High-performance metal-semiconductor-metal ZnSnO UV photodetector via controlling the nanocluster size

Huang, Chun‐Ying; Lin, Tsai-Jung; Liao, Po‐Yung

doi:10.1088/1361-6528/abb26a

Cited by 20 publications

(24 citation statements)

References 59 publications

(77 reference statements)

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“…Combined with the energy band structure analysis, since the light is incident from the CuI side, and the CuI has a remarkable ability to absorb ultraviolet irradiation, we propose that CuI plays a more important role in the conversion of optical signals. At the same time, besides the conventional conduction mechanisms, there are also several pathways for photoelectric conversion based on amorphous oxides: − (1) molecule O 2 is often adsorbed at the interface of the two materials as negatively charged O 2– . Under illumination, the photogenerated holes will neutralize the oxygen ions, and numerous free electrons will be left at the interface, resulting in a considerate photogenerated current.…”

Section: Resultsmentioning

confidence: 99%

Self-Powered Flexible Ultraviolet Photodetectors Based on CuI/a-ZTO Heterojunction Processed at Room Temperature

Liu

Zhang

Shen

et al. 2023

ACS Appl. Mater. Interfaces

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For traditional wide-bandgap semiconductor materials, a high-temperature process is unavoidable for improving crystallization quality, so the substrate of the device is greatly limited. In this work, zinc–tin oxide (a-ZTO) amorphous oxide processed by the pulsed laser deposition method was utilized as the n-type layer, which exhibits considerable electron mobility and optical transparency, and can be deposited at room temperature. At the same time, by combining p-type CuI grown by the thermal evaporation method, a vertically structured ultraviolet photodetector based on CuI/ZTO heterojunction was obtained. The detector demonstrates self-powered properties, with an on–off ratio exceeding 104, and rapid response with a rise time of 2.36 ms and a fall time of 1.49 ms. Also, the photodetector shows long-term stability with 92% retention after 5000 s cyclic lighting and maintains reproducible response in frequency dependence measurement. Furthermore, the flexible photodetector on poly(ethylene terephthalate) (PET) substrates was constructed, exhibiting fast response and durability in the bending state. This is the first time that the heterostructure based on CuI has been applied in the flexible photodetector. The excellent results indicate that the combination of amorphous oxide and CuI has the potential for ultraviolet photodetectors, and will broaden the application range of high-performance flexible/transparent optoelectronic devices in the future.

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Section: Resultsmentioning

confidence: 99%

Self-Powered Flexible Ultraviolet Photodetectors Based on CuI/a-ZTO Heterojunction Processed at Room Temperature

Liu

Zhang

Shen

et al. 2023

ACS Appl. Mater. Interfaces

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“…2e). 43 These self-formed small peaks are produced by adding acac and merge to form large protrusions when thermal stress is released. 43 Let us recall the fact that the gas response for a sensing material increases significantly as grain size decreases.…”

Section: Resultsmentioning

confidence: 99%

“…43 These self-formed small peaks are produced by adding acac and merge to form large protrusions when thermal stress is released. 43 Let us recall the fact that the gas response for a sensing material increases significantly as grain size decreases. 25 However, if large protrusions randomly grow on the surface, the device performance is not easily to be controlled.…”

Section: Resultsmentioning

confidence: 99%

Increasing the Gas Response of Ozone Sensors Based on Solution-Processed InGaZnO by Tuning the Size of the Nanostructure

Lin

Huang

2022

ECS J. Solid State Sci. Technol.

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This study uses acetylacetone (acac) as an additive to control the size of the nanostructure of solution-processed a-IGZO for ozone (O3) gas sensor applications. It is found that by adding acac, the gas response, response time, and recovery time of an IGZO gas sensor are highly improved. Under the optimal condition (4 wt%), the IGZO sensor shows a gas response of 19 and a response/recovery time of 80/120 s, against 5 ppm O3. Adding acac significantly increases the number of oxygen vacancies within an a-IGZO film so more electrons are available for reaction with the gas. The increased number of oxygen vacancies means that more dangling bonds are created, which activates the gas adsorption process. Moreover, the IGZO gas sensor has an excellent long-term stability showing negligible variation in gas response over 2 months. This method allows easy fabrication of a high-performance gas sensor that uses solution-processed a-IGZO as a sensing layer.

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“…Oxide semiconductors can be produced with various structures, such as thin films, nanoparticles [ 84 , 85 , 86 ], microspheres [ 87 ], nanomesh [ 88 ], and nanowires [ 84 , 89 ], and have appropriate photoreactivity. Therefore, they are applied in various fields, such as gas sensors [ 90 ] and light sensors [ 91 , 92 , 93 , 94 ]. In particular, The ZTO is actively used for UV sensors that require a wavelength in a range of 200 to 400 nm and energy distribution range of 3.1 to 6.2 eV.…”

Section: Zto Film and Applicationsmentioning

confidence: 99%

Zinc–Tin Oxide Film as an Earth-Abundant Material and Its Versatile Applications to Electronic and Energy Materials

Seo

Yoo

2022

Membranes

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Zinc–Tin Oxide (ZTO) films potentially offer desirable properties for next-generation devices and are considered promising candidates due to the following merits: (I) zinc and tin are abundant on Earth, with estimated reserves of approximately 250 million tons and 4.3 billion tons, respectively, (II) zinc and tin are harmless to the human body, and (III) large-area manufacturing with various synthesis processes is available. Considering the advantages and promises of these ZTO films, this review provides a timely overview of the progress and efforts in developing ZTO-based electronic and energy devices. This review revisits the ZTO films used for various device applications, including thin-film transistors, memory devices, solar cells, and sensors, focusing on their strong and weak points. This paper also discusses the opportunities and challenges for using ZTO films in further practical electronic and energy device applications.

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High-performance metal-semiconductor-metal ZnSnO UV photodetector via controlling the nanocluster size

Cited by 20 publications

References 59 publications

Self-Powered Flexible Ultraviolet Photodetectors Based on CuI/a-ZTO Heterojunction Processed at Room Temperature

Self-Powered Flexible Ultraviolet Photodetectors Based on CuI/a-ZTO Heterojunction Processed at Room Temperature

Increasing the Gas Response of Ozone Sensors Based on Solution-Processed InGaZnO by Tuning the Size of the Nanostructure

Zinc–Tin Oxide Film as an Earth-Abundant Material and Its Versatile Applications to Electronic and Energy Materials

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