detectors, radio-frequency identification tags and internet-of-things applications. [219,231] These new types of electronics allow integration of sensing, display, and interactive functionalities on a single chip.…”

Section: Conclusion and Future Prospectsmentioning

confidence: 99%

All‐Carbon Thin‐Film Transistors as a Step Towards Flexible and Transparent Electronics

Sun

Liu

Ren

et al. 2016

Adv Elect Materials

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silicon wafer, TFTs can be fabricated on various types of rigid or flexible substrates. [1] TFTs fabricated on glass are primarily used for driving circuits in the liquid-crystal displays of televisions, computer monitors, and mobile phones, etc. Well-established TFT technologies based on amorphous silicon and polycrystalline silicon are well-suited for large-area, highresolution panels, e.g., six pieces of 65-and 75-inch TFT arrays can be fabricated on a 10.5th generation glass substrate. [2] However, TFTs based on these silicon-based semiconductors still face challenges in flexible and transparent applications, which would allow circuit integration on curved and non-rigid surfaces and in multi-layer packaging, e.g., head-up displays on windshields, informational displays on eyeglasses and transparent electronic skin in wearable electronics. [3] In terms of the materials used to construct flexible and transparent devices, not only the transistor channel but also the dielectric layers and metallic interconnects should have excellent flexibility and transparency. [4] The following factors play critical roles in the selection of channel materials: carrier mobility, temperature of material preparation, flexibility, large area availability, cost and stability. Carrier mobility is an important parameter to characterize the drift velocity of electrons or holes in a semiconductor under an applied electric field. [5] A high mobility corresponds to a high operating speed of the TFTs and their circuits. The only advantage of low-temperature polycrystalline silicon is its relatively high mobility. [6] Amorphous oxide semiconductors, including indium gallium zinc oxide, have a modest mobility and are costly due to the use of noble metal elements. [7] Hydrogenterminated amorphous silicon has modest properties in carrier mobility, large-area and flexibility, [1] and organic semiconductors are better suited for flexible and transparent TFTs except for their shortcomings of low mobility and poor environmental stability. [8] On the other hand, normal metal electrodes, such as gold, silver, aluminum and copper, cannot be used to form transparent electrodes due to their poor light transmittance. Both transparent indium tin oxide (ITO) electrodes and opaque metal electrodes suffer from flexibility constraints and can usually tolerate strains of less than 2%. [9][10][11] Therefore, the discovery of new types of robust channel and electrode materials is essential to achieve transparent, flexible, and even stretchable electronics. [12] Carbon nanomaterials, such as carbon nanotubes (CNTs) and graphene, have attracted great attention for potential use in flexible and transparent electronics since their discovery in the last two decades, [13,14] owing to their excellent properties Carbon nanotubes and graphene have attracted great attention for potential applications in flexible and transparent electronics, owing to their exceptional properties including very high electrical conductivity, optical transmittance, mechanical strength and f...

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