The memristor is an excellent candidate for nonvolatile
memory
and neuromorphic computing. Recently, two-dimensional (2D) materials
have been developed for use in memristors with high-performance resistive
switching characteristics, such as high on/off ratios, low SET/RESET
voltages, good retention and endurance, fast switching speed, and
low power and energy consumption. Low-power memristors are highly
desired for recent fast-speed and energy-efficient artificial neuromorphic
networks. This Perspective focuses on the recent progress of low-power
memristors based on 2D materials, providing a condensed overview of
relevant developments in memristive performance, physical mechanism,
material modification, and device assembly as well as potential applications.
The detailed research status of memristors has been reviewed based
on different 2D materials from insulating hexagonal boron nitride,
semiconducting transition metal dichalcogenides, to some newly developed
2D materials. Furthermore, a brief summary introducing the perspectives
and challenges is included, with the aim of providing an insightful
guide for this research field.