The continuous growth of global data traffic over the past three
decades, along with advances in disaggregated computing architectures,
presents significant challenges for optical transceivers in
communication networks and high-performance computing systems.
Specifically, there is a growing need to significantly increase data
rates while reducing energy consumption and cost. High-performance
optical modulators based on materials such as InP, thin-film lithium
niobate (), or plasmonics have been developed,
with excelling in high-speed and
low-voltage modulation. Nonetheless, the widespread industrial
adoption of thin-film remains compounded by the rather high
cost of the underlying “on insulator”
substrates—in sharp contrast to silicon photonics, which can
benefit from strong synergies with high-volume applications in
conventional microelectronics. Here, we demonstrate an integrated
110 GHz modulator using thin-film lithium tantalate ()—a material platform that is
already commercially used for millimeter-wave filters and that can
hence build upon technological and economical synergies with existing
high-volume applications to offer scalable low-cost manufacturing. We
show that the photonic integrated circuit based
modulator can support 176 GBd PAM8 transmission at net data
rates exceeding 400 LiNbO3. Moreover, we show that using silver
electrodes can reduce microwave losses compared to previously employed
gold electrodes. Our demonstration positions the modulator as a novel and highly
promising integration platform for next-generation high-speed,
energy-efficient, and cost-effective transceivers.